0003510 Search Results

Contextual Info: SA NY O SEMICONDUCTOR CORP 1SE D | 7iT?G 7 t. 0003510 1 T - 7 3 'S 3 LA6393M Monolithic Linear 1C 3032B High-Performance Dual Comparator 11C3B The LA6393M is a high-performance dual comparator that is capable of operating from a single power supply over a

Contextual Info: SANYO SEMICONDUCTOR CORP 12 E D I LA5000 Series 7EH7Q7fc, 0003510 'TsS'i/-i3 M onolithic Linear 1C 302 7 A Low -Saturation Voltage Regulator .; U87P, The LA5002, 5003, 500*1, 5005, 5006, 5008, 5009, 5010 are voltage regulators having a small input-output voltage drop 0.2V typ. . They are especially

Contextual Info: 1SE D P O W E R E X INC • 72T4b21 QG035G7 4 ■ fOMERSr C D 72 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Current Source Inverter POW-R-BLOK Modules

current mirrors wilson

Abstract: 8E-15 2N3906 EP2015ACN EP2015C EP2015CM EP2015CN MPQ3906 TPQ3906 PNP Monolithic Transistor Pair
Contextual Info: EP2015C/EP2015AC HIGH PERFORMANCE ANALOG INTEGRATED ClRCunS FastQuad PNP Array F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides A.C. performance

Contextual Info: 15,4 Date Code Ident-Nr. ERNI 3 -0,1 13,45 -0,1 Firmensignet 223013 XXXXXXX EE Zone für durchkontaktierte Löcher ø 0.6±0.05 2 2 compliant zone for thru hole ø 0.6±0.05 10 x 2 = 4x2= 20 1 11 a 11.2 Level 3 Ebene - z Ebene - Level 2 b 8.2 9.7 d +0.2 +0.2

Defense Electronics Supply Center

Abstract: 5962-8998101X
Contextual Info: REVISIONS LTR DATE DESCRIPTION APPROVED YR-HO-DA Change input to output voltage differential in 1.3, 1.4, VREE, 'Orline' an<* delta 1Ani conditions. Change I. test Tinits for conditions CVIN - Vol|T> = 2.5 V from 0.05 A to 0.075 A. Add case outline Y (TO-39).

90lv

Contextual Info: + Semiconductor DS90LV031 A General Description Features The DS90LV031A is a quad C M O S differential line d rive r d e ­ signed fo r applications requiring ultra low pow er dissipation and high data rates. Th e device is d esigned to support data rates in excess o t4 0 0 M bps 200 MHz utilizing Low Voltage

UPS APC

Abstract: UPS APC CIRCUIT MIL-R-83401 POWER SUPPLY BOARD 94V0 5W resistor 10 ohms
Contextual Info: M ODEL NEW PRODUCT BPC SERIES Non-Inductive Planar Thick Film Pow er Resistor N etwork STAN D AR D TYPES BPC 3 3 Watts, Nominal BPC 5 5 Watts, Nominal BPC 7 7.5 Watts, Nominal BPC 10 10 Watts, Nominal ELECTRICAL Resistance Range, Ohms BPC 3, BPC 5, BPC 7:1 to 200K, BPC 10: 3 to 200K

Contextual Info: 15,4 Date Code Ident-Nr. ERNI 3 -0,1 13,45 -0,1 Firmensignet 853010 XXXXXXX EE Zone für durchkontaktierte Löcher ø 0.6±0.05 2 2 compliant zone for thru hole ø 0.6±0.05 10 x 2 = 4x2= 20 1 11 a 11.2 Level 3 Ebene - z Ebene - Level 2 b 8.2 9.7 d +0.2 +0.2

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY" TO B EL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF B EL FUSE INC. RoHS 2002/95/EC ELECTRICAL CHARACTERISTICS 8 25' C 15' P 2 -P 3 (P 4 -P 5 ) (P 7 -P 8 )

CBC 337

Abstract: AM9568 CA20C03A CA95C18 CA95C68 RBG1210 dcp 4 z CA20C03A-10 CA20C03A-5 CA20C03W-5
Contextual Info: CA20C03A & CA20C03W NEWBRIDGE DES ENCRYPTION PROCESSORS MICROSYSTEMS • The CA20C03A is an improved version o f the DES encryption processor designed by Newbridge Microsystems, while the CA20C03W is the Western Digital WD20C03A silicon sold and supported exclusively by Newbridge

Contextual Info: 53D _ Î1 UNITED I c h em i- c o n I f_ Large Tubulars Axial Leads High Capacitance Ratings +85°C General Purpose The 53D series capacitors are available with a standard PVC sleeve and an optional solvent proof epoxy end-seal, required for exposure to halogenated cleaning solvents. Refer to the M ini-Glossary

Contextual Info: CA20C03A & CA20C03W NEWBRIDGE DES ENCRYPTION PROCESSORS MICROSYSTEMS • The CA20C03A is an improved version o f the DES encryption processor designed by Newbridge Microsystems, while the CA20C03W is the Western Digital WD20C03A silicon sold and supported exclusively by Newbridge

Contextual Info: COBRA Device Constant Bit Rate ATM Adaptation Layer 1 TXC-05427B DATA SHEET FEATURES = nFsrm PTinN — - = COBRA C onstant Bit Bate ATM Adaptation Layer 1 is a four-channel VLSI device that implements all of the functions needed for circuit emulation over ATM. Both

pwm hho

Abstract: pwm for hho Brushless DC motor speed control using 555 timer DC motor speed control using 555 timer motor Speed Sensor circuit diagram using 555 timer ic IC 555 timer motor control PWM USING IC 556 TIMER IC 555 control motor brushless PWM USING IC 555 TIMER dc motor control DC motor speed control using 555
Contextual Info: CS-5143 Brushless DC Motor Driver/Controller with back-emf sensing D escrip tion The CS-5143 is a back em f sensing, brushless DC M otor D river/ Controller IC. An onboard transconductance am plifier and tach circuitry control m otor speed. Back em f induced by the m otor in

Contextual Info: M O S E L ViTEUC V104J8 256K C M O S MEMORY M ODULE Features Description • ■ ■ ■ ■ ■ The V104J8 Memory Module is organized as 2 62,144 x 8 bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. Decoupling capacitors, mounted

Contextual Info: MX23C8100 MXIC 8M-Bit Mask ROM 8/16 Bit Output FEATURES ORDER INFORMATION Part No. Access Time Package MX23C8100MC-10 100ns 44 pin SOP MX23C8100MC-12 120ns 44 pin SOP MX23C8100MC-15 150ns 44 pin SOP MX23C8100PC-10 100ns 42 pin DIP Standby: 50nA MX23C8100PC-12

S/07102GOA

Abstract: 156-06
Contextual Info: Silicon Controlled Rectifier Series 071 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes TO-83 (TO-94) Note 1: 1/2-20 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: To specify package designation other than standard lead enter appropriate letter In place of "A*.

GM71C4256-10

Contextual Info: GOLDSTAR TECHNOLOGY INC/ 34E D _ 19 MÜ2Û757 GQD3E1S T «GST PRODUCT SPECIFICATION GM71C4256 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM _ T -V 6 -2 3 -/7 Description Pin Configuration The GM71C4256 is the new generation dynamic RAM organized 262,144 x 4 Bit. The GM71C4256 utilizes

Contextual Info: uncu L10C11 DEVICES INCORPORATED FEATURES □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ □ □ □ □ □ Low Power CMOS Technology Replaces TRW/RaytheonTMC2011 Load, Shift, and Hold Instructions Separate Data In and Data Out Pins

ADG508FBRUZ

Abstract: ADG508FBRWZ S7 300 ADG508F ADG509F ADG528F N-16 ADG508FBNZ ADG509FBRN REV E D00035
Contextual Info: 4-Channel/8-Channel Fault-Protected Analog Multiplexers ADG508F/ADG509F/ADG528F FEATURES FUNCTIONAL BLOCK DIAGRAMS Low on resistance 300 Ω typical Fast switching times tON 250 ns maximum tOFF 250 ns maximum Low power dissipation (3.3 mW maximum) Fault and overvoltage protection (−40 V to +55 V)

DS121S

Abstract: DS1215
Contextual Info: DALLAS SEMICONDUCTOR CORP hWiW^in BTE D SblMlBD K ll^ ,1 •L■' QQ03SQÔ 7 ODAL DS1215 Ï d.îJ 'T - S 2 .- 3 3 > - clO D S 1 2 1 5 /S Phantom Time Chip SEMICONDUCTOR fSWfP^P«1 L - i , i • figr^HiT' iT*l; PIN DESCRIPTION FEATURES • Keeps track of hundredths of seconds, sec­

ADG508FBRWZ

Abstract: ADG508F ADG509F ADG528F N-16
Contextual Info: 4-Channel/8-Channel Fault-Protected Analog Multiplexers ADG508F/ADG509F/ADG528F FEATURES FUNCTIONAL BLOCK DIAGRAMS Low on resistance 300 Ω typical Fast switching times tON 250 ns maximum tOFF 250 ns maximum Low power dissipation (3.3 mW maximum) Fault and overvoltage protection (−40 V to +55 V)

HZK 219

Abstract: HA 16 Sti S.B 1-16 PM7323 SDr31 SCR 131- 6 WJ 59
Contextual Info: • " 1 ^ — ISSUE 1 PMC-Sierra, Inc. PM7323 RCMP-200 ROUTING CONTROL, MONITORING AND POUCING 200 Mbps FEATURES • Monolithic single chip device which handles ATM switch Ingress VPI/VCI address translation, cell appending, cell rate policing, counting, and OAM requirements