DSAH00422551.pdf by Panasonic

Partial File Text IGBTs 2PG301 2PG301 Insulated Gate Bipolar Transistor s Features q q q Unit : mm 8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1 High breakdown voltage : VCES= 400V Large current control possible : IC(pe
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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