0025T Search Results

"Reed Switch"

Contextual Info: PIC GmbH • Nibelungenstr. 5A 90530 Wendelstein, Germany Phone +49 911 99 59 06-0 Fax +49 911 99 59 06-99 info@pic-gmbh.com • www.pic-gmbh.com HSR-0025TSM Pb RoHS Micro SMD Reed Switch Lead free Electrical Characteristics Contact form Contact material Contact rating max.

Contextual Info: KEMET Part Number: T252C227K010MS7200 T252C227K010MS7200, M39003/06-0025TR, CSR33C227KM7200 Capacitor, tantalum, 220 uF, +/-10% Tol, 10V@85C General Information Manufacturer: KEMET Electrical Specifications Value: 10V Voltage DC @ 125C: 6.3V Tolerance: Application:

Contextual Info: HSR-0025TSM S W I T C HI N G T HE S M A R T WAY HSR-0025TSM Micro SMD Reed Switch Electrical Characteristics @ 25 °C Contact form Features A Contact material World´s smallest SMD Reed Switch Durel Contact rating max. Switching voltage max. W / VA 0.25 VDC

Contextual Info: PIC GmbH • Nibelungenstr. 5A 90530 Wendelstein, Germany Phone +49 911 99 59 06-0 Fax +49 0911 99 59 06-99 info@pic-gmbh.com • www.pic-gmbh.com HSR-0025TSM RoHS Mikro-SMD-Reedschalter Pb Bleifrei Elektrische Daten Kontaktform Kontaktmaterial Schaltleistung max.

Contextual Info: HSR-0025TSM S W I T C HI N G T HE S M A R T WAY HSR-0025TSM Mikro-SMD-Reedschalter Elektrische Daten @ 25 °C Kontaktform Features A Kontaktmaterial Weltkleinster SMD-Reedschalter Durel Schaltleistung max. Schaltspannung max. W / VA 0,25 VDC 30 VAC 30 Schaltstrom max.

THM3620C0A

Contextual Info: TOSHIBA THM3620C0AS/ASG -70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3620C0A is a 2,097,152 words by 36 bit dynamic RAM module which is assembled with 4 TC5118180AJ devices on the printed circuit board. This module can be as well used as 4,193,304 word by 18

PMSS3904 Philips SOT323

Abstract: transistor p04 p04 transistor PMSS3904 MARKING CODE D4t
Contextual Info: b b S 3 * î3 1 Philips Semiconductors □ □ 2 5 CJ2E 2 7 7 H A P X N AMER PHILIPS/DISCRETE NPN general purpose transistor FE A T U R E S Product specification b?E D PMSS3904 P IN C O N F IG U R A T IO N • S-m ini package. D E S C R IP T IO N N P N transistor in a plastic S O T 3 2 3

99C68-35

Contextual Info: ADV MICRO {MEMORY} D Ê | 025752Û OOESbOb H n Am99C68/Am99CL68 4096 x 4 CMOS Static R /W Random-Access Memory 0 2 5 7 5 2 8 ADV MICRO <MEMORY 89D 25606 D T-46-23-08 > 3 DISTINCTIVE CHARACTERISTICS - Standby: High speed — access times as fast as 35 ns Fully static storage and interface circuitry

Contextual Info: NEC N E C ELECTRONICS INC 3DE D • fci427SE5 0 0 2 5 3 1 4 3 ■ pPD7530x/31x/P308/P316 4-Bit Microcomputers With LCD Control ier/Driver NEC Electronics Inc. r- v t- n - w r - ‘+*1 - 1*1 '£-*i Description The pPD7530x/31x is a family of high-performance

Contextual Info: ASSP BIDIRECTIONAL MOTOR DRIVER MB3763 • DESCRIPTION Fujitsu’s MB3763 Motor Driver with forward/reverse control capability, is used in applications such as the frontloading mechanism in video tape, or the auto-reverse tape deck, driven by a TTL signal. The MB3763 has 300

Contextual Info: ADE-203-186A Z i HM5241605 Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM H IT A C H I All inputs and outputs are referred to the rising edge of the clock input. The HMS241605 is offered in 2 banks for improved performance. 3.3 V Power supply

48MHZ

Abstract: PI6C100 PI6C100V PI6C180
Contextual Info: PR ELIM INA R Y PRELIM f j j P E R IC O M PI6C100 M i l l I II I M i l l I I I I I I I I I I I I I I I I n i l M i l l I II I M i l l I I I I I I I I I I I I I I I I M i l l I II I I I I I I I I I I I I I M i l l I I I I n i l M i l l I II I M i l l I I I I I I I I I I I I I I I I M i l l

Contextual Info: MITSUBISHI LS Is M5M5179AP,J,FP-20,-25, -20L-25L 73728-BIT 8192-WORD BY 9-BIT CMOS STATIC RAM DESCRIPTION This is a fam ily o f 8 1 9 2 -w o rd by 9 -b it static RAM s, PIN CONFIGURATION (TOP VIEW) •fabricated w ith the high-performance CMOS silicon-gate MOS

A3TE

Abstract: TCFT 1103 TC514260BFT A357 TC514260BJ-70 equivalent 514260 TC514273 TC514273BJ80 HDC3 TC514260BJ
Contextual Info: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

Contextual Info: • ^ 53^31 □□25hfll 0b2 ■ APX N APIER PHILIPS/DISCRETE BT148W SERIES b?E D J v THYRISTORS Glass-passivated, sensitive-gate thyristors in SOT-223 plastic envelopes suitable fo r surface mounting. They are intended fo r general purpose switching and phase-control applications.

Contextual Info: PRELIMINARY MULTIMEDIA VIDEO K S 0116 GENLOCK DIGITIZER The KS01Î6 is a complete single chip genlock digitizer tor NTSC video input. Using SAMSUNG’S advanced CMOS technology thé KS0116 GENLOCK implements standard analog functions associated with the front end

transistor p2a

Abstract: PXT3906 transistor marking CS philips 1967
Contextual Info: •I bbSB^Bl □D2Stì7b 4MÛ H A P X N AMER PHILIPS/DISCRETE PXT3906 b7E T> SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a SOT-89 envelope prim arily intended fo r high-speed, saturated switching applications fo r industrial service. QUICK REFERENCE D A T A

Contextual Info: SPRAGUE WET AND FOIL TANTALUM CAPACITORS TY P E 138D Herm etically-Sealed, Gelled-Electrolyte Sintered Anode TANTALEx@Capacitors w ith True G lass-to-Tantalum Seal J MPROVED RELIABILITY through the use of a glass-to-tantalum true hermetic anode seal is the prime feature of the Type 138D gelled-electrolyte sintered anode Tantalex capacitor. This con­

TC514170BJ-80

Abstract: TC514170 TC514170BJ80 TC514170BJ70 TC514170BJ-70 tc514170b
Contextual Info: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques

Contextual Info: FUJITSU SEM ICO NDUCTO R DATA SHEET D S 0 5 -1 0 1 4 2 -4 E MEMORY CMOS 4 M x 1 BIT FAST PAGE MODE DRAM MB814100A-60/-70/-80 CMOS 4,194,304 x 1 bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB814100A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 4,194,304

CGA10

Contextual Info: G E SOLID STATE 17E D 3075001 OGSSTa? 4 • 'T Application Specific iCs ’- M T . - U ~ 0 °\ CGA10 Series Advance Information Continuous Gate* Technology 2-Micron CMOS Gate-Array Series Features: ■ C ontinuous Gafe architecture offers m axim um la yo u t

M37221

Contextual Info: MITSUBISHI MICROCOMPUTERS M37221 EF-XXXSP,M37221 EFSP SIN G LE-C H IP 8-BIT CM OS M ICRO CO M PUTER for VOLTAGE S Y N T H E S IZ E R with O N -SC REEN D ISPLA Y C O N T R O LLER DESCRIPTION The M 37221EF-XXXSP and M37221 E F S P are single-chip microcom­

Contextual Info: P1480 LAN CAM CHAPTER 1 INTRODUCTION 1.1 GENERAL DESCRIPTION The P1480 LAN CAM is a 1K x 64-bit Content-addressable Memory CAM which is targeted at address filtering applications in Local Area Network (LAN) Bridges. Although some of the aspects of this device are tuned specifically to

Contextual Info: GEC PLESSEY w , ADVANCE INFORMATION S E M I C O N D U C T O R S D.S. 3534 2.0 SL3522 500MHz 75dB LOGARITHMIC / LIMITING AMPLIFIER Supersedes Edition in Professional Products 1C Handbook M ay 1991 The SL3522 is a monolithic seven stage successive detection logarithm ic a m plifier integrated circuit fo r use in the