OP165 Search Results

T35 diode

Abstract: ndm diode diode L2.70 OP165W OP505W diode T35 diode T35 -4-D6
Contextual Info: 0 .OPTEK Product Bulletin O P 165W Jun e 1996 GaAs Plastic Infrared Emitting Diode Type OP165W • Wide irradiance pattern • Mechanically and spectrally matched to the OP505W • Small package size for space limited applications • T-1 package style Reverse Voltage. 2.0 V

Contextual Info: Plastic Infrared Emitting Diode OP165, OP166 Series Features: • • • • • • T-1 3 mm package style Choice of narrow or wide irradiance pattern Choice of dome lens or flat lens Mechanically and spectrally matched to other OPTEK devices Higher power output than GaAs at equivalent drive currents

OP165W

Abstract: OP505W
Contextual Info: OPTEK Product Bulletin OP165W June 1996 GaAs Plastic Infrared Emitting Diode Type OP165W .125 3.18 .115 (2.92) ANODE .125 (3.18) .115 (2.92) CATHODE .030 (0.76)NOM — .165 (4.19) .145 (3.68) .050 (1.27)NOM J .025 (0.64) SO. NOM .015 (0.38) .500 (12.70)-—

ai 972

Abstract: K6500 OP165 OP165A OP165B OP165C OP165D OP505 OP535 E5B0
Contextual Info: 0 OPTEK P ro d u c t B u lle tin O P165A J u n e 1996 GaAs Plastic Infrared Emitting Diodes Types OP165A, OP165B, OP165C, OP165D F e a tu re s • Narrow irradiance pattern • Mechanically and spectrally matched to the OP505 and OP535 series devices • Variety of power ranges

Contextual Info: . O PTEK Product Bulletin OP165W June 1996 GaAs Plastic Infrared Emitting Diode Type OP165W Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • W ide irradiance pattern • Mechanically and spectrally matched to the OP505W • Small package size for space limited

Contextual Info: optek P roduct B ulletin OP165A June 1996 G aA s Plastic Infrared Emitting Diodes Types OP165A, OP165B, OP165C, OP165D • • Narrow irradiance pattern Mechanically and spectrally matched to the OP5Û5 and OP535 series devices • Variety of power ranges

axp 195

Abstract: k6500 OP165 OP165A OP165B OP165C OP165D OP505 OP535
Contextual Info: OPTEK Product Bulletin OP165A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP165A, OP165B, OP165C, OP165D .200 5.08 .180 (4.57) ANODE .125 (3.18) .180 (4.57) ~ .165 (4.19) .145 (3.68) .050 (1.27)-, NOM r CATHODE .025 (0.64) .030 (0.76)NOM .015 (0.38)

30076

Contextual Info: @ .O Q E K Product Bulletin OP165W June 1996 GaAs Plastic Infrared Emitting Diode Type OP165W •125 3.18 .115 (2.92)" ^11 . .165 (4.19) ' .145 (3.68) .050 (1.27)-. s .125 (3.18) .115 (2.92) □ □ .025 (0.64) .015 (0.38) . 0 30^0.76)— ■» » . 5 0 0 (12.70) —

OP165W

Abstract: OP505W
Contextual Info: OPTEK Product Bulletin OP165W June 1996 GaAs Plastic Infrared Emitting Diode Type OP165W .125 3.18 .115 (2.92) ANQDE .165 (4.19) .145 (3.68) .050 (1.27)NQM .125 (3.18) .115 (2.92) CATHODE .025 (0.64) .015 (0.38) .030 (0.76)NOM .500 ( 12.70) — MIN • FOR IDENTIFICATION PURPOSES. ANODE LEAD IS

OP505

Abstract: K6500 OP165 OP165A OP165B OP165C OP165D OP535 k650
Contextual Info: OPTEK P ro d u ct B ulletin OP165A Ju n e 1996 G a A s P lastic Infrared Em itting D io d e s Types OP165A, OP165B, OP165C, OP165D .200 <5 .0 8 .180 <4 .5 7 ) 05U ANODE- .165 <4 .19 ) .145 < 3 .6 8 ) 27^ □ .125 <3 .18) .115 <2 .9 2 ) CATHODE T .025 <0 .6 4 )

P165C

Contextual Info: 0 O P IE K Product Bulletin OP165A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP165A, OP165B, OP165C, OP165D Features Absolute Maximum Ratings T a = 25° C u n le ss otherwise noted • Narrow irradiance pattern • Mechanically and spectrally matched

Contextual Info: Product Bulletin OP165A April 1993 OPTEK G a A s Plastic Infrared Emitting Diodes Types OP165A, OP165D DIMENSIONS ARE IN INCHES MIUIMETERSI MEASUREMENT SURFACE (NOTE 3l 165(4.191, r .0 5 0 0 .2 7 1 _ , NOM 1 y \_ .02510.641 pfs »! ni* .015(0.361 SQ N0M

op166 5

Abstract: OP165 OP165A OP165B OP165C OP165D OP165W OP166 OP166A OP505
Contextual Info: Plastic Infrared Emitting Diode OP165, OP166 Series Features: • • • • • • T-1 3 mm package style Choice of narrow or wide irradiance pattern Choice of dome lens or flat lens Mechanically and spectrally matched to other OPTEK devices Higher power output than GaAs at equivalent drive currents

OP165C

Abstract: OP165D OP165W OP166 OP166A OP505 OP535 OP165 OP165A OP165B
Contextual Info: Plastic Infrared Emitting Diode OP165, OP166 Series Features: • • • • • • T-1 3 mm package style Choice of narrow or wide irradiance pattern Choice of dome lens or flat lens Mechanically and spectrally matched to other OPTEK devices Higher power output than GaAs at equivalent drive currents

Contextual Info: 0 . O PTEK Product Bulletin OP165W April 1993 GaAs Plastic Infrared Emitting Diode Type OP165W DIMENSIONS ARE IN INCHES (MILLIMETERS * FOR IDENTIFICATION PURPOSES, ANODE LEAD IS .060 (1.52) NOM. LONGER THAN CATHODE LEAD. Features Absolute Maximum Ratings (T a = 25°C unless otherwise noted)

OP165W

Abstract: OP505W IB 115
Contextual Info: @.OPIEK •i bv^asao □□□2bL3 abb Product Bulletin O P505W June 1996 NPN Silicon Phototransistor Type OP5Q5W Features A b so lute M axim um R atings T a = 25° C unless otherw ise noted • Wide receiving angle • T-1 package style • Small package size for space limited

all datasheet phototransistor

Abstract: Phototransistor with base emitter Reflective Optical Sensor focused E152 OP165 OP265 OP505 OP535 OPB702 OPB702D
Contextual Info: Product Bulletin OPB702 October 2000 Reflective Object Sensors Type OPB702, OPB702D, OPB702R Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • Focused for maximum sensitivity • Phototransistor (OPB702) or Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . . -40°C to +85°C

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

OP1652

Contextual Info: OPA1652 OPA1654 Burr-Brown Audio SBOS477 – DECEMBER 2011 www.ti.com Low Noise and Distortion, General-Purpose, FET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1652, OPA1654 FEATURES DESCRIPTION • Low Noise: 4.5 nV/√Hz at 1 kHz • Low Distortion: 0.00005% at 1 kHz

Contextual Info: OPA1652 OPA1654 Burr-Brown Audio SBOS477 – DECEMBER 2011 www.ti.com Low Noise and Distortion, General-Purpose, FET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1652, OPA1654 FEATURES DESCRIPTION • Low Noise: 4.5 nV/√Hz at 1 kHz • Low Distortion: 0.00005% at 1 kHz

Contextual Info: 0 . OPTEK P roduct B ulletin OPB708, OPB709 June 1996 Reflective Object Sensors Types OPB7Q8, QPB709 Features A bso lu te Maxim um R atings Ta = 25° C unless otherwise noted • Focused for maximum sensitivity • Phototransistor (OPB708) or photodarlington (OPB709) output

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

led and phototransistor pair number

Abstract: led phototransistor 3 pin pair of led and photo transistor IR sensor and photo diode pair OPB856Z OP165 OP505 OPB856 LED Reflective Optical Sensor OP999
Contextual Info: Wide Gap Optical Sensor OPB856Z Features: x Designed for Industrial applications x Threaded housing M12 X 1 TH , Nut included Product Photo Here x Molded connectors mates with Molex 03-06-2023 plug. x Emitter (White) and Senor (Black) housing color coded

OP165

Abstract: OP505 OPS665 OPS666 OPS667
Contextual Info: OPTEK Product Bulletin OPS665 July 1996 LED and Photosensor Pair Types OPS665, OPS666, OPS667 Features Storage and Operating T e m pe ratu re. -40° C to +100° C Lead Soldering Temperature [1/16 inch 1.6 mm from case for 5 sec. with soldering