000377B Search Results
000377B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 51E 5 • Ôl3bb71 000377b 070 M S E K G seMIKRDN SEfäKRÖN- INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A , Vbe = - 2 V > CM I II UJ CD > VcBO Ie = lc Units 1200 V 1200 V 1200 V I VcEV Values 7 V lc D. C. 300 A If = - lc D. C. 300 A V ebo = Ib Ptot |
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l3bb71 000377b 111iii! fll3bb71 T-33-35 | |
MQ02
Abstract: cga to vga 6845 crt controller imsg171 HGC hercules 6845 8bit vga controller CL-GD610 crt controller 6845 gd510 cga to vga circuits
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213bb3T 000377b CL-GD610/620-C 19-resolution 16-blt CL-GD610 -32QC-C GD620 MQ02 cga to vga 6845 crt controller imsg171 HGC hercules 6845 8bit vga controller crt controller 6845 gd510 cga to vga circuits | |
Contextual Info: IBM11D4325B IBM11D8325B 4M/8M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 tRAC I RAS Access Time 60ns 70ns tcAC ! CAS Access Time 15ns 2 0 W ¡Access Time From Address 30ns 35ns tRC ¡CycleTime |
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IBM11D4325B IBM11D8325B 72-Pin 104ns 124ns 000377b 26H3207 26H3208) | |
Contextual Info: H Y 6 2 V 8 1 0 0 A S e r ie s 128Kx8-blt CMOS SRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that |
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128Kx8-blt HY62V8100A 55/70/85/100ns 100/120/150/200ns 1DD04-11-MAY94 GG3773 HY62V8100ALP | |
MMI67401Contextual Info: INTEGRATED DEVICE il!!*# IntegratedDeviceTèchndogy,Inc 14E D 4Ô55771 00Ü377S 3 ^ C M O S PARALLEL FIFO 64 x 4-B IT AND 64 x 5-B IT . : • FEATURES: • First-ln/Flrst-Out dual-port memory • 64 x 4 organization IDT72401/03) • 64 x 5 organization (IDT72402/04) |
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IDT72401/03) IDT72402/04) IDT72401/02 MMI67401/02 175mW shift-rate--45MHz 35MHz IDT72403/04 IDT72401/02/03/04 MIL-STD-883, MMI67401 | |
2M2222A
Abstract: pj 1349 fxp ERI - 35 - 2 YE 0515 TRANSFORMER 2m2222 cmps a42 transistor TTL 74LSxx dg 2n60 diode cross reference PJ32 fj series capacitor 3uF 600V STB523
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2991A 2M2222A pj 1349 fxp ERI - 35 - 2 YE 0515 TRANSFORMER 2m2222 cmps a42 transistor TTL 74LSxx dg 2n60 diode cross reference PJ32 fj series capacitor 3uF 600V STB523 | |
csr bc4Contextual Info: MOSEL VITELIC PRELIMINARY V408J232 2M x 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • 2,097,152 x 32 bit organization ■ Utilizes High Performance 1M x 4 C M O S DRAMs ■ Fast access times: 45, 50 or 60 ns ■ Fast Page mode with Extended D ata Out |
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V408J232 72-lead V408J232 b353311 00G37Ã csr bc4 |