"CONTENT ADDRESSABLE MEMORY" PRECHARGE CONTROL Search Results

ternary content addressable memory VHDL

Abstract: ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge
Contextual Info: V S MSUNG STDL150 ELECTRONICS STDL150 Standard Cell 0.13um System-On-Chip ASIC March 2003, V2.0 Features Analog cores - Ldrawn = 0.13um 1.5/2.5/3.3V Device 1.5/2.5/3.3V - Up to 45.8 million gates Interface - Power dissipation: 13nW/MHz@1.5V, 2SL, ND2 5.0V

ARM9TDMI

Abstract: ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung
Contextual Info: V S MSUNG STDH150 ELECTRONICS STDH150 Standard Cell 0.13um System-On-Chip ASIC Dec 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 34.3 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2

ARM dual port SRAM compiler

Abstract: DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ
Contextual Info: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2

ARM1020E

Abstract: samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T
Contextual Info: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2

ARM dual port SRAM compiler

Abstract: rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110
Contextual Info: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device

DSPG

Abstract: Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler
Contextual Info: V S MSUNG STD131 ELECTRONICS STD131 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device

PPC823

Abstract: PPC8260 MT4632M16 MGT5100 MT48LC16M16A2 MT46V16M8 MT46V32M8 MT46V64M8 MT48LC16M16 sdr sdram reference
Contextual Info: Application Note AN2248/D Rev. 0, 01/2002 Using the MGT5100 SDRAM Controller by Mark Jonas and Davide Santo Driver Information Systems Munich, Germany Introduction Synchronous Dynamic RAM SDRAM and Double Data Rate Synchronous Dynamic RAM (DDR-SDRAM or simply DDR) are among today’s preferred

PPC823

Abstract: MGT5100 MT48LC16M16A2 AN2248 0X0054 MT48LC32M16A2 PPC8260 MT46V64M8 equivalent MT48LC2M32B2 MT46V32M16
Contextual Info: Application Note AN2248/D Rev. 1, 02/2002 Using the MGT5100 SDRAM Controller by Mark Jonas and Davide Santo Driver Information Systems Munich, Germany Introduction Synchronous Dynamic RAM SDRAM and Double Data Rate Synchronous Dynamic RAM (DDR-SDRAM or simply DDR) are among today’s preferred memories where

d4564163-a80

Abstract: NEC D4564163-A80 d4564163 sdram controller MT48LC4M32B2-7 d456 MT48LC4M32B2 SDR100 MT48LC2M32B2 EP2S60F672C5
Contextual Info: 1. SDRAM Controller Core NII51005-7.1.0 Core Overview The SDRAM controller core with Avalon interface provides an Avalon Memory-Mapped Avalon-MM interface to off-chip SDRAM. The SDRAM controller allows designers to create custom systems in an Altera® FPGA that connect easily to SDRAM chips. The SDRAM

sdram controller

Abstract: ADSP-TS201 reference manual MT48LC4M32B2 bf533 defbf533 sdram full example c code ADSP-BF533 ADSP-TS201 datasheet sdram 1024 x 4 x 32 ADSP-TS203 ADSP-21065L
Contextual Info: Engineer-to-Engineer Note a EE-210 Technical notes on using Analog Devices DSPs, processors and development tools Contact our technical support at dsp.support@analog.com and at dsptools.support@analog.com Or visit our on-line resources http://www.analog.com/ee-notes and http://www.analog.com/processors

TCMS

Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
Contextual Info: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

TCMS

Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
Contextual Info: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION

ADSP-BF533 Blackfin Processor Hardware Reference

Abstract: ADSP-21161N ADSP-BF531 ADSP-BF533 ADSP-TS101S ADSP-TS201S ADSP-TS203S BF533 EE-210 sdram full example c code
Contextual Info: Engineer To Engineer Note a EE-210 Technical Notes on using Analog Devices' DSP components and development tools Contact our technical support by phone: 800 ANALOG-D or e-mail: dsp.support@analog.com Or visit our on-line resources http://www.analog.com/dsp and http://www.analog.com/dsp/EZAnswers

SH7709S

Abstract: 7709S Hitachi Capacitor Guide PD45128163G5-A10-9JF SH7622 SH7706 SH7709 SH7709A SH7727 SH7729
Contextual Info: HITACHI EUROPE LTD. Version: App 128/1.0 APPLICATION NOTE SH3 -DSP Interface to SDRAM Introduction This application note has been written to aid designers connecting Synchronous Dynamic Random Access Memory (SDRAM) to the Bus State Controller (BSC) of SH7622 (SH2-DSP)

Contextual Info: Version 2.0 ATP Industrial Grade SlimSATA Embedded Module Specification ATP Industrial Grade SlimSATA Embedded Module Version 2.0 Your Ultimate Memory Solution! 1 ATP Confidential &Proprietary Version 2.0 ATP Industrial Grade SlimSATA Embedded Module Specification

Jedec JESD209

Abstract: DMC TOOL AMBA AXI dma controller designer user guide DMC-340 PL301 ADR-301 ddr phy trustzone DMC-340 Supplement to AMBA Designer arlen
Contextual Info: AMBA DDR, LPDDR, and SDR Dynamic Memory Controller DMC-340 Revision: r4p0 Technical Reference Manual Copyright 2004-2007, 2009 ARM Limited. All rights reserved. ARM DDI 0331G ID111809 AMBA DDR, LPDDR, and SDR Dynamic Memory Controller DMC-340 Technical Reference Manual

"content addressable memory" precharge sense amplifier

Abstract: "content addressable memory" precharge sense BQ29312APW BQ29312APWG4 BQ29312ARTHR BQ29312ARTHRG4
Contextual Info: PW RTH bq29312A www.ti.com SLUS629A – JANUARY 2005 – REVISED AUGUST 2005 TWO-CELL, THREE-CELL, AND FOUR-CELL LITHIUM-ION OR LITHIUM-POLYMER BATTERY PROTECTION AFE FEATURES APPLICATIONS • • • • • • • • • • • • • • • 2-, 3-, or 4-Cell Series Protection Control

"content addressable memory" precharge sense amplifier voltage control

Abstract: BQ29312APW
Contextual Info: PW RTH bq29312A www.ti.com SLUS629A – JANUARY 2005 – REVISED AUGUST 2005 TWO-CELL, THREE-CELL, AND FOUR-CELL LITHIUM-ION OR LITHIUM-POLYMER BATTERY PROTECTION AFE FEATURES APPLICATIONS • • • • • • • • • • • • • • • 2-, 3-, or 4-Cell Series Protection Control

Contextual Info: PW RTH bq29312A www.ti.com SLUS629A – JANUARY 2005 – REVISED AUGUST 2005 TWO-CELL, THREE-CELL, AND FOUR-CELL LITHIUM-ION OR LITHIUM-POLYMER BATTERY PROTECTION AFE FEATURES APPLICATIONS • • • • • • • • • • • • • • • 2-, 3-, or 4-Cell Series Protection Control

BQ29312APW

Abstract: bq2084 bq29312 bq29312A bq29312APWR bq29312APWR-SA bq29312ARTH bq29312ARTHR
Contextual Info: PW RTH bq29312A www.ti.com SLUS629A – JANUARY 2005 – REVISED AUGUST 2005 TWO-CELL, THREE-CELL, AND FOUR-CELL LITHIUM-ION OR LITHIUM-POLYMER BATTERY PROTECTION AFE FEATURES APPLICATIONS • • • • • • • • • • • • • • • 2-, 3-, or 4-Cell Series Protection Control

BQ29312APW

Abstract: bq29312ARTHR dc impedance lithium-ion polymer battery SBS 15 battery bq29312APWR bq29312APWR-SA bq29312ARTH bq2084 bq29312 bq29312A
Contextual Info: PW RTH bq29312A www.ti.com SLUS629A – JANUARY 2005 – REVISED AUGUST 2005 TWO-CELL, THREE-CELL, AND FOUR-CELL LITHIUM-ION OR LITHIUM-POLYMER BATTERY PROTECTION AFE FEATURES APPLICATIONS • • • • • • • • • • • • • • • 2-, 3-, or 4-Cell Series Protection Control

BQ29312APW

Contextual Info: PW RTH bq29312A www.ti.com SLUS629A – JANUARY 2005 – REVISED AUGUST 2005 TWO-CELL, THREE-CELL, AND FOUR-CELL LITHIUM-ION OR LITHIUM-POLYMER BATTERY PROTECTION AFE FEATURES APPLICATIONS • • • • • • • • • • • • • • • 2-, 3-, or 4-Cell Series Protection Control

0-450V

Abstract: fet K 793 BQ29312APW
Contextual Info: PW RTH bq29312A www.ti.com SLUS629A – JANUARY 2005 – REVISED AUGUST 2005 TWO-CELL, THREE-CELL, AND FOUR-CELL LITHIUM-ION OR LITHIUM-POLYMER BATTERY PROTECTION AFE FEATURES APPLICATIONS • • • • • • • • • • • • • • • 2-, 3-, or 4-Cell Series Protection Control

SSDSA2MH160G2

Abstract: SSDSA1MH080G201 SSDSA2MH080G2 SSDSA1MH160G201 SSDSA1MH160G2 SSDSA1MH080G2 block diagram for mini SATA SSD SFF-8144 intel ssd intel nand flash
Contextual Info: Intel X18-M/X25-M SATA Solid State Drive 34 nm Product Line SSDSA1MH080G2, SSDSA2MH080G2, SSDSA1MH160G2, SSDSA2MH160G2 Product Manual „ „ „ „ „ „ „ „ Available in 1.8” and 2.5” Form Factors Capacity: 80 GB and 160 GB Uses Intel NAND flash memory Multi-Level Cell