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    0.3MM PITCH CSP PACKAGE Search Results

    0.3MM PITCH CSP PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    0.3MM PITCH CSP PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MX29LV400C

    Abstract: No abstract text available
    Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)


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    PDF MX29LV400C MX29LV800C MX29LV160C MX29LV400C) MX29LV800C) MX29LV160C) 16K-Byte 32K-Byte 64K-Byte

    MX29SL800C

    Abstract: MX29SL800CT Q0-Q15 SA10
    Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture


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    PDF MX29SL800C 16K-Byte 32K-Byte 64K-Byte 100mA MX29SL800CT Q0-Q15 SA10

    Untitled

    Abstract: No abstract text available
    Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture


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    PDF MX29SL800C 16K-Byte 32K-Byte 64K-Byte 100mA

    "TE 555"

    Abstract: No abstract text available
    Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture


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    PDF MX29SL800C 16K-Byte 32K-Byte 64K-Byte 100mA "TE 555"

    Untitled

    Abstract: No abstract text available
    Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture


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    PDF MX29SL800C 16K-Byte 32K-Byte 64K-Byte 100mA su/17/2006

    Untitled

    Abstract: No abstract text available
    Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)


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    PDF MX29LV400C MX29LV800C MX29LV160C MX29LV400C) MX29LV800C) MX29LV160C) 16K-Byte 32K-Byte 64K-Byte

    TE 555

    Abstract: No abstract text available
    Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B MX29LV400C T/B, MX29LV800C T/B, MX29LV160C T/B DATASHEET The MX29LV160C T/B product will be phase-out, and is not recommended for new design. The MX29LV160C T/B will be migrated to MX29LV160D T/B, which is a functional compatible product. Please refer to MX29LV160D T/B datasheet for


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    PDF MX29LV400C MX29LV800C MX29LV160C MX29LV160D TE 555

    MX29LV800CBTI-70G

    Abstract: MX29LV800CTTI-70G ATIC 64 MX29LV400CBTI-70G MX29LV400CBXBI-70G MX29LV800CBXHI-70G 0.3mm pitch csp package 15 ball CSP mx29LV160cbtc-70g MX29LV800CBXEI-70G
    Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)


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    PDF MX29LV400C MX29LV800C MX29LV160C MX29LV400C) MX29LV800C) MX29LV160C) 16K-Byte 32K-Byte 64K-Byte MX29LV800CBTI-70G MX29LV800CTTI-70G ATIC 64 MX29LV400CBTI-70G MX29LV400CBXBI-70G MX29LV800CBXHI-70G 0.3mm pitch csp package 15 ball CSP mx29LV160cbtc-70g MX29LV800CBXEI-70G

    Untitled

    Abstract: No abstract text available
    Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)


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    PDF MX29LV400C MX29LV800C MX29LV160C MX29LV400C) MX29LV800C) MX29LV160C) 16K-Byte 32K-Byte 64K-Byte

    524288X8

    Abstract: No abstract text available
    Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)


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    PDF MX29LV400C MX29LV800C MX29LV160C MX29LV400C) MX29LV800C) MX29LV160C) 16K-Byte 32K-Byte 64K-Byte 524288X8

    3C000

    Abstract: No abstract text available
    Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)


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    PDF MX29LV400C MX29LV800C MX29LV160C MX29LV400C) MX29LV800C) MX29LV160C) 16K-Byte 32K-Byte 64K-Byte 3C000

    0.3mm pitch BGA

    Abstract: tvr 1024 0.3mm pitch csp package LP62E16512-I
    Text: LP62E16512-I Series 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.0 Initial issue April 26, 2002 Preliminary 1.0 Final version release August 25, 2003 Final 1.1 Add Pb-Free package type


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    PDF LP62E16512-I MO192 0.3mm pitch BGA tvr 1024 0.3mm pitch csp package

    Untitled

    Abstract: No abstract text available
    Text: MX29SL800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Hardware reset pin (RESET#) - Hardware method to reset the device to reading array


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    PDF MX29SL800C 1Mx8/512K 100mA Architectu/20/2006

    LP62E16512-T

    Abstract: No abstract text available
    Text: LP62E16512-T Series 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.0 Initial issue April 26, 2002 Preliminary 1.0 Final version release July 17, 2003 Final 1.1 Add Pb-Free package type


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    PDF LP62E16512-T MO192

    29sl800

    Abstract: WFBGA
    Text: MX29SL800C T/B MX29SL802C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable


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    PDF MX29SL800C MX29SL802C 16K-Byte 32K-Byte 64K-Byte 100mA 29sl800 WFBGA

    Untitled

    Abstract: No abstract text available
    Text: MX29LV320C T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 8 / 2,097,152 x 16 switchable • Sector Structure - 8K-Byte x 8 and 64K-Byte x 63 • Extra 64K-Byte sector for security - Features factory locked and identifiable, and customer lockable


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    PDF MX29LV320C 32M-BIT 64K-Byte

    Untitled

    Abstract: No abstract text available
    Text: MX29LV320C T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 8 / 2,097,152 x 16 switchable • Sector Structure - 8K-Byte x 8 and 64K-Byte x 63 • Extra 64K-Byte sector for security - Features factory locked and identifiable, and customer lockable


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    PDF MX29LV320C 32M-BIT 64K-Byte 250mA

    29LV800C

    Abstract: 29LV800ct MX29LV800CBTC-70 MX29LV800CTTC-70 MX29LV800CTTI-70 mx29lv800cbtc MX29LV800C MX29LV800CT SA10 SA11
    Text: MX29LV800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Sector protection - Hardware method to disable any combination of


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    PDF MX29LV800C 1Mx8/512K 100mA 44-pin 48-pin 48-ball4/2006 29LV800C 29LV800ct MX29LV800CBTC-70 MX29LV800CTTC-70 MX29LV800CTTI-70 mx29lv800cbtc MX29LV800CT SA10 SA11

    eh 11757

    Abstract: 0.3mm pitch BGA JEDEC FBGA Coffin-Manson Equation thermal cycling data weibull 0.4mm pitch BGA BGA Solder Ball 0.35mm FBGA 63 PCB design for very fine pitch csp package bt resin
    Text: Daisy Chain Samples Application Note -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29LV800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Sector protection - Hardware method to disable any combination of


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    PDF MX29LV800C 1Mx8/512K 100mA 44-pin 48-pin T/26/2006

    Untitled

    Abstract: No abstract text available
    Text: MX29SL800C T/B MX29SL802C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable


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    PDF MX29SL800C MX29SL802C 16K-Byte 32K-Byte 64K-Byte 100mA

    Untitled

    Abstract: No abstract text available
    Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention


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    PDF MX29LV320T/B 32M-BIT 64K-Byte 250mA APR/23/2003 NOV/21/2002 FEB/10/2003 MAR/26/2003 PM0742

    WE 100Y

    Abstract: MX29LV320T Q0-Q15 SA10
    Text: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical)


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    PDF MX29LV320T/B 32M-BIT 200nA 10-year 64K-Byte 112sec 35sec/max 50sec 70/90R WE 100Y MX29LV320T Q0-Q15 SA10

    mx29lv320ttc

    Abstract: MX29LV320T Q0-Q15 SA10
    Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention


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    PDF MX29LV320T/B 32M-BIT 200nA 10-year 64K-Byte FEB/10/2003 MAR/26/2003 APR/23/2003 JUL/04/2003 mx29lv320ttc MX29LV320T Q0-Q15 SA10