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Contextual Info: » ADVANCE MICRON • 4 MEG SEMICONDUCTOR MC X MT10D440 40 DRAM MODULE 4 MEG X 40 DRAM DRAM MODULE FAST PAGE MODE FEATURES Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% power supply All device pins TTL-compatible	OCR Scan	MT10D440 72-pin 048-cycle 096-cycle DE-17) MT10D440G WIT10D440 MT100440 00115b4	PDF
4218160 Abstract: NEC 4218160 nec A2C UPD42S18160 Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /tPD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.	OCR Scan	uPD42S18160 16-BIT, /tPD42S18160, /xPD42S18160 50-pin 42-pin iPD42S18160-60, iPD42S18160-70, VP15-207-2 M27S25 4218160 NEC 4218160 nec A2C	PDF

Catalog Datasheet

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Contextual Info: » ADVANCE MICRON • 4 MEG SEMICONDUCTOR MC X MT10D440 40 DRAM MODULE 4 MEG X 40 DRAM DRAM MODULE FAST PAGE MODE FEATURES Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% power supply All device pins TTL-compatible

OCR Scan

MT10D440 72-pin 048-cycle 096-cycle DE-17) MT10D440G WIT10D440 MT100440 00115b4

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4218160

Abstract: NEC 4218160 nec A2C UPD42S18160
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /tPD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

OCR Scan

uPD42S18160 16-BIT, /tPD42S18160, /xPD42S18160 50-pin 42-pin iPD42S18160-60, iPD42S18160-70, VP15-207-2 M27S25 4218160 NEC 4218160 nec A2C

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