DSA00763536.pdf

Manufacturer Toshiba
Partial File Text MICROWAVE POWER GaN HEMT MICROWAVE SEMICONDUCTOR TGI7785-120L TECHNICAL DATA FEATURES HIGH POWER Pout=51.0dBm at Pin=44.0dBm HIGH GAIN GL=11.0dB at Pin=20.0dBm BROAD BAND INTERNALLY MATCHED
Type Original
ECAD Model
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DSA00763536.pdf preview Download Datasheet