DSA2IH00166030.pdf

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Partial File Text TIP110/111/112 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE =1000 @ V ce = 4V, I c =1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN
Type Scan
ECAD Model
Alternative Parts
TIP110 TIP110 TIP110 TIP110 TIP110

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