TCMS Search Results

TA-016TCMS680M-ER

Abstract: TA-010TCMS330M-B2R TA-025TCMS100M-C1R ta-6r3tcm220 TA-6R3TCMS330M-AR ta-010tcms220m-c1r EIA-535-BAAC TA010TCM1R5M 6R3TCMS470M TA-020TCMS3R3M-B2R
Contextual Info: TANTALUM CAPACITOR TCM Family TCM Series: Standard Capacitance TCMS Series: Extended Capacitance Application: Mobile Telecom Applications, Camcorder, Digital Still Camera, LCD TV, HICs and all kind of devices that require miniaturization and surface mouting.

ta-6r3tcm220

Abstract: ta016tcms470 EIA-535-BAAC TA-020TCMS2R2 TA-010TCMS150 JIS-C-5143 TA-025TCM3R3 ERL 35 TA-010TCMS100 TA-016TCMS2R2
Contextual Info: TANTALUM CAPACITOR TCM Family TCM Series: Standard Capacitance TCMS Series: Extended Capacitance TCML Series: Low Profile Application: Mobile Telecom Applications, Camcorder, Digital Still Camera, LCD TV, HICs and all kind of devices that require miniaturization

v684

Abstract: TA-025TCMS2R2M-AR TA-6R3TCMS470M TA-016TCMS4R7M-AR a475 TA-010TCMS4R7M-AR TA-016TCMS680M-ER diode v684 MARKING B2R TA-020TCMS3R3M-B2R
Contextual Info: FUJITSU MEDIA DEVICES DATA SHEET DS01-41104-1E TANTALUM CAPACITORS TANTALUM CAPACITORS TCMS Series • DESCRIPTION Miniaturization of electronic devices communication devices, audio devices, and AV devices, etc. has more and more accelerated in recent years. The models downsized into one half to one fifth of conventional TCM series

v684

Abstract: TA016TCMS ta016tcms470 TA025TCMS TA-6R3TCMS6R8M TA-010TCMS100M
Contextual Info: FUJITSU MEDIA DEVICES DATA SHEET DS01-41104-1E TANTALUM CAPACITORS TANTALUM CAPACITORS TCMS Series • DESCRIPTION Miniaturization of electronic devices communication devices, audio devices, and AV devices, etc. has more and more accelerated in recent years. The models downsized into one half to one fifth of conventional TCM series

TA-010TCMS100

Abstract: TA-010TCMS220 JIS-C-5143 TA025TCMS EIA-535BAAC TA-035TCM TA-016TCM220
Contextual Info: TANTALUM CAPACITOR TCM Family TCM Series: Standard Capacitance TCMS Series: Extended Capacitance TCML Series: Low Profile Application: Mobile Telecom Applications, Camcorder, Digital Still Camera, LCD TV, HICs and all kind of devices that require miniaturization

r2a3

Abstract: r1a10 M1367 M4589
Contextual Info: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.

2269H

Contextual Info: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

TCK-1000

Abstract: D038 toshiba M7
Contextual Info: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

TH4B

Contextual Info: PHAST-3N STM-1/STS-3/STS-3c SDH/SONET Overhead Terminator with Telecom Bus Interface TXC-06103 DATA SHEET • • • • • • • • • • • • • • • • • Bit-serial SDH/SONET line interface - Pseudo-ECL interface with clock recovery and synthesis

45VM32160D

Contextual Info: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

CMS3216LAF

Abstract: CMS3216LAG CMS3216LAH
Contextual Info: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions

Contextual Info: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

W9825G6JH

Abstract: A-04 w9825g6jh-6l w9825g6jh-6
Contextual Info: W9825G6JH 4 M  4 BANKS  16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

AS4SD32M16

Contextual Info: SDRAM AS4SD32M16 512Mb: 32 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive

Contextual Info: SDRAM AS4SD8M16 128 Mb: 8 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • • • • • • • • • • • • • • Full Military temp (-55°C to 125°C) processing available Copper lead frame option for enhanced reliability

cdb 4121 e

Abstract: cdb 4121 ARMv7 Cortex-m1 verilog code AHB cortex
Contextual Info: Cortex-M1 v3.1 Handbook 2010 Actel Corporation. All rights reserved. Printed in the United States of America Part Number: 50200127-12 Release: September 2010 No part of this document may be copied or reproduced in any form or by any means without prior written consent of

IS42S32400D

Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
Contextual Info: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed

dynamic ram binary cell

Abstract: QBA-1 qab1
Contextual Info: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

SpecTek

Abstract: S16008 IDD8 S80016LK7TW-8A 54-PIN S16008LK9 S40032LK8 S80016LK7 54pin TSOP SDRAM MA3232
Contextual Info: 128Mb: x4, x8, x16 SDRAM 3.3V ICC OPERATING CONDITIONS AND MAXIMUM LIMITS: Vdd = 3.3V ± 10%V, Temp. = 25° to 70 °C Supply Current OPERATING CURRENT: ACTIVE mode, burst = 1, READ or WRITE, tRC > tRC MIN , one bank active, CL=3 STANDBY CURRENT: POWER-DOWN mode, CKE = LOW,

IS42S16160D

Abstract: IS42S16160D-7TLI
Contextual Info: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

ARMv5TE

Abstract: ARM968E-S LPC2923 LQFP100
Contextual Info: LPC2921/2923/2925 ARM9 microcontroller with CAN, LIN, and USB Rev. 01 — 15 June 2009 Preliminary data sheet 1. General description The LPC2921/2923/2925 combine an ARM968E-S CPU core with two integrated TCM blocks operating at frequencies of up to 125 MHz, Full-speed USB 2.0 device controller,

MT48LC4M32B2P

Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
Contextual Info: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive

MT48LC2M32B2P

Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
Contextual Info: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock

mt48lc32m16a2p-75

Abstract: MT48LC32M16A2P-75C 1m x16 SDRAM MICRON A11 MARKING CODE MT48LC32M16A2P MT48LC128M4A2 MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2P-75 c
Contextual Info: 512Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Options • PC100- and PC133-compliant