"DUAL TRANSISTORS" RESISTANCE Search Results

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

transistors BC 543

Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD2H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION The UTC UD2H are Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate interference.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.

MFE3020

Abstract: MFE3021
Contextual Info: MFE3020 silicon MFE3021 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS (Type C) Enhancement Mode (Type C| MOS Field-Effect Transistors de­ signed primarily for low power, chopper or switching applications. Low Reverse Gate Current —

MD3762

Abstract: MD3762F MQ3762 rfl3
Contextual Info: MD3762 silicon MD3762F MQ3762 PNP SILICON DUAL TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, and temperature compensation amplifiers. • Collector-Emitter Breakdown Voltage —

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

16pin pwm

Abstract: TB6561NG SDIP-24-300-1
Contextual Info: TB6561NG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561NG Dual Full-Bridge Driver IC The TB6561NG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current

TB6561NG

Contextual Info: TB6561NG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561NG Dual Full-Bridge Driver IC The TB6561NG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current

TB6561FG

Contextual Info: TB6561FG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561FG Dual Full-Bridge Driver IC TB6561FG The TB6561FG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current

TB-6561

Abstract: TB6561N SDIP-24-300-1
Contextual Info: TB6561N Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561N Dual Full-Bridge Driver IC The TB6561N is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current

TB6561NG

Contextual Info: TB6561NG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561NG Dual Full-Bridge Driver IC for DC Motors The TB6561NG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current

MPQ2369

Abstract: MHQ2369 MHQ2906 2N2483 2N2484 MPQ2483 MPQ2484 MPQ2906 MPQ2907
Contextual Info: MPQ2369 SILICON MPQ2483 MPQ2484 For Specifìcations, See MHQ2369 Data. (SILICON) QUAD DUAL IN-LINE NPN SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, high-gain amplifier applications.

Contextual Info: TB6561N/NG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561N/NG Dual Full-Bridge Driver IC The TB6561N/NG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current

TB6561FG

Contextual Info: TB6561FG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561FG Dual Full-Bridge Driver IC for DC Motors TB6561FG The TB6561FG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current

Contextual Info: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.

Contextual Info: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.

TS 4140

Abstract: 2N2369ADCSM
Contextual Info: DUAL NPN SWITCHING TRANSISTORS 2N2369ADCSM • Dual Silicon Planer Epitaxial NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: DUAL NPN SWITCHING TRANSISTORS 2N2369ADCSM • Dual Silicon Planer Epitaxial NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

sot553

Abstract: EMG5
Contextual Info: EMG2DXV5T1, EMG5DXV5T1 Preferred Devices Product Preview Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single

EMG5

Contextual Info: EMG2DXV5T1, EMG5DXV5T1 Preferred Devices Product Preview Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single

2N3904DCSM

Abstract: 2N3904D dual npn 500ma LE17
Contextual Info: SILICON EPITAXIAL DUAL NPN TRANSISTORS 2N3904DCSM • Dual Silicon Planar NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Designed For General Purpose and Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: IMH23 Transistors Dual digital transistors IMH23 External dimensions Unit : mm Features In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits.

Contextual Info: IMD16A Transistors Power management dual digital transistors IMD16A zDimensions (Unit : mm) zFeatures 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. (4) (5)