MX29LV400C
Abstract: No abstract text available
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV400C)
MX29LV800C)
MX29LV160C)
16K-Byte
32K-Byte
64K-Byte
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MX29SL800C
Abstract: MX29SL800CT Q0-Q15 SA10
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
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MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
MX29SL800CT
Q0-Q15
SA10
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Untitled
Abstract: No abstract text available
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
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MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
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"TE 555"
Abstract: No abstract text available
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
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MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
"TE 555"
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Untitled
Abstract: No abstract text available
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
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MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
su/17/2006
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Untitled
Abstract: No abstract text available
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV400C)
MX29LV800C)
MX29LV160C)
16K-Byte
32K-Byte
64K-Byte
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TE 555
Abstract: No abstract text available
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B MX29LV400C T/B, MX29LV800C T/B, MX29LV160C T/B DATASHEET The MX29LV160C T/B product will be phase-out, and is not recommended for new design. The MX29LV160C T/B will be migrated to MX29LV160D T/B, which is a functional compatible product. Please refer to MX29LV160D T/B datasheet for
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV160D
TE 555
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MX29LV800CBTI-70G
Abstract: MX29LV800CTTI-70G ATIC 64 MX29LV400CBTI-70G MX29LV400CBXBI-70G MX29LV800CBXHI-70G 0.3mm pitch csp package 15 ball CSP mx29LV160cbtc-70g MX29LV800CBXEI-70G
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV400C)
MX29LV800C)
MX29LV160C)
16K-Byte
32K-Byte
64K-Byte
MX29LV800CBTI-70G
MX29LV800CTTI-70G
ATIC 64
MX29LV400CBTI-70G
MX29LV400CBXBI-70G
MX29LV800CBXHI-70G
0.3mm pitch csp package
15 ball CSP
mx29LV160cbtc-70g
MX29LV800CBXEI-70G
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Untitled
Abstract: No abstract text available
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV400C)
MX29LV800C)
MX29LV160C)
16K-Byte
32K-Byte
64K-Byte
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524288X8
Abstract: No abstract text available
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV400C)
MX29LV800C)
MX29LV160C)
16K-Byte
32K-Byte
64K-Byte
524288X8
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3C000
Abstract: No abstract text available
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV400C)
MX29LV800C)
MX29LV160C)
16K-Byte
32K-Byte
64K-Byte
3C000
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0.3mm pitch BGA
Abstract: tvr 1024 0.3mm pitch csp package LP62E16512-I
Text: LP62E16512-I Series 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.0 Initial issue April 26, 2002 Preliminary 1.0 Final version release August 25, 2003 Final 1.1 Add Pb-Free package type
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LP62E16512-I
MO192
0.3mm pitch BGA
tvr 1024
0.3mm pitch csp package
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Untitled
Abstract: No abstract text available
Text: MX29SL800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Hardware reset pin (RESET#) - Hardware method to reset the device to reading array
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MX29SL800C
1Mx8/512K
100mA
Architectu/20/2006
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LP62E16512-T
Abstract: No abstract text available
Text: LP62E16512-T Series 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.0 Initial issue April 26, 2002 Preliminary 1.0 Final version release July 17, 2003 Final 1.1 Add Pb-Free package type
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LP62E16512-T
MO192
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29sl800
Abstract: WFBGA
Text: MX29SL800C T/B MX29SL802C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable
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MX29SL800C
MX29SL802C
16K-Byte
32K-Byte
64K-Byte
100mA
29sl800
WFBGA
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Untitled
Abstract: No abstract text available
Text: MX29LV320C T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 8 / 2,097,152 x 16 switchable • Sector Structure - 8K-Byte x 8 and 64K-Byte x 63 • Extra 64K-Byte sector for security - Features factory locked and identifiable, and customer lockable
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MX29LV320C
32M-BIT
64K-Byte
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Untitled
Abstract: No abstract text available
Text: MX29LV320C T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 8 / 2,097,152 x 16 switchable • Sector Structure - 8K-Byte x 8 and 64K-Byte x 63 • Extra 64K-Byte sector for security - Features factory locked and identifiable, and customer lockable
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MX29LV320C
32M-BIT
64K-Byte
250mA
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29LV800C
Abstract: 29LV800ct MX29LV800CBTC-70 MX29LV800CTTC-70 MX29LV800CTTI-70 mx29lv800cbtc MX29LV800C MX29LV800CT SA10 SA11
Text: MX29LV800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Sector protection - Hardware method to disable any combination of
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MX29LV800C
1Mx8/512K
100mA
44-pin
48-pin
48-ball4/2006
29LV800C
29LV800ct
MX29LV800CBTC-70
MX29LV800CTTC-70
MX29LV800CTTI-70
mx29lv800cbtc
MX29LV800CT
SA10
SA11
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eh 11757
Abstract: 0.3mm pitch BGA JEDEC FBGA Coffin-Manson Equation thermal cycling data weibull 0.4mm pitch BGA BGA Solder Ball 0.35mm FBGA 63 PCB design for very fine pitch csp package bt resin
Text: Daisy Chain Samples Application Note -XO\ 7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Untitled
Abstract: No abstract text available
Text: MX29LV800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Sector protection - Hardware method to disable any combination of
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MX29LV800C
1Mx8/512K
100mA
44-pin
48-pin
T/26/2006
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Untitled
Abstract: No abstract text available
Text: MX29SL800C T/B MX29SL802C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable
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MX29SL800C
MX29SL802C
16K-Byte
32K-Byte
64K-Byte
100mA
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Untitled
Abstract: No abstract text available
Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention
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MX29LV320T/B
32M-BIT
64K-Byte
250mA
APR/23/2003
NOV/21/2002
FEB/10/2003
MAR/26/2003
PM0742
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WE 100Y
Abstract: MX29LV320T Q0-Q15 SA10
Text: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical)
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MX29LV320T/B
32M-BIT
200nA
10-year
64K-Byte
112sec
35sec/max
50sec
70/90R
WE 100Y
MX29LV320T
Q0-Q15
SA10
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mx29lv320ttc
Abstract: MX29LV320T Q0-Q15 SA10
Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention
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MX29LV320T/B
32M-BIT
200nA
10-year
64K-Byte
FEB/10/2003
MAR/26/2003
APR/23/2003
JUL/04/2003
mx29lv320ttc
MX29LV320T
Q0-Q15
SA10
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