DSAH00487538.pdf
- PanJit International
- PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES · RDS(ON), VGS@10V,IDS@3.2A=65m · RDS(ON), VGS@4.5V,IDS@2.8A=85m · Advanced Trench Process Technology · High Density Cell Desig
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