2SC239 Search Results

Hitachi DSA002754

Contextual Info: 2SC2396, 2SC2543, 2SC2544 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline 2SC2396, 2SC2543, 2SC2544 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SC2396 2SC2543 2SC2544 Unit

Contextual Info: 2SC2395 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)40 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.

2sc2543

Abstract: 2SA1025
Contextual Info: 2SC2396,2SC2543,2SC2544 Silicon NPN Epitaxial HITACHI Application • Low frequency amplifier • Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline TO-92 1 h \ IP 1. Emitter 2. Collector 3. Base I 3 2 376 1 2SC2396,2SC2543, 2SC2544 Absolute Maximum Ratings (Ta = 25°C)

2SC2S45

Abstract: 2SA1025 2SA108
Contextual Info: HITACHI 2SC2396, 2SC2543, 2SC2544 'S SiUCON NPN ePtTAXIAt LOW FREQUENCY AMPLIFIER Compìiwnontary p<nr with 2SA1025, 2SA108-. and 2SA1082 r~ r Î » A -Í.; It o * ^ JEOeC TO-92 I ABSOLUTE MAXIMUM RATINGS iTj 2 r C } I setu Symby". MAXIMUM COLLECTOR DISSIPATION

2SC2879

Abstract: 150PEP
Contextual Info: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32

2SA1025

Abstract: Hitachi DSA002754
Contextual Info: 2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Outline 2SA1025, 2SA1081, 2SA1082 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SA1025 2SA1081 2SA1082 Unit

CRO1C

Abstract: 2SA1025 2SC2543 k 4110 2SA1081 2SA1082 2SC2396 2SC2544
Contextual Info: HITACHI 2SA1025, 2SA1081, 2SA1082 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SC2396, 2SC2543 and 2SC2544 fjf 1. lim itic i 2 . C o lle c to r 3. D i k irt jlUrt JEDEC TO-92) MAXIMUM COLLECTOR DISSIPATION CURVE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2SC2389

Abstract: 2SC2390 2sa1038 transistor 2SA1038 2SA1039
Contextual Info: ROHM CO . L T P h7 >y - MOE D 7 0 2 0 ^ GD0S70Ô 7. $ /Transistors 2SC2389/2SC2390 — 2 S C 2 3 8 9 2 g Q 2 3 S H I — I, - rs]|iiJJ/x iö ,/5 /Ä ia ; vo|ta9e Low Frec»-Low Noise Amp. Epitaxial Planar NPN Silicon Transistors f t f f î'^ ^ E / D i m e n s i o n s U n it : mm)

C2389

Abstract: 2sc2389 C2390
Contextual Info: h "7 2SC2389/2SC2390 /Transistors 2SC2389 I t f ^ d r '> T ^ 7 “U - ^ N P N O C r O O D n • v V fc w 5 # U S IfŒ ffiS ftft§ fÈ B ÎfllS ffl/H ig h Voltage Low Freq. Low Noise Amp. Epitaxial Planar NPN Silicon Transistors ' > 'J 13 > b 7 > 'S X $ • W f i\T ;i[5 |/D im e n s io n s Unit : mm

Contextual Info: T O SH IB A 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 10WpEP (Min.) Power Gain Gp = 17dB (Min.)

2SC2391

Abstract: pjw1
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2391 Unit In mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=3W Min. (f=470MHz, VCC=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCc=15V, Pi=0.4W, f=470MHz

2SC2395

Abstract: CC125 AN374 NC35
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 2 ~ 3 0M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics Output Power : Po=10WpEP Minimum Gain : Gpe=17dB Efficiency nc=35%(Min.)

2SA1025

Abstract: 2SA1081 2SA1082 2SC2396 2SC2543 2SC2544 2SC2545 2SC2546 2SC2547 Hitachi DSA00398
Contextual Info: 2SC2396, 2SC2543, 2SC2544 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SC2396, 2SC2543, 2SC2544 Absolute Maximum Ratings (Ta = 25°C)

2SA1025

Abstract: Hitachi DSA0097 2SA1081 2SA1082 2SA1083 2SC2396 2SC2543 2SC2544
Contextual Info: 2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SA1025, 2SA1081, 2SA1082 Absolute Maximum Ratings (Ta = 25°C)

2SC2395

Contextual Info: TOSHIBA 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 2-30MHZ SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE U nit in mm Cu Z-03.Z±G .l • H £ Specified 12.5V, 28MHz Characteristics Power : Po = lOWp^p K n —_l/7iud fFl

2SA1025

Contextual Info: HITACHI 2SA1025, 2SA1081, 2SA1082 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Pi K' b, 1. £rom*f 2. Collector Î. iia.w Dijjxrmioft* in mm {JEDEC TO-92) • ABSOLUTE MAXIMUM RATINGS (Ta=25"C) MAXIMUM COLLECTOR DISSIPATION

2SA1025

Abstract: 2SC23 2SC2547 2SA1031 2SA1082 2SC2396 2SC2543 2SC2544 2SC2545 2SC2546
Contextual Info: HITACHI 2SC2396, 2SC2543, 2SC2544 SILICON NPN EPITAXIAL LOW FREQ UEN CY AMPLIFIER Compltsmonlary pair with 2SA1025. 2SA1031 ar>rf 2SA1082 I. fcfliilttr IB. ^ , "T l~^ _ ! C« ic<w A - — =m Hi« V mi mmj (JE D E C TO-92) A BSO LUTE MAXIMUM RATINGS (Ta-25°C>

Hitachi DSA0076

Abstract: 2SC2396 2SC2543 2SC2544 2SC2545 2SC2546 2SC2547
Contextual Info: 2SC2396, 2SC2543, 2SC2544 Silicon NPN Epitaxial ADE-208-1062A Z 2nd. Edition Mar. 2001 Application • Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2396, 2SC2543, 2SC2544 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

C2389

Abstract: 2SC2389 LPGL 2SC2390 SA-1038 2SC2389S
Contextual Info: h ~P> V $ /Transistors 2SC2389/2SC2389S/2SC2390 2SC2389/2SC2389S/2SC2390 I fcf £ V T — NPN '> U - l > Epitaxial Planer NPN Silicon Transistors iliiÎJŒ' 5;ü>Jt15:! ;H Î i ,liffl/H ig h Voltage Low Freq. Low Noise Amp. il-J fi^ iilS I/D im e n s io n s (Unit : mm)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC144

Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
Contextual Info: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845