29SL800 Search Results

Contextual Info: PR ELIM IN ARY AMDZ1 29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations

Contextual Info: ADVANCE INFORMATION A M D ii 29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations

sck082

Contextual Info: TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L1 Series TMP91FY28 Semiconductor Company Under development TMP91FY28 CMOS 16-Bit Microcontroller TMP91FY28FG 1. Outline The TMP91FY28 is a high-speed and high-performance 16-bit microcontroller suitable for

29SL800C

Contextual Info: PRE LIM IN A R Y AMD il 29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations

Contextual Info: ADVANCE INFORMATION A M D ii 29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations ■

Contextual Info: A D V A N C E IN F O R M A T IO N AMDtl 29SL800B 8 Megabit 1 M X 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations

MX29SL800C

Abstract: MX29SL800CT SA10 SA11 SA12 SA13
Contextual Info: 29SL800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Hardware reset pin (RESET#) - Hardware method to reset the device to reading array

Contextual Info: ADVANCE INFORMATION DRAFT AM Dil 29SL800C 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations ■ Top or bottom boot block configurations

Contextual Info: ADVANCE INFORMATION AMDil 29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations ■ Top or bottom boot block configurations

29sl800

Abstract: WFBGA
Contextual Info: 29SL800C T/B MX29SL802C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable

Contextual Info: 29SL800C T/B MX29SL802C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable

Contextual Info: PR ELIM IN ARY AMDZ1 29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations

Contextual Info: AMD il PRELIM IN ARY 29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations

29LV160TE

Abstract: 29lv800ta Micron 512MB NOR FLASH 29F800TA 29F033C 29f400tc TSOP 48 Package 29f160te Micron 32MB NOR FLASH 29f002tc
Contextual Info: T H E Home Products P O S S I B I L I T I E S A R E I N F I N I T E Contacts Contents Introduction to Flash Memory MEMORY SOLUTIONS NOR-Flash MirrorFlashTM FCRAMTM – Fast Cycle Ram MCP – Multi-Chip Packages Packaging Technology NOR-FLASH, MIRRORFLASHTM,

Contextual Info: 29SL800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Hardware reset pin (RESET#) - Hardware method to reset the device to reading array

TMP91FY28

Abstract: TMP91FY28FG
Contextual Info: TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L1 Series TMP91FY28 Semiconductor Company Preface    Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. 

Contextual Info: Advance information •■ 29SL800 A 1.8V ! M x 8 / 5 1 2 K x l 6 CMOS Flash EEPROM Features • Organization: 1Mx 8 /5 1 2 K x 16 • Sector architecture • • • • • Law power consumption One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors One 8K; two 4K; one 16K; and fifteen 32Kword sectors

Contextual Info: PRELIMINARY 29SL800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Hardware reset pin (RESET#) - Hardware method to reset the device to reading array

Contextual Info: PRELIMINARY 29SL800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Hardware reset pin (RESET#) - Hardware method to reset the device to reading array