BN301
Abstract: ara3
Text: C INTERFACE INC IDE D | 00233A3 0D0045M A | BN301 ^ Iam ey. T - W - U STANLEY INFRARED LED i Package Dimensions • FEATURES 1 High emission output (Typ. 7mW /sr at I f = 20m A ) (2) High directivity type (3) Low cost, High efficient by use o f clear epoxy package o f lens dia 5 mm
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00233A3
0D0045M
BN301
100ms
T-41-11
BN301
ara3
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FD-511
Abstract: FC-101
Text: A C INTERFACE INC IDE D | 00233A3 OOODSOfl 3 | _ _ siamexi F[?;5A1 STANLEY PHOTO DARLINGTONTRANSISTOR • FEATURES 1 High accuracy by use o f special resin package w ith centred chip (2) High photo current (Typ. 5 m A at Ee = 0.1m W /cm 2 ) (3) High current transmission ratio is achieved
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00233fl3
FD-511
FC-101
FC-101
D0S33Ã
FD-511
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photoswitch
Abstract: N305
Text: A C interface INC IDE D | 00233A3 00DD41S 7 | _ - j N ia m e y . | AN305 \ • T-fl-H , STANLEY INFRARED LED unit:mm±o.2> ■ P ackage Dim ensions ■FEA TU RES (1 H igh radiant p o w e r G a A s typ e (Po = 8 m W T Y P .) (2) 9 5 0 n m peak w avelength
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000041S
950nm
18deg.
25mW/sr)
0D533fl3
0DGG417
lF-50mA
S1/100
T-41-1
50roA)
photoswitch
N305
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photo-electric switch
Abstract: BN301 T-41-11
Text: C INTERFACE INC IDE D | 00233A3 0D0045M A | BN 3 01 ^ Iam ey. T'W'H STANLEY INFRARED LED i Package Dimensions • FEATURES 1 High emission output (Typ. 7mW /sr at I f = 20m A ) (2) High directivity type (3) Low cost, High efficient by use o f clear epoxy package o f lens dia 5 mm
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OCR Scan
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00233A3
0D0045M
BN301
Q00Q4E
100ms
T-41-11
photo-electric switch
BN301
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hiif2
Abstract: SPG7851REC SPY7851REC
Text: A C INTERFACE INC IDE D | 0023303 0000245 2 | £ îâ m e y . STANLEY SUPER BRIGHT LED LAMP RECTANGLE TYPE 2 .4 X 7 .2mm TYPE SERIES ISELECTION GUIDE M ATERIAL COLOR ' PART N U M B E R GaAIAs SBR 7 8 4 1 REC, 7 8 5 1 REC GaP SPR 7 8 4 1 R E C ,7 8 5 1 REC
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7841REC,
7851REC
7841REC
hiif2
SPG7851REC
SPY7851REC
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FC101
Abstract: No abstract text available
Text: C INTERFACE INC IDE D | QGE3BÔ3 00[]04a4 4 | N '• ia m e y • STANLEY PHOTO TRANSISTOR ■ Package Dimensions ~ • •- FS-511 : I ■ '4 ^ 1 ■ FEATURES (1 High accuracy by use of special resin package with central chip (2) High photo current {Typ. 2.5m A at Ee = 10mW/cm2 )
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FS-511
10mW/cm2)
FC-101
FS-51!
FC101
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photo transistor
Abstract: FS-511 FC-101 photo transistor high current
Text: C INTERFACE INC IDE D | 0023303 0000404 ^ ÏÂ ^ mey ^ | ~ FS-511 STANLEY PHOTO TRANSISTOR • Package Dimensions ■ FEATURES 1 High accuracy by use of special resin package with central chip (2) High photo current (Typ. 2.5m A at Ee = 10mW/cm2 ) (3) Fast response permits fast transmission
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FS-511
10mW/cm2)
FC-101
FC-101
photo transistor
FS-511
photo transistor high current
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