SOT343F Search Results

CFH703A

Abstract: LNA Ku band CFH705 cfh703 ku LNA LNB ku band lnb ku ku band lna LNA ku-band SOT343F
Contextual Info: CFH70x Low-noise, high gain pHEMT transistors in small & easy to use SOT343FP package Fabricated using GaAs process technology, the CFH70x family pHEMT transistors delivers extremely low noise and very high gain in the easy to use SOT343FP package making it the ideal

BFU760F

Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
Contextual Info: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU730F

Abstract: JESD625-A 555 ic Germanium power
Contextual Info: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

ON5088

Abstract: germanium NPN germanium transistors NPN JESD625-A SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power
Contextual Info: ON5088 NPN wideband silicon germanium RF transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

2.4 ghz transistor wifi amplifier

Abstract: Germanium power
Contextual Info: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU725F

Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
Contextual Info: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: BFU690F NPN wideband silicon RF transistor Rev. 2 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 1.2 Features and benefits

transistor marking N1

Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
Contextual Info: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

DRO lnb

Abstract: JESD625-A BFU630 BFU630F
Contextual Info: BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION

BFU660F

Abstract: sdars JESD625-A 25CCBS
Contextual Info: BFU660F NPN wideband silicon RF transistor Rev. 1 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION

SOT343F

Abstract: SOT-343F
Contextual Info: Package outline Philips Semiconductors Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A max bp b1 c D E e

Contextual Info: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION

BFU725F

Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
Contextual Info: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: SOT343F DFP4; Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 15 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal

Germanium power

Contextual Info: ON5088 NPN wideband silicon germanium RF transistor Rev. 2 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: BFG424F NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU610F

Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power
Contextual Info: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: BFG424F NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A max bp b1 c D E e e1 HE Lp w y mm 0.75 0.65

BFU790F

Abstract: JESD625-A Germanium power
Contextual Info: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

JESD625-A

Abstract: BFU710F DRO lnb Germanium power
Contextual Info: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Germanium Transistor

Abstract: Germanium power ON5088,115
Contextual Info: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.