"POWER DIODE" 25A 800V Search Results

Contextual Info: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for

BYP54-800

Abstract: BYP53-800 BYP53 BYP53-75 BYP54 hermetic press-fit diode zetex MARKING CODE
Contextual Info: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for

Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr IXFB50N80Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXFB50N80Q2

Abstract: 50n80 DS99005D 50N80Q2
Contextual Info: IXFB50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFN50N80Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings

IXFN50N80Q2

Abstract: 50N80Q2
Contextual Info: IXFN50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings

sml8030jvr

Abstract: sm 170 380
Contextual Info: Illl Vrr r = mi SEM E SML8030JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 800V 25A 0.300Q Faster Switching

Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT8030JVFR 800V ' POWER MOS V 25A 0.300Í2 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT8030JVR A dvanced P o w er Te c h n o l o g y 800V 25A 0.300Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: A dvanced P ow er Te c h n o lo g y APT8030JVR 800V ' 25A 0.300Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V'“

KK25GB40

Abstract: KK25GB80 PD25GB40 PD25GB80 PE25GB40 PK25GB PK25GB40 PK25GB80
Contextual Info: THYRISTOR MODULE PK PD,PE,KK 25GB UL;E76102 M Power Thyristor/Diode Module PK25GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 800V are available. and electrically isolated mounting base make

Contextual Info: APT8030JVFR A dvanced P o w er Te c h n o l o g y 800V POWER MOSV 25A 0.300Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

K25N120

Abstract: SKW25N120 smps 300W PG-TO-247-3 k25N12
Contextual Info: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter G - SMPS • NPT-Technology offers:

k25t120

Abstract: ikw25t120 BUP314D 25A 1200V BUP314 1200v 25A to247 PG-TO-247-3 K25-T
Contextual Info: IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D

k25t120

Contextual Info: IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D

K25N120

Abstract: Q67040-S4282
Contextual Info: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter G - SMPS • NPT-Technology offers:

k25t120

Abstract: 1200V BUP314D equivalent
Contextual Info: IKW25T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D

IXFB50N80Q2

Abstract: 50n80 50N80Q2
Contextual Info: HiPerFETTM Power MOSFETs IXFB50N80Q2 VDSS = ID25 = RDS on = ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 800V 50A Ω 0.15Ω 300ns PLUS264TM(IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

k25t120

Contextual Info: IKW25T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D

Contextual Info: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

035H

Abstract: IRGP30B120KD-E IRGP30B120KD-EP
Contextual Info: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

IRGP30B120KD-EP

Abstract: ir igbt 1200V 40A 035H IRGP30B120KD-E
Contextual Info: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

rs 301-678

Abstract: 1200V 100 A THYRISTOR mkp 10 500v 3 phase thyristor dc drive thyristor 1200v DIODE 0536 phase angle control circuit 2500V. 300A. diodes thyristor controller phase angle trigger module 301-678
Contextual Info: Issued March 1991 J6575 Encapsulatedthyristor anddiodepacks A range of encapsulated modules, either thyristor or diode, available in two voltage ratings 800VRRM and 1200V RRM for 250 Vrms and 440 Vrms respectively. The thyristor module is available in five current

Contextual Info: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)