.WY TRANSISTOR Search Results

Contextual Info: STWD100 Watchdog timer circuit Datasheet - production data Applications • Telecommunications  Alarm systems  Industrial equipment  Networking SOT23-5 WY  Medical equipment SC70-5, SOT323-5 (W8)  UPS (uninterruptible power supply) Features

vp1210n5

Contextual Info: VP12A fài Super te x inc. /p v P-Channel Enhancement-Mode Wy Vertical DMOS FETs Ordering Information Standard Commercial Devices I d ON (max) (min) TO-39 BVdgs t Order Number / Package ^ D S (O N ) DICEt -40V 0 .8 0 -6A VP1204N2 VP1204N5 VP1204ND -60V 0 .8 0

WY transistor

Abstract: sot23 WY transistor marking WY .wy transistor WG SOT 23 KTC3876 marking wo sot-23 TRANSISTOR MARKING CODE WO MARKING WY transistor wy
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1505. z Excellent HFE Linearity. z Low noise. KTC3876 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23

Omron H5BR

Abstract: tranzystor BD 283 omron h5br-b H5BR-B H5BR
Contextual Info: Wielofunkcyjny cyfrowy przekaŸnik czasowy H5BR £atwy w obs³udze cyfrowy przekaŸnik czasowy z funkcj¹ zliczania czasu w obudowie DIN 72 x 72 mm • 9 ró¿nych trybów pracy ■ Nastawa wszystkich parametrów w menu na panelu czo³owym. ■ Zakresy czasowe od 0.001 sek do 9999 h.

H7CR-B-500

Abstract: P3GA-08 H5CR-B H7CR-B H5CR-S pods H5CR P2CF-08 Y92A-48 Y92A-48F1
Contextual Info: H5CR Cyfrowy przekaŸnik czasowy Wielofunkcyjny przekaŸnik czasowy 1/16 DIN z funkcjami ³atwymi w u¿yciu Dziewiêæ trybów pracy wyjœæ umo¿liwia zastosowanie w ró¿nych aplikacjach Wszystkie parametry ustawiane w menu na panelu czo³owym Zakresy czasowe od 0.001 s do 9999 godzin

C3656

Abstract: C4397 transistor c3399 a1678 transistor C4047 A1526 2sc3916 2SA1573 C3396 a1343
Contextual Info: S A if V O Resistance-Contained Transistor Series F eatu re s App l i e ; a t i o n s ☆ Swi tch ing circuit. ☆ Inverter circuit. ☆ Interi ace circuit. ☆ Driver circuit. oto I C-* lOOmA S e r i e s Ta*25"C ( ): Ma rk ing on MCP, CP. For PNP Type No

C200H-AD003

Abstract: omron e5as c200h id212 C200H-LK202-V1 c200h-lk201-V1 OMRON SYSMAC C200H-LK202-V1 c200h-lk202 C200H-OD211 C200H-PRM21 C200H-ID217
Contextual Info: SPIS TREŒCI DANE TECHNICZNE Podstawowe dane techniczne………………………………………………………………………………………………………….…………. Charakterystyki techniczne…………………………………………………………………………………….………………………………….

wy smd

Abstract: 2sc4118 MARKING WY
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4118 Features Excellent hFE linearity : hFE 2 = 25 (min) (VCE = 6 V, IC = 400 mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V

TRANSISTORS

Abstract: 2SA POWER TRANSISTORS DIGITAL TRANSISTORS
Contextual Info: Introduction Introduction This data book provides data sheets for all leaded transistors that are manufactured by R O H M Co.,Ltd. All transistors are manufactured with R O H M ’s unique technology that provides a class of devices that are highly reliable. They are extremely compact to allow for high density mounting

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3876 TRANSISTOR NPN FEATURES • High hFE: hFE=70-400 · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTC4076 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 100 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTC4076 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation 3. COLLECTOR 1.01 REF 1.25±0.05 PCM: 100 mW (Tamb=25℃) 0.30 1.30±0.03 Collector current

transistor marking WY

Abstract: KTC4076 WY transistor
Contextual Info: KTC4076 KTC4076 SOT-323 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 100 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current ICM: 500 mA Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1666 TRANSISTOR PNP 1. BASE FEATURES z Complementary to KTC4379 z Small Flat Package z Low Saturation Voltage z Power Amplifier and Switching Application

MARKING WY SOT-89

Abstract: WY transistor WY sot-89 transistor marking WY KTA1666 marking wy
Contextual Info: KTA1666 KTA1666 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: -2 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4076 TRANSISTOR NPN FEATURES SOT–323  Excellent hFE Linearity  Complementary to KTA2015 APPLICATIONS  General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

KTC3876

Abstract: sot23 WY KTA1505
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3876 TRANSISTOR NPN FEATURES • High hFE · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3876 TRANSISTOR NPN FEATURES • High hFE · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: KTC3876 Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value 30 35

WY smd transistor

Abstract: smd transistor marking wy
Contextual Info: Transistors IC SMD Type Epitaxial Planar PNP Transistor KTA1666 SOT-89 • Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 ● Collector Power dissipation: PC=500mW +0.1 2.50-0.1 ● Collector Current -Continuous: IC=-2A 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 -0.1

WY transistor

Abstract: ktc3876 transistor marking WY sot23 WY .wy transistor
Contextual Info: KTC3876 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High hFE: hFE=70-400 Complementary to KTA1505 — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage

marking wg

Abstract: WY smd hFE CLASSIFICATION Marking smd wg hFE CLASSIFICATION Marking CE 2SC2859 Marking WO smd sot23 marking wy
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2859 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Excellent hFE linearity : hFE 2 = 25 (min) (VCE = 6 V, IC = 400 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC2859 TRANSISTOR NPN SOT–23 FEATURES  Excellent hFE Linearity  Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22 kΩ BCR139F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration Package BCR139F WYs 1=B 2=E 3=C -