DSA00507003.pdf by Renesas Technology

Partial File Text 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 (Previous ADE-208-602) Rev.2.00 Aug.10.2005 Features · Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz)
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3SK319 3SK319YB-TL-E ADE-208-602