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    DSAZIHA1000111395.pdf by International Rectifier

    • IRF8788PbF-1 HEXFET® Power MOSFET VDS 30 RDS(on) max V RDS(on) max 44 (@TA = 25°C) nC 24 Qg (typical) ID A 2 7 D 3 6 D G 3.8 (@VGS = 4.5V)
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