000171B Search Results
000171B Price and Stock
Skyworks Solutions Inc 514KAC000171BAGDIFFERENTIAL/SINGLE-ENDED; I2C P |
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514KAC000171BAG | 200 |
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514KAC000171BAG |
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514KAC000171BAG | 1 |
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Skyworks Solutions Inc 514KAC000171BAGRDIFFERENTIAL/SINGLE-ENDED; I2C P |
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514KAC000171BAGR | Reel | 1,000 |
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514KAC000171BAGR |
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514KAC000171BAGR | 1 |
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GEMCO 2000171BGEARED ROTARY LIMIT SWITCH, 3&4 CAM, 2000 SERIES |
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2000171B | Bulk | 5 Weeks | 1 |
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000171B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Radial Leaded Capacitors ^ ^ /7'<95 Metallized Polyester Dielectric Type RBEN, RBEO, RBEP Preformed Case with Epoxy Fill Insulation Resistance Category <100VDC >100VDC 1,000 1,000 MegOhms Maximum Need Not Exceed RBEN RBEO,RBEP 10,000 10,000 10,000 30,000 |
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100VDC 50VDC | |
Contextual Info: P1VI’ V - PMC'S,erra’ /nc PwmnaryInformation PMG47D113 SSUE2 PM3351 ELAN 1x100 1-PORT1WOOhJBir/SEmEFt£TSWrTCH FEATURES • Single-chip, 1-port, full duplex or half duplex, 10/1 OOBaseT switching device for low-cost unmanaged and managed networks. • |
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PM3351 1x100 PM0970113 PM3351-RC PM3351-SW 00111A | |
CBAS17Contextual Info: Central Sem iconductor Corp. CBAS17 LOW V O LT A G E STABISTOR DESCRIPTION: T h e C E N T R A L S E M IC O N D U C T O R C B A S 1 7 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. |
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CBAS17 OT-23 TheCENTRALSEMICONDUCTORCBAS17 100mA 000171b | |
Contextual Info: MOSAI C S E M I C O N D U C T O R INC blE D • b 3 S 3 B 7 T Q 0 0 1 7 C H E3T * M O C 32 K x 8 m o l a t e SRAM MSM832-020/025/35 Issue 1.1 : June 1993 ADVANCE PRODUCT INFORMATION S em iconductor Inc. Pin Definition 32,768 x 8 CMOS High Speed Static RAM |
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MSM832-020/025/35 MIL-STD-883, | |
CL9100 MPEG
Abstract: cl9100 c-cube CL9100
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CL9100 CL9100, 17bH2bc 00017b? CL9100 MPEG cl9100 c-cube | |
CSM 6850
Abstract: cr 6850 t
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ICS2115 ICS2115, 16-bit, ICS2115. 16-bit ICS2115V ICS2115Y GDQ1723 G-157 CSM 6850 cr 6850 t | |
Contextual Info: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current |
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S29F040 040-90T -120TC -150TC 040-55L 040-70L 040-90L 040-150L | |
FW100A9Contextual Info: Data Sheet June 1993 = ^A T& T Microelectronics FW050A, FW100A, FW150A Power Modules: dc-dc Converters; 48 Vdc Input, 5 Vdc Output, 50 W to 150 W Features • Wide input range ■ High efficiency: 82% typical a Parallel operations with load sharing ■ Low profile: 0.5 in. |
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FW050A, FW100A, FW150A FW150A DS92-055EPS FW100A9 | |
rn73eContextual Info: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 A vailable S izes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power R atings - 0.1 O hm to 22 M eg O hm R e sistance R ange - T ight Tolerance and Low T C R A vailable |
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120/yin/3 D17E1 rn73e | |
Contextual Info: 2 Megabit High Speed CM OS SRAM D E N S E -P A C DPS256S8BN MICROSYSTEMS D ESCRIPTIO N : The DPS256S8BN is a high speed military 256K x 8 high-density, static RAM module comprised of two high speed ceramic 128K x 8 monolithicSRAM's, an advanced high-speed CMOS decoder and decoupling |
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DPS256S8BN DPS256S8BN 600-mil-wide, 32-pin A0-A17 California92841-1428 00D1720 | |
MDD172-16N1
Abstract: M235A E72873 MDD172 MDD172-06N1 MDD172-08N1 MDD172-12N1 MDD172-18N1 ITT DIODE 129
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MDD172 MDD172-06N1 MDD172-08N1 MDD172-12N1 MD0172-14N1 MDD172-16N1 MDD172-18N1 MDD172-16N1 M235A E72873 MDD172-06N1 MDD172-08N1 MDD172-12N1 MDD172-18N1 ITT DIODE 129 | |
Contextual Info: Raytheon Electronics Semiconductor Division ANALOG RC4277 Dual Precision Operational Amplifier Features • • • • • High DC precision Very low VOS - 30 iV Very low VOS drift - 0.3 |lV /“C High open-loop gain - 5000 V/mV High CM RR - 120 dB High PSRR - 120 db |
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RC4277 RC4277 RC4077, OP-07 OP-77 75173LD 0Q01715 | |
Contextual Info: Actel Mask Programmed Gate Arrays F e a tu re s D e s c rip tio n Mask Programmed versions of Actel Field Programmable Gate Arrays FPGAs Significant cost reduction for medium- to high-volume applications Pin-for-pin compatible with Actel FPGAs PCI Local Bus Revision 2 Compliant |
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M1440 176-Pin 011241b | |
p525
Abstract: 2N4398 2N6124 OM7662SC OM7663SC OM7664SC
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OM7662SC OM7664SC OM7663SC HERMETICTO-258AA O-258AA O-247 2N6124 2N4398 OM76S2SC p525 2N4398 2N6124 OM7663SC | |
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Contextual Info: DENSE-PAC 2 Megabit H igh Speed C M O S SRAM M1CROSYSTEMS DPS256S8BN D ES C R IP TIO N : The DPS256S8BN is a high speed military 256K x 8 high-density, static RAM module comprised of two high speed ceramic 128K x 8 monolithic SRAM's, an advanced high-speed CM O S decoder and decoupling |
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DPS256S8BN DPS256S8BN 600-mil-wide, 32-pin 256Kx8 California92841-1428 30A036-32 | |
Contextual Info: PMC-Steira, Inc. errata I • V I V — _ P M 5 3 4 7 S / U N I - P L U S ISSUE2 SAUFNLGBIbEÎWORKINIERFKE-PlJUB PM5347 SATURN USER NETWORK INTERFACE PLUS ERRATA Issue 2: March 1996 PMC-Sierra, Inc. 8501 Commerce Court, Burnaby, BC Canada V5A 4N3 604 668 7300 |
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PM5347 | |
Contextual Info: D ata S heet PM ^^ ^ M 3m E L A M £ P H ^ Q U A D E T H E R N E T 10/100PHY PMC-961137 1. FEATURES Monolithic Quad Fast Ethernet Physical Layer Device for Local Area Networks LANs . Combines 10Base-T, 100Base-TX and 100Base-FX in a Quad PHY device to simplify the design and manufacturing of Fast Ethernet products. |
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PMC-961137 10/100PHY 10Base-T, 100Base-TX 100Base-FX 100Base-TX, | |
Contextual Info: QS3800 ADVANCE INFORMATION High-Speed CMOS 10-Bit QuickSwitch with Precharged Outputs q s 38oo FEATURES/BENEFITS • • • • 5£i switches connection between two ports Zero propagation delay Low power QCMOS technology Outputs precharge voltage to minimize |
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QS3800 10-Bit 24-pin MDSL-00086-00 74bbfl03 | |
afa461
Abstract: AHE2800S AHE2805S AHE2812S AHE2815S ADVA ADVA 750 MIL-STD-461B
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T-57-11 AHE2800S MIL-STD-704D 28VDC 250kHz. AHE2805S AHE2812S/AHE2815S afa461 AHE2805S AHE2812S AHE2815S ADVA ADVA 750 MIL-STD-461B | |
Contextual Info: Type RBEN, RBEO, RBEP Radial Leaded Capacitors ^ ^ Metallized Polyester Dielectric Preformed Case with Epoxy Fill Insulation Resistance Category MegOhms x |iF MegOhms Maximum Need Not Exceed RBEN RBEO,RBEP Test Voltage Electrification Time Physical Dielectric Material |
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100VDC 50VDC | |
1300-4152Contextual Info: ADMA-E1 Device 2 Mbit/s to TU-12 Async Mapper-Desync TXC-04002 DATA SHEET FEATURES s • Add/drop two 2048 kbit/s signals from a Virtual Container-4 VC-4 using Tributary Unit-12s (TU-12s) • Independent add/drop mode between ports • Selectable HDB3 positive/negative rail or NRZ |
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TU-12 TXC-04002 Unit-12s TU-12s) -43cjQOmSS TXC-04002-MB 1300-4152 | |
41 mux using ic 74153
Abstract: mvb bus schematics 74153 mux opti 82c602 internal diagram of ic 74153 74153 multiplexer IBM Blue Lightning TE VIPER 60 VA 4432 dram pin diagram of ic 74373
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82C465MV/MVA/MVB 82C465MV 208-pin 100-pin 32-bit 100TQ 41 mux using ic 74153 mvb bus schematics 74153 mux opti 82c602 internal diagram of ic 74153 74153 multiplexer IBM Blue Lightning TE VIPER 60 VA 4432 dram pin diagram of ic 74373 |