0.3MM PITCH CSP PACKAGE Search Results

MX29LV400C

Contextual Info: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)

MX29SL800C

Abstract: MX29SL800CT Q0-Q15 SA10
Contextual Info: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture

Contextual Info: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture

"TE 555"

Contextual Info: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture

Contextual Info: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture

Contextual Info: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)

TE 555

Contextual Info: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B MX29LV400C T/B, MX29LV800C T/B, MX29LV160C T/B DATASHEET The MX29LV160C T/B product will be phase-out, and is not recommended for new design. The MX29LV160C T/B will be migrated to MX29LV160D T/B, which is a functional compatible product. Please refer to MX29LV160D T/B datasheet for

MX29LV800CBTI-70G

Abstract: MX29LV800CTTI-70G ATIC 64 MX29LV400CBTI-70G MX29LV400CBXBI-70G MX29LV800CBXHI-70G 0.3mm pitch csp package 15 ball CSP mx29LV160cbtc-70g MX29LV800CBXEI-70G
Contextual Info: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)

Contextual Info: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)

524288X8

Contextual Info: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)

3C000

Contextual Info: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)

0.3mm pitch BGA

Abstract: tvr 1024 0.3mm pitch csp package LP62E16512-I
Contextual Info: LP62E16512-I Series 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.0 Initial issue April 26, 2002 Preliminary 1.0 Final version release August 25, 2003 Final 1.1 Add Pb-Free package type

Contextual Info: MX29SL800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Hardware reset pin (RESET#) - Hardware method to reset the device to reading array

LP62E16512-T

Contextual Info: LP62E16512-T Series 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.0 Initial issue April 26, 2002 Preliminary 1.0 Final version release July 17, 2003 Final 1.1 Add Pb-Free package type

29sl800

Abstract: WFBGA
Contextual Info: MX29SL800C T/B MX29SL802C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable

Contextual Info: MX29LV320C T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 8 / 2,097,152 x 16 switchable • Sector Structure - 8K-Byte x 8 and 64K-Byte x 63 • Extra 64K-Byte sector for security - Features factory locked and identifiable, and customer lockable

Contextual Info: MX29LV320C T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 8 / 2,097,152 x 16 switchable • Sector Structure - 8K-Byte x 8 and 64K-Byte x 63 • Extra 64K-Byte sector for security - Features factory locked and identifiable, and customer lockable

29LV800C

Abstract: 29LV800ct MX29LV800CBTC-70 MX29LV800CTTC-70 MX29LV800CTTI-70 mx29lv800cbtc MX29LV800C MX29LV800CT SA10 SA11
Contextual Info: MX29LV800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Sector protection - Hardware method to disable any combination of

eh 11757

Abstract: 0.3mm pitch BGA JEDEC FBGA Coffin-Manson Equation thermal cycling data weibull 0.4mm pitch BGA BGA Solder Ball 0.35mm FBGA 63 PCB design for very fine pitch csp package bt resin
Contextual Info: Daisy Chain Samples Application Note -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Contextual Info: MX29LV800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Sector protection - Hardware method to disable any combination of

Contextual Info: MX29SL800C T/B MX29SL802C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable

Contextual Info: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention

WE 100Y

Abstract: MX29LV320T Q0-Q15 SA10
Contextual Info: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical)

mx29lv320ttc

Abstract: MX29LV320T Q0-Q15 SA10
Contextual Info: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention