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    IXYS Corporation IXFB50N80Q2

    MOSFET N-CH 800V 50A PLUS264
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    IXFB50N80Q2 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFB 50N80Q2 IXYS TRANS MOSFET N-CH 800V 50A 3PLUS 264 Original PDF
    IXFB50N80Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFB50N80Q2 IXYS HiPerFET Power MOSFET Original PDF

    IXFB50N80Q2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr IXFB50N80Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFB50N80Q2 300ns PLUS264 50N80Q2 1-18-10-C

    IXFB50N80Q2

    Abstract: 50n80 50N80Q2
    Text: HiPerFETTM Power MOSFETs IXFB50N80Q2 VDSS = ID25 = RDS on = ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 800V 50A Ω 0.15Ω 300ns PLUS264TM(IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFB50N80Q2 300ns PLUS264TM 50N80Q2 0-11-07-A IXFB50N80Q2 50n80

    IXFB50N80Q2

    Abstract: 50n80 DS99005D 50N80Q2
    Text: IXFB50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFB50N80Q2 300ns PLUS264 -55es 50N80Q2 1-18-10-C IXFB50N80Q2 50n80 DS99005D

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    50n80

    Abstract: 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 50N80Q2 264TM 728B1 50n80 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q

    IXFB

    Abstract: 50N80Q2 IXFB50N80Q2 50n80
    Text: HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 50N80Q2 264TM IXFB 50N80Q2 IXFB50N80Q2 50n80

    50N80Q2

    Abstract: IXFB50N80Q2 264TM
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 50N80Q2 264TM 150imited 728B1 50N80Q2 IXFB50N80Q2 264TM

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original     		PDF IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 50N80Q2 264TM 728B1