2N2483 Search Results

2N2484 motorola

Abstract: MP024 2N2483 2N2484 MPQ2483 MPQ2484 MP02483
Contextual Info: QUAD DUAL IN-LINE NPN SILICON MATCHED AMPLIFIER TRANSISTORS . designed for low-level, high-gain amplifier applications. @ Low Noise Figure – @ Ic = 10pAdc NE = 3.0 dB Typ – MPQ2483 = 2.0 dB (Typ) – MPQ2484 @ Transistor Similar @ Compact Size to 2N2483

2N2483

Abstract: 2N2484 2N2586 2N2897 2N3117 2N3647 2N3700 2N6430 2N706 2N706A
Contextual Info: Maximum Ratings Type No. 2N2483 VC0O V Min ^CEO ^EBO (V) Min (V) Min 60 60 6 Po (W) Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (A) ^CM 'cBO ^C B (A) (PA) Max e (V) 0.01 45 Tc=25°c 0.36 0.05 ^CES ^CE "re @ 'c & (mA) (MA) 0 (V) Max

Contextual Info: LIE » N AUER PHILIPS/DISCRETE • bbS3^3i □□eaioi Tb7 l IAPX 2N2483 2N2484 SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These transistors are primarily intended for use in high performance, low-level, low-noise amplifier

Contextual Info: ^ctdxy isStmi-Conchctoi ZPiotLata., Una. TELEPHONE: 873 376-2882 (212) 227-6008 FAX! (973) 378 0960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA 2N2483 NPN SILICON TRANSISTOR MECHANICAL DATA CASE: TERMINAL CONNECTIONS: JFflFC TO-1H Icnrt 1 Fmittnr l.o.irt 2 Unso

2n2771

Abstract: 2N2483
Contextual Info: Search Results Part number search for devices beginning "2N2483" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N2483 NPN TO18 60V 0.05A 80 - 5/1m - 0.36W

Contextual Info: 2N2483-JQR-B Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products

2N2484

Abstract: 2N2483 2N930 DN2484
Contextual Info: TRANSISTOR CHIPS 3 HIGH GAIN - SMALL SIGNAL NPN £ IC - 10/iA 2N2483 40120 X 100% Probe Tested to These Parameters @ 25°C h FE @Vc e = 5 V V cB O V o lts M in. e ic = @lc 100i m a e ic = 1m A 75 Min 175 Min , 10^ A l E =0 60 v ceo V o lts M in. @'c = 10m A

Contextual Info: 2N2483-JQR-B Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products

Contextual Info: 2N2483 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products

2N2483

Abstract: 60N60
Contextual Info: 2N2483 Chip: geometry 0307; polarity NPN 33.72 Transistors Transistor. 1 of 2 Home Part Number: 2N2483 Online Store 2N2483 Diodes C hip: geo m et ry 0 3 0 7 ; po larit y NPN Transistors Enter code INTER3 at

replacement BC107

Abstract: 2N4124 bc548 BC109C replacement bcy71 replacement 2n3053 replacement 2n2222a REPLACEMENT 2N4126 bc548 2n3019 equivalent BC109C datasheet 2n4125 equivalent
Contextual Info: Philips Semiconductors Replacement list Selection guide REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REASON FOR DELETION 2N2297 Replaced by 2N3019 2N2483

2N2483

Abstract: 2N2484 4501 ic
Contextual Info: II N AHER PHILIPS/DISCRETE blE D • bb53^31 0020101 Tb7 2N2483 2N2484 I SILICON PLANAR TRANSISTORS N-P-N transistors in TO -18 m etal envelopes w ith th e c o lle c to r connected to th e case. These transistors are p rim a rily intended fo r use in high perform ance, low -level, low-noise a m p lifie r

BCW91B

Abstract: 2N3077 BFR40 2SC1211 2N3895A MMST8098 KT503G 2N2489A LOW-POWER SILICON NPN 2N736
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 SO 65 70 75 80 85 90 95 726 V BR CEO hFE (V) V(BR)CEO 5 Manufacturer BFT30 MPS651 2N910 2N2522 2N760B 2N1566 2N736 MM2483 2N2483 2N3077 fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CBO (V)

mps6514 replacement

Abstract: replacement BC107 bsx45 replacement BC109C replacement 2n2222a REPLACEMENT pxt2907 smd replacement of 2N3053 2n2905A replacement 2n2222a smd P2T2907
Contextual Info: Philips Semiconductors Replacement list Selection guide REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REASON FOR DELETION 2N2297 Replaced by 2N3019 2N2483

2N2483

Abstract: 2N2484 gi06
Contextual Info: 2N2483 2N2484 SILICON PLANAR NPN LOW -LEVEL, LOW-NOISE AM PLIFIERS The 2N 2483 and 2N 2484 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case. They are designed fo r use in high-perform ance, low -noise am plifier circuits from audio

2N2483

Contextual Info: 2N2483 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products

Contextual Info: TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25*C, Unless Otherwise Specified) Maximum Ratings Type No. 2N2483 V CBO ^CEO V EBO M Min (V) Min IV) Min 60 60 6 Pc (W) 'c (A) ^CM 'cao (A) (pA) ^C6 (V) 0.36 0.05 0.01 ^CE e (V) Max

2N2483

Contextual Info: 2N2483 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products

2n2483

Abstract: 2N2484
Contextual Info: TYPES 2N2483, 2N2484 N-P-N SILICON TRANSISTORS B U L L E T IN NO. DL-S 6 7 1 0 3 0 0 , S E P T E M B E R 1 9 6 7 FOR LOW-LEVEL, LOW-NOISE, HIGH-GAIN, AMPLIFIER APPLICATIONS • Guaranteed Low-Noise Characteristics at 100 Hz, 1 kHz, and 10 kHz • High V n CEo . . . 60 V Min

2N2483

Abstract: 2N2484 J 2N2484 2N2484 manufacturer FT1215
Contextual Info: - _ PHILIPS In t e r n a t i o n a : 2N2483 2N2484 H SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. These transistors are prim arily intended fo r use in high performance, low-level, low-noise am plifier

8VC80

Contextual Info: D fV C f TYPF PACKAGE BVCEO 8VC8 0 BVEBO ICBO Q VCB { V I M IN V M IN IV ) M IN Im A I M AX |V ) 2N2475 2N2476 2N2477 2N2481 2N2483 NPN NPN NPN NPN NPN T O -18 TO -5 TO -5 T O -18 T O -18 6 20 20 15 60 15 60 60 40 60 4 5 5 5 6 50 200 200 50 10 2N2484 2N2501

f-30MHz

Abstract: 2N2483 2N2484
Contextual Info: H o TRANSISTOR CHIPS HIGH GAIN - SMALL SIGNAL NPN n oo \ / 100% Probe Tested to These Parameters @ 25°C h FE @VCe = 5V 2N2483 @IC= 10fiA @lc= 100mA @lc = 1mA 40120 75 Min 175 Min VcBO . V CEO Volts Mm;- Volts Min. @lc = @IC= 10mA 10mA •e =0 60 iB=o 60 /

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma