000107T Search Results

LA7031

Abstract: LA7034 la7035 Q001 portable vhs PAL 007 A LA703 VHS Luminance sanyo
Contextual Info: SANYO SEMICONDUCTOR CÔRP 7b D E | ? cici7Q7b 000107t, 7 76C 01876 7997076 SANYO SEMICONDUCTOR CORP LA7034 m o n o lith ic lin e a r IC 07^77^7-/3 CIRCUIT D R A W I N G No.21 3 4 LUMINANCE SIGNAL PROCESSOR FOR VTR OF VHS SYSTEM 3061 T he L A 7 0 3 4 is a V T R luminance signal recording/playback 1C whose recording circuit block consists of a

DME10

Abstract: DME150 acrian inc
Contextual Info: 0182998 G ENER A L ACRIAN INC 97D 01078 DME 150 D ES C R IP TIO N All devices utilize the most advanced design and process technologies. These features provide the most consistent and reliable chip and package combination designed, built and tested specifically for use in airborne DME.

Contextual Info: NN51V17805B series EDO Hyper Page Mode CMOS 2M x 8bit Dynamic RAM ' \y, NPN/A^ DESCRIPTION The NN51V17805B series is a high performance CMOS Dynamic Random Access Memory organized as 2,097,152 words by 8 bits. Thè NN51V17805B series is fabricated with advanced CMOS technology and designed with innovative de­

FET MARKING QG

Abstract: FSS208 S208
Contextual Info: FSS208 N- Channel Silicon MOS FET DC-DC Converter TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage -30 VDSS Gate to Source Voltage ±20 VGSS Drain Current DC 10 ID

dram 4mx4

Abstract: ca713
Contextual Info: EDI4M44096C M £Á ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS, Multichip Microcircuit The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit

Contextual Info: FTS2015 N- Channel Silicon MOS FET Very High-Speed S/W Use TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height 1.1mm. Absolute Maximum Ratings / Ta=25°C unit Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse)