0-20MA 0.5V Search Results

C9042476

Abstract: C9042416
Contextual Info: DK6/I-I DK6/I-I A nalog Signal C onditioners DK6/U-I +24V ° r ,_ 4.20mA 4 ► OV I 5 +24V t °r*" - 0 - 0 4„.20mA ov • 2u 4.20mA OV \ I °6 ♦24V ♦24V , t 0.2flmA 4.20»* 1V ow, u« - I T +Ï4V f V 1, Ontarfns Data C9042476 C9042466 Input / Output

1N916

Abstract: FXT2222A
Contextual Info: NPN SILICON PLANAR SWITCHING TRANSISTOR FXT2222A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. MHz IC=20mA, VCE=20V f=100MHz 8 pF VCB=10V, IE=0, f=140KHz Cibo 25 pF VEB=0.5V, IC=0 f=140KHz Delay Time

rtd pt100 transmitter circuit using opamp

Abstract: pt100 multiplexer pt100 interface current source multiplexer maxim pt100 interface pt100 sensor interface WITH ADC pt100 sensor with adc 4-20mA pt100 maxim sensor for max197 signal conditioning circuit for pt100 pt100 sensor interface WITH ADC for max197
Contextual Info: Maxim > App Notes > A/D and D/A CONVERSION/SAMPLING CIRCUITS Keywords: 4-20mA, 0-10V, +/-10V, 0-5V, +/-5V, multiranging adc, analog to digital, analog digital, converters, programmable logic controllers, plc, overranging, fault Aug 01, 2000 APPLICATION NOTE 270

2SB1562

Contextual Info: 2SB1562- SILICON PNP EPITAXIAL TYPE DARLINGTON POWER POW ER AM PLIFIER APPLICATIONS • • U n it in m m High DC Current Gain. : hFE = 300~1000(V cE =-5V , Ic = -0 .5 A ) Low Collector Saturation Voltage. : VCE (sat) = -0.5V (TYP.) (IC = -2A , IB = -20mA)

74LS

Abstract: DS1000 MXD1000 MXD1000PA MXD1000PD MXD1000SA MXD1000SE MXD1000UA
Contextual Info: 19-1310; Rev 0; 10/97 5-Tap Silicon Delay Line _Applications _Features ♦ Improved Second Source to DS1000 ♦ Available in Space-Saving 8-Pin µMAX Package ♦ 20mA Supply Current vs. Dallas’ 35mA ♦ Low Cost

t2222

Abstract: T2222R B150C MT2907
Contextual Info: FMMT2222 FMMT2222A ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . PARAMETER SYM BOL FMMT2222 MIN. MAX. 250 FMMT2222A MIN. MAX. 300 UNIT CONDITIONS. Transition Frequency Output Capacitance fT MHz lr=20mA, V ce=20V f=100MHz VC~10V, lE=0,

Contextual Info: FXT2222A ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. MHz lc=20mA, Vce=20V f=100MHz Transition Frequency fT Output Capacitance ^obo 8 pF VCE=10V, lE=0, f=140KHz Input Capacitance ^ibo

FZT2222A

Abstract: 1N916 FZT2907A DSA003708
Contextual Info: FZT2222A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL VALUE MIN. Transition Frequency 300 fT UNIT CONDITIONS. MHz IC=20mA, VCE=20V f=100MHz MAX. Output Capacitance Cobo 8 pF VCB=10V, IE=0, f=140KHz Input Capacitance

Contextual Info: FR NOTICE D’INSTRUCTIONS - AN43 Entrée universelle mA, V, potentiomètre Température PT100 ou thermocouples Affichage 20000 points Configuration par touches ou prise USB 2 seuils d'alarme - relais repos/travail Sortie analogique 4-20mA ou 0-10V isolée

MPS2222A

Abstract: 1N916
Contextual Info: MPS2222A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Transition Frequency fT Output Capacitance Cobo Input Capacitance MIN. TYP. MAX. 300 UNIT CONDITIONS. MHz IC=20mA, VCE=20V f=100MHz 8 pF VCB=10V, IE=0, f=140KHz

ptc paras

Abstract: HC5526 HC5526CM PBL3764
Contextual Info: RE ITU CO/PABX SLIC with Low Power Standby 0 to 70 • Programmable Current Feed . . . . . . . . . . . 20mA to 60mA • Programmable Loop Current Detector Threshold and Battery Feed Characteristics • Ground Key and Ring Trip Detection • Compatible with Ericsson’s PBL3764

Contextual Info: RE ITU CO/PABX SLIC with Low Power Standby 0 to 70 • Programmable Current Feed . . . . . . . . . . 20mA to 60mA • Programmable Loop Current Detector Threshold and Battery Feed Characteristics • Ground Key and Ring Trip Detection • Compatible with Ericsson’s PBL3764

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only 4-20mA Current Transmitter with BRIDGE EXCITATION AND LINEARIZATION FEATURES APPLICATIONS • LESS THAN +1% TOTAL ADJUSTED ERROR, -4 0 C TO +85°C • BRIDGE EXCITATION AND LINEARIZATION • WIDE SUPPLY RANGE: 9V to 40V

TSB89

Abstract: MAX13415E MAX13413 340 opto isolator MAX13410E MAX13412EESA MAX13414EESA TSB-89
Contextual Info: 19-1058; Rev 0; 11/07 RS-485 Transceiver with Integrated Low-Dropout Regulator and AutoDirection Control Features ♦ Wide +6V to +28V Input Supply Range ♦ +5V Output Supplies Up to 20mA to External Circuitry ♦ Internal LDO ♦ Low 65µA typ Shutdown Supply Current

smd transistor marking br

Abstract: transistor smd marking smd symbols transistors smd transistor 2SC3515 2SA1384 2SC3515
Contextual Info: Transistors SMD Type High Voltage Control Applications 2SC3515 Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE sat = 0.5V (max) Small Collector Output Capacitance: Cob = 3pF(typ.) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package

2SA1384

Abstract: smd symbols smd transistor marking br transistor smd marking 2SC3515
Contextual Info: Transistors SMD Type High Voltage Control Applications 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE sat = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package

Contextual Info: SMD Type Product specification 2SC3515 Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE sat = 0.5V (max) Small Collector Output Capacitance: Cob = 3pF(typ.) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SA1384

Contextual Info: SMD Type Product specification 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE sat = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515

Contextual Info: SILICON NPN TRIPLE DFFUSED TYPE 2SC4497 Unit in mm +05 25 -0.3 H IG H V O L T A G E CONTROL A P P L I C A T I O N S . • High Voltage: VCBO=300V, VCEO=300V • Low Saturation Voltage: VcE sat =0.5V (Max.) • Small Collector Output Capacitance: MAXIMUM R A T IN G S

KTB1370

Contextual Info: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. A P S High Collector Current : IC=-7A. B E G Low Collector-Emitter Saturation Voltage. K : VCE sat =-0.5V(Max.) at IC=-4A.

Contextual Info: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. A P S High Collector Current : IC=-7A. B E G Low Collector-Emitter Saturation Voltage. K : VCE sat =-0.5V(Max.) at IC=-4A.

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET RFM 01U7P RFM01U7P Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.3V

125OC

Abstract: CHTA42LPT
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHTA42LPT SURFACE MOUNT High Voltage NPN Transistor VOLTAGE 300 Volts CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE SC-59/SOT-346 * Surface mount package. SC-59/SOT-346 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=20mA)

ZTX796A

Abstract: TO-1 amps pnp transistor DSA003777
Contextual Info: ZTX796A SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 12 pF VCB=-10V, f=1MHz ton toff 100 3200 ns ns IC=-100mA, IB1=-10mA