0* DBM SOT343 Search Results

MGA-53543-TR1G

Abstract: marking 17 sot343 SOT343 lna FR4 dielectric constant at 2.4 Ghz MGA-53543
Contextual Info: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available

mga-53453

Abstract: MGA 563 A004R MGA-53543
Contextual Info: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC‑70 SOT343 surface mount plastic package. • Lead-free Option Available

mga-53453

Abstract: A004R MGA-53543 LNA marking 407
Contextual Info: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC‑70 SOT343 surface mount plastic package. • Lead-free Option Available

pseudomorphic HEMT

Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

transistor bc 564

Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

0402CS

Abstract: FPD750SOT343 transistor 24 GHz
Contextual Info: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

FPD6836SOT343E

Abstract: 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540
Contextual Info: FPD6836SOT343E FPD6836SOT3 43ELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

FPD750SOT343

Abstract: 0402CS 3.5GHz BJT
Contextual Info: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

FPD750SOT343E

Abstract: FPD750 FPD750SOT343 0402CS FPD750SOT343CE toko 1201
Contextual Info: FPD750SOT343E FPD750SOT34 3E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

FPD750

Abstract: FPD750SOT343CE 3.5GHz BJT
Contextual Info: FPD750SOT343CE FPD750SOT34 3CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

2.4 ghz transistor wifi amplifier

Abstract: Germanium power
Contextual Info: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

ATF-38143

Abstract: A004R ATF-38143-TR1G
Contextual Info: ATF-38143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available

HBPF-0420

Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04
Contextual Info: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420

lambda alpha

Abstract: ATF-38143
Contextual Info: ATF-38143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available

BFU760F

Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
Contextual Info: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU790F

Abstract: JESD625-A Germanium power
Contextual Info: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU725F

Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
Contextual Info: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

transistor marking N1

Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
Contextual Info: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

DRO lnb

Abstract: JESD625-A BFU630 BFU630F
Contextual Info: BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION

Contextual Info: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION

BFU610F

Abstract: bfu6 NXP Bluetooth IC JESD625-A BFU610
Contextual Info: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION

BFU730F

Abstract: JESD625-A 555 ic Germanium power
Contextual Info: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.