00225B Search Results

Contextual Info: M IT SU BISH I MICROCOM PUTERS M 37 7 10 S 4B F P 16-BIT CM OS M ICRO C O M PU TER DESCRIPTION The M37710S4BFP is a microcomputer designed with highperformance CM O S silicon gate technology. This is housed in a 80-pin plastic molded QFP. This microcomputer has a

Contextual Info: S -29801 CMOS 768-bit bit sequential E2PROM T h e S-29801 is a 7 68 -b it sequential E 2 P R 0 M with internal address counter. A ddress input is the sequential increm ent system by CLK pin, and output is serial. C urrent consum ption is greatly red uced by

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 6.4 GHz to 7.2 GHz

Contextual Info: BA 7181 FS The BA7181FS is a PRE/REC amplifier developed for use in video cassette recorders. It has been designed for use in two-head decks and features built-in FB damping, two preamplifiers, a chroma output amplifier, an FM output amplifier with AGC , an envelope detector, a constant-current BTL-drive REC amplifier (with AGC) and built-in channel and

Contextual Info: BA7180AS/BA7180AFS PRE/REC 2-channel PRE/REC amplifier with auto-tracking interface amplifiers Video ICs The BA7180AS and B A 7180A FS areP R E /R E C am p lifiersd evelop ed for use in video cassette recorders. They ha­ amplifier, an FM output amplifier with AGC , an envelope detector, a constant-current BTL-drive REC amplifier

Contextual Info: Preliminary KMM5362205BW/BWG DRAM MODULE KMM5362205BW/BWG Fast Page Mode with Extended Data Out 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362205BW is a 2M bit x 36 Dynamic RAM high density memory module. The

Contextual Info: CS5180 AZ Modulator & 8 kHz to 400 kHz 16-Bit ADC Features Description • 16-Bit Delta-Sigm a A /D Converter CS5180 is a fully calibrated high-speed A L analog-todigital converter, capable of 400 kSamples/second out­ put word rate OWR . The OWR scales with the master

Contextual Info: SDP8476-201 Low Light Rejection Phototransistor FEATURES . Side-looking plastic package • Low light level immunity • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF DESCRIPTION

Contextual Info: Data Sheet September 1995 microelectronics group Lucent Technologies Bell Labs Innovations Features • A highly integrated four-repeater architecture will sim­ plify the design of a wide range of N-port by M-segment circuit-switched hubs. The ATT1RX04 places no restrictions on the values of N and M mak­

Contextual Info: CMOS STATIC RAM 1 MEG 256K x 4-BIT IDT71028 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CM O S static RAM • Equal access and cycle times — Commercial: 12/15/17/20ns • One Chip Select plus one Output Enable pin

Contextual Info: Ordering number : EN5724 Monolithic Linear 1C LA1780M SAU m i Single-Chip Tuner IC for Car Radios Overview — Superlative listenability due to improved medium and The LA1780M integrates all six blocks required in a car radio tuner on a single chip. The LA1780M is based on

epoch t14

Contextual Info: GEC PLESSEY S ë f e b r u a r y i 994 S E M I C O N D U C T O R S DS3605-2.2 GP1020 SIX-CHANNEL PARALLEL CORRELATOR CIRCUIT FOR GPS OR GLONASS RECEIVERS The GP1020 is a six-channel CMOS digital correlator which has been designed to work with the GP1010 L1 -channel downconverteror other integrated circuits, and maybe used to acquire

Contextual Info: TOSHIBA MICROW AVE POWER GaAs FET TIM6472-8 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 6.4 G H z to 7.2 G H z • High gain - G 1dB = 7.0 d B at 6.4 G Hz to 7.2 G H z • Broad band internally matched • Hermetically sealed package