0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T Search Results

2SC2099

Abstract: 2SC2099 equivalent 22AF copper wire 20WPEP
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2099 2 ~ 3 0M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics • Output Power Po-20Wpj?p Minimum Gain Gpe=12dB Efficiency nc=35%(Min.)

2SC2509

Abstract: 10WPEP 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 121ID AC75 C8 15t
Contextual Info: 2SC2509 S IL IC O N N P N 'E P IT A X IA L P L A N A R TYPE Unit in mm 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE P- FEATURES : _ § I 1 £ to 1 . Specified 12.5V, 28MHz Characteristics . | irj H : Output Power : Po=10WpEP <

2SC2395

Abstract: E5OU 12ID 2SC239
Contextual Info: TOSHIBA 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 10WpEP (Min.) Power Gain Gp = 17dB (Min.)

2sc2099

Contextual Info: TOSHIBA 2SC2099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE QQ Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 20W pEP Gtïr = 12dB (Min.) Power Gain rj Q = 35% (Min.)

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b DE~J TDTTESD 00D7S4b □ 56C 0 7 5 4 6 <DIS C R E T E/ OP TO r~33-°? o SILICON NPN EPITA XIA L PLANAR TYPE Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE) y _ § IS

2SC2395

Abstract: CC125 AN374 NC35
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 2 ~ 3 0M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics Output Power : Po=10WpEP Minimum Gain : Gpe=17dB Efficiency nc=35%(Min.)

2SC2290

Abstract: 12ID 2SC2290 equivalent
Contextual Info: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain Gp = 11.8dB (Min.)

Contextual Info: T O SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 Ç C 7 7 Q fl Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain

2SC2395

Contextual Info: TOSHIBA 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 2-30MHZ SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE U nit in mm Cu Z-03.Z±G .l • H £ Specified 12.5V, 28MHz Characteristics Power : Po = lOWp^p K n —_l/7iud fFl

60WpEp

Abstract: 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290
Contextual Info: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • • V / / / A Xr i X > T \ X * IA c A X . \ < ' X "H 02 ^ x ^ = r) Q = 'V i S b % — MAXIMUM RATINGS (Tc 25°C)

2SC2509

Abstract: AC75
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b DeTJiG^SSD 56C <DIS CR ET E/ OP TO 07546 D D D 7 S 4t. □ r - 3 3 ~ ° ? o 2SC2509 S IL IC O N NPN E P IT A X IA L P LA N A R T Y P E _ Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE)

2-13B1A

Abstract: Transistor S5B 2SC2290 equivalent 2sc2290
Contextual Info: TO SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 -3 0 M H Z S5B LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP Power Gain Gp = 11.8dB (Min.)

Contextual Info: T O SH IB A 2SC2099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 Ç C 1 fl Q Q 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 20WpEP (Min.) Power Gain

Contextual Info: T O SH IB A 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 10WpEP (Min.) Power Gain Gp = 17dB (Min.)