0002SS Search Results

Contextual Info: Product B ulletin O P130W b7TßSßO 00025S3 öbl “ OPTEK M ay 1996 GaAs Hermetic Infrared Emitting Diodes Types QP130W, 0P131W, OP132W, OP133W .a Features A b so lute M axim um Ratings T a = 25 ° C unless otherw ise noted • Wide irradiance pattern • Enhanced temperature range

Contextual Info: optek P roduct B ulletin OP165A June 1996 G aA s Plastic Infrared Emitting Diodes Types OP165A, OP165B, OP165C, OP165D • • Narrow irradiance pattern Mechanically and spectrally matched to the OP5Û5 and OP535 series devices • Variety of power ranges

Contextual Info: Advance Data Sheet December 1996 microelectronics group Lucent Technologies Bell Labs Innovations FW300-Series Power Modules: 36 Vdc to 75 Vdc Input; 300 W Features • Size: 61.0 mm 2.4 in. x 116.8 mm (4.6 in.) x 13.5 mm (0.5 in.) ■ Operating case temperature range:

81E TRANSISTOR

Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
Contextual Info: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power