0001FL3FL Search Results

Contextual Info: Commercial INC. PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • ■ Ultra Low Power Operation Architectural Flexibility - V cc = 5 Volts ±10% - Icc = 10 |iA typical at standby - Icc = 2 mA (typical) at 1 MHz - CMOS Electrically Erasable Technology

tin 612, 12 volt regulator

Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet ATM/SONET/SDH 155/622 Mb/s Transceiver Mux/Dmux with Integrated Clock Generation VSC8110 Features • Operates at either STS-3/STM-1 155.52 Mb/s or STS-12/STM-4 (622.08 Mb/s) data rates • Integrated PLL for clock generation - No

Contextual Info: ^EDI _ ELECTRO NIC DESIGNS IN C EDI7F32128C High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Module r a iy ia iM ï Features The EDI7F32128C is a 5V-0nly In-System Programmable 128Kx32 bit C M O S Flash and Erasable Read Only Memory Module. Organized as

Contextual Info: Commercial/ Industrial INC. PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • - ■ Architectural Flexibility Multiple Speed Power, Temperature Options - Enhanced architecture fits in m ore logic - 74 product te rm s x 36 input AN D array

25PD5

Abstract: pc627
Contextual Info: QS3B441, QS3B481 ADVANCE INFORMATION High-Speed CMOS CrossbarSwitch Clocked 4 Port x 4, 4 Port x 8 Q QS3B441 QS3B481 FEATURES/BENEFITS • • • • • Bi-directional analog or digital switching 4 ports of 4 bits 3B441 4 ports of 8 bits (3B481) Decoded and registered control signals