00035T Search Results

MB81C78

Abstract: MB81C78-45 MB81C78-55
Contextual Info: FUJ ITSU MICROELECTRONICS 76 dI J 37»H7ha 00035t,T T 3749762 FUJITSU MICROELECTRONICS 78C 03269 F U JIT S U MOS M em o ries M B 8 1 C 7 8 -4 5 , M B 81C 78-55 CMOS 65,536-Bit Static Random Access Memory Description The FujUau MB81C78 Is a 8,192 word x 8-bit static random access

sc1007

Abstract: dt6167
Contextual Info: INTEGRATED DEVICE 14E D • 4Ö25771 00035tb 4 ■ IDT 6167SA IDT 6167LA CMOS STATIC RAM 16K 16K x 1-BIT TW6-23-05 FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT's high-performance, hlghreiiabllity tech nolog y-C E M O S . This state-of-the-art technology,

kbu808 Rectifier

Abstract: KBU808 KBU810 KBU8005 KBU801 KBU802 KBU804 KBU806
Contextual Info: KBU8005 Thru KBU810 8 AMP SILICON BRIDGE RECTIFIER • FEATURES H Outline Drawing • Ideal for printed circuit board • Surge overload rating to 300 Amperes peak • Reliable low cost construction utilizing molded plastic technique • UL recognized: F ile #E 10 6441

prx thyristor

Abstract: CD431060 BP107 CD43 CD430260 CD430860 CD431260 marking WDC sot89 scr 7214F
Contextual Info: POÙJEREX INC 1SE D • ?2TMbai OOQaSÛT T ■ ßOWEHEX C D 43 Powerex, Inc., HHIIs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 ~T~3.5-d ^3 60 SCR POW-R-BLOK Module

7801301XX

Abstract: ELH0002 MIL-I-45208A QCX0002 QCX9002 7801301 ELH0002/EL
Contextual Info: i W W HIGH PERFORMANCE ANALOG INTEGRATED CIBCtirrS Features • • • • • • • • • 400 mA pulsed output current DC to 30 MHz bandwidth 200 V// j.s slew rate Low harmonic distortion High input impedance—400 kil Low output impedance—6fl High power efficiency

68hc11a1

Abstract: MT02B 5962-90510 TS68HC11A1MC CQFP52
Contextual Info: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68HC11A1 HCMOS 8-BIT MICROCONTROLLER UNIT DESCRIPTION The TS 68HC11A1 high density CMOS HCMOS m icrocon­ troller unit (MCU) contains highly sophisticated on*chip peri­ pheral capabilities. This high-speed and low-power MCU

Contextual Info: KBU8005 Thru KBU810 8 AMP SILICON BRIDGE RECTIFIER I FEATURES • Ideal for printed circuit board • Surge overload rating to 300 Amperes peak • Reliable low cost construction utilizing molded plastic technique • UL recognized: File #E106441 • UL recognized 94V-0 plastic material

DW 01k

Abstract: scr prx BP107 CD4A1260 CD4A1460 CD4A1660 CR02AM CR03AM SV430 powerex pow-r-blok
Contextual Info: POUEREX m INC u a 1SE ie D • 7ST4t.51 0 0 D 3 S T S _ x Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 75697 412 925-7272 Powerex Europe, S.A., 428AvenueG. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 S ■ CD4A 60

Contextual Info: XICOR INC S2E D ^ 4 1 7 4 3 DDD32ÔS D34 m x I C Kax Advance Information X20C04 4K 5 1 2 x 8 Bit Nonvolatile Static RAM 1 ^ 4 0 - aS-31 FEATURES DESCRIPTION • High Reliability — Endurance: 1,000,000 Store Operations — Retention: 100 Years Minimum • Power-on Recall

Contextual Info: IB M 1 1 D 2 3 2 0 H 2M x 32 DRAM Module Features • 72-Pin Single-ln-Une Memory Module Low current consumption • Performance: All inputs & outputs are fully TTL & C M O S compatible -60 ; W c : RAS Access Time tcAC CAS Access Time i -70 60ns i 70ns Fast Page Mode access cycle