DSA00481153.pdf
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IXYS
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DE150-102N02A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
VDSS
Test Conditions
VDSS
TJ = 25°C to 150°C
1000
VDGR
TJ = 25°C to 150
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Original
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