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    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor b b 53T 31 0014fi3 b 2 BUZ311 : 3,_ „ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF 0014fi3 BUZ311 T0218AA; T-39-11