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EW Electronics SGC3S100NM CAP TRIMMER 3-10PF 100V SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SGC3S100NM	Digi-Reel	16,215		1	1 $1.51 10 $1.149 100 $0.8827 1000 $0.74016 10000 $0.74016	Buy Now
	SGC3S100NM	Cut Tape	16,215		1	1 $1.51 10 $1.149 100 $0.8827 1000 $0.74016 10000 $0.74016	Buy Now
	SGC3S100NM	Reel	16,000		1,000	1 - 10 - 100 - 1000 $0.68798 10000 $0.54741	Buy Now
Abracon Corporation AMSLA-1050-100NM-T IND 0.1UH 50A 0.42M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AMSLA-1050-100NM-T	Cut Tape	1,950		1	1 $0.87 10 $0.676 100 $0.5167 1000 $0.43976 10000 $0.43976	Buy Now
	AMSLA-1050-100NM-T	Digi-Reel	1,950		1	1 $0.87 10 $0.676 100 $0.5167 1000 $0.43976 10000 $0.43976	Buy Now
	AMSLA-1050-100NM-T	Reel	1,000		1,000	1 - 10 - 100 - 1000 $0.34472 10000 $0.325	Buy Now
Avnet Americas	AMSLA-1050-100NM-T	Reel		16 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.323	Buy Now
Mouser Electronics	AMSLA-1050-100NM-T		1,900			1 $0.86 10 $0.567 100 $0.473 1000 $0.333 10000 $0.325	Buy Now
Newark	AMSLA-1050-100NM-T	Cut Tape	997		1	1 $0.96 10 $0.656 100 $0.557 1000 $0.524 10000 $0.524	Buy Now
Onlinecomponents.com	AMSLA-1050-100NM-T					1 - 10 - 100 - 1000 - 10000 $0.3227	Buy Now
STMicroelectronics STY100NM60N MOSFET N CH 600V 98A MAX247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STY100NM60N	Tube	600		1	1 $22.25 10 $22.25 100 $17.16867 1000 $17.16867 10000 $17.16867	Buy Now
Mouser Electronics	STY100NM60N					1 - 10 - 100 - 1000 $17.16 10000 $17.16	Get Quote
Newark	STY100NM60N	Bulk			1	1 $28.7 10 $27.18 100 $24.13 1000 $20.05 10000 $20.05	Buy Now
STMicroelectronics	STY100NM60N				1	1 $21.81 10 $21.81 100 $16.83 1000 $16.83 10000 $16.83	Buy Now
Avnet Silica	STY100NM60N		600	17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STY100NM60N			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TE Connectivity CA100-NM-MMCX-12 COAX CBL MMCX TO N-TYPE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CA100-NM-MMCX-12	Box	71		1	1 $14.43 10 $10.272 100 $8.0092 1000 $6.99592 10000 $6.99592	Buy Now
Mouser Electronics	CA100-NM-MMCX-12		29			1 $13.38 10 $10.37 100 $8.08 1000 $6.99 10000 $6.99	Buy Now
Interstate Connecting Components	CA100-NM-MMCX-12					1 - 10 - 100 $7.9811 1000 $7.7464 10000 $7.7464	Buy Now
Avnet Abacus	CA100-NM-MMCX-12			113 Weeks	39	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Sager	CA100-NM-MMCX-12				39	1 - 10 - 100 $9.33 1000 $7.75 10000 $7.53	Buy Now
Cinch Connectivity Solutions CGM-1100-NM-SMF-10 CGM-1100-NM-SMF-10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGM-1100-NM-SMF-10	Box	47		1	1 $22.81 10 $19.978 100 $17.8815 1000 $16.4017 10000 $16.4017	Buy Now
Mouser Electronics	CGM-1100-NM-SMF-10		151			1 $25.98 10 $22.75 100 $20.36 1000 $19.24 10000 $19.24	Buy Now

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100NM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
photodiode Abstract: ODD-470W 470nm ir photodiode wavelength Text: SELECTIVE WAVELENGTH PHOTODIODE: 470nm PEAK WAVELENGTH ODD-470W FEATURES • • • • Peak response at 470nm Spectral bandwidth 100nm Low dark current No optical filters used RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area	Original	PDF	470nm ODD-470W 470nm 100nm 380nm 540nm photodiode ODD-470W ir photodiode wavelength
specifications of scr Abstract: scr specifications 100nM SCR-150 S160D motor WITH scr Text: Nippon Pulse SCR Stage Notes SCR-050 Notes Note 1: Repeatability +/- 2 counts sub 0.1 um @ Resolutions Note 2: For 10nm resolution, max velocity of encoder is limited to 65mm/sec; for 50nm, the limit is 250mm/sec; and for 100nm 0.1 m , the limit is 500mm/sec.	Original	PDF	SCR-050 65mm/sec; 250mm/sec; 100nm 500mm/sec. SCR-075 specifications of scr scr specifications 100nM SCR-150 S160D motor WITH scr
pyroelectric amplifier circuit Abstract: LFP-3950L-337 pyroelectric detector Text: LFP-3950L-337 pyroelectric detector with tunable FPF Description: Pyroelectric IR detector with integrated ø1.9mm micromachined tunable Fabry-Perot filter. Tuning range 3.9 . 4.8µm, spectral bandwidth 100nm, low spring stiffness, pyroelectric element area 2.0x2.0mm²	Original	PDF	LFP-3950L-337 100nm, 100Hz 100GOhm LME-337 lfp-3950l pyroelectric amplifier circuit LFP-3950L-337 pyroelectric detector
ir photodiode wavelength Abstract: ODD-470W 470nm NJM4560 pins 380nm 470N-M Text: SELECTIVE WAVELENGTH PHOTODIODE: 470nm PEAK WAVELENGTH ODD-470W FEATURES • • • • Peak response at 470nm Spectral bandwidth 100nm Low dark current No optical filters used RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area	Original	PDF	470nm ODD-470W 470nm 100nm 380nm 540nm ir photodiode wavelength ODD-470W NJM4560 pins 380nm 470N-M
SAMSUNG MEMORY 2006 Abstract: K1B2816B2A 128MB ADIE Text: UtRAM 128Mb M-die 100nm & A-die(90nm) Comparison Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The Leader in Memory Technology	Original	PDF	128Mb 100nm) K1B2816B2A K1B2816B6M 104Mhz 66Mhz 128Mb SAMSUNG MEMORY 2006 K1B2816B2A ADIE
mcz 300 1bd Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode Text: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION	Original	PDF	128bit Division/e-Busin125 mcz 300 1bd SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
ISO-105-B02 Abstract: No abstract text available Text: 有关本公司产品的注意事项请务必在使用本公司产品目录之前阅读。注意事项 • 本软件中记载的内容是2009年10月现在的内容。本产品目录记载的内容由于产品的改良等原因发生变更时，恕不另行	Original	PDF	1/16x-SPEED 123mm 199mm media0102 ISO-105-B02 ISO-105-B02
IC SEM 2004 Abstract: ED-4701-304 AB-6201 failure rate TDDB JIS-C-7032 ED-4701-102 ED-4701-303 EIAJ AB-6201 Z81151981 HGSM Text: お客様各位資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコンダクタ株式会社に承継されました。従いまして、本資料中には「沖電気工業株	Original	PDF	GL-23 IC SEM 2004 ED-4701-304 AB-6201 failure rate TDDB JIS-C-7032 ED-4701-102 ED-4701-303 EIAJ AB-6201 Z81151981 HGSM
TESA 4965 Abstract: agilent optical encoder 90-electrical-degree AM26LS32 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-6 EN61000-6-2 RS422A Text: Agilent AEDL Series Optical Linear Incremental Encoder Features Description The AEDL Series linear encoders use high technology transmissive optical encoding technique to detect linear motion. There is no mechanical contact between the scanning head and the linear scale, thus	Original	PDF	15-pin 12-pin 5989-2553EN TESA 4965 agilent optical encoder 90-electrical-degree AM26LS32 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-6 EN61000-6-2 RS422A
nir emitter leds with 700 to 900 nm Abstract: ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir Text: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety	Original	PDF	660nm ODD-660W nir emitter leds with 700 to 900 nm ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir
dv4 mosfets Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254 Text: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its	Original	PDF	AN7254 RFM10N15 RFM10N15L. dv4 mosfets C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036
batch failure test data Abstract: Ta2O5 MIL-PRF-55365 P1204 Text: A Study of Field Crystallization in Tantalum Capacitors and its effect on DCL and Reliability T.Zednicek AVX Czech Republic, s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 465 358 126 Fax: +420 465 358 128 Mail: tomas.zednicek@eur.avx.com	Original	PDF	207-282-5111Fx batch failure test data Ta2O5 MIL-PRF-55365 P1204
hamamatsu photomultiplier R300 Abstract: 931A Hamamatsu Hamamatsu r300 6199 photomultiplier R300 pmt hamamatsu pmt R300 RCA 931-A Photomultiplier Tube Hamamatsu photomultiplier RCA 931A photomultiplier R928, hamamatsu Text: CHAPTER 1 INTRODUCTION 2007 HAMAMATSU PHOTONICS K. K. 2 1.1 CHAPTER 1 INTRODUCTION Overview of This Manual The following provides a brief description of each chapter in this technical manual. Chapter 1 Introduction Before starting to describe the main subjects, this chapter explains basic photometric units used to measure	Original	PDF
multilayer lithography ic fabrication Abstract: Jewell Instruments Text: EUV Lithography—The Successor to Optical Lithography? John E. Bjorkholm Advanced Lithography Department, Technology and Manufacturing Group, Santa Clara, CA. Intel Corporation Index words: EUV lithography, lithography, microlithography Abstract This paper discusses the basic concepts and current state	Original	PDF

Untitled Abstract: No abstract text available Text: 2009 年 6 月 30 日实现顶级耐光性能将对应蓝光波长区段的 GL 系列波长板商品化爱普生拓优科梦（Epson Toyocom）公司（总经理：宮澤要）将具备了能够同时对应高功率及高光密度蓝光波长区段的耐光性用于光学拾波器光学系统的高性能 GL 系列	Original	PDF	100nm
SBC102 Abstract: photodiode sharp sbc T4151 SBC541 SBC111 SBC255 A350L 500EX SBC11 Text: S HARP ELEK/ MELEC DIV 1SE D \| fllflG?Ta GQ0E70Û ü l Blue Sensitive Photodiodes • 1. 2. 3. SBC Series ■ F ea tu res Suitable for visible light measurement A wide range of sensitivity wavelength A : 350~l,100nm Wide acceptance A pp licatio n s 1. Illuminance meters	OCR Scan	PDF	100nm) 44mm2 SBC111 314mm2 SBC255 ActiC255) SBC541) 500ex SBC255) SBC102 photodiode sharp sbc T4151 SBC541 SBC111 SBC255 A350L 500EX SBC11
SBC102 Abstract: SBC541 SBC111 Text: SHARP ELEK/ MELEC DIV 1SE D \| fllflG?Ta GQ0E70Û ü l Blue Sensitive Photodiodes • 1. 2. 3. SBC Series ■ Features Suitable for visible light measurement A wide range of sensitivity wavelength A : 350~l,100nm W ide acceptance 1. 2. 3. 134 SHARP A pplications	OCR Scan	PDF	GQ0E70Û 100nm SBC102 SBC111 SBC255 SBC541 9X40V) SBC255) SBC102 SBC111
Untitled Abstract: No abstract text available Text: MS-15 INFRA-RED PHOTOCELL This silicon photocell has been specifically developed for the detection of Infra-red radiation in the wavelength range of 7 5 0 to 1 100nm . Originally used in conjunction with a Helium Neon laser for the simulation of gun-fire in a training target system, the M S 1 5 can be used in a wide range of more	OCR Scan	PDF	MS-15 100nm 750nm
mmic p07 Abstract: hp mmic p07 Text: MICROWAVE GaAs STANDARD FOUNDRY SERVICE 1 - STANDARD FOUNDRY SERVICE 1.1. BASIC FOUNDRY SERVICE T he standard approa ch en ables a single cu sto m er to im ple m en t one or several chip designs o r d e s ig n v a r ia tio n s on a s a m e re tic le an d	OCR Scan	PDF	ldss/100 ldss/100 mmic p07 hp mmic p07
1D225 Abstract: 200 Amp bridge mosfet ptc resistor 300 to 500 e OMS420 OMS420A OMS520 OMS620 L15A diode t25 4 HO Text: OMS420 OMS52Q OMS620 3 PHASE, LOW VOLTAGE, LOW R Ds<on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 200 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES • • • • • • Three Phase Power Switch Configuration	OCR Scan	PDF	OMS420 OMS620 OMS520 100nm 0DG1D47 1D225 200 Amp bridge mosfet ptc resistor 300 to 500 e OMS420A OMS520 L15A diode t25 4 HO
ST E3 0560 Abstract: J 292 ftm 230 CS8125 CS8127 CS8127-IP1 625 660 TG t1537 Text: CRYSTAL SEMICONDUCTOR 3âE: D ES 2S4L.3E4 •^ r o a a a m jL iT r x ,o \ m E z r a ma r a a œ a a& E ^? 00040=14 S E3CYS CS8127 Semiconductor Corporation Light Emitting /Detecting Diode iu3~7 Features General Description • Supports bi-direction communication	OCR Scan	PDF	CS8127 CS8123 CS8124 CS8125 CS8127 applicat400 62BSC 300BSG x45deg 45degkâ ST E3 0560 J 292 ftm 230 CS8127-IP1 625 660 TG t1537
UT-34-SP Abstract: Gigabit Logic 5sh3 Text: TE K T R O N I X INC/ TRI âU I N T SbE » B fl'JOfc.aifl G Q Q Q S R R S H T R Ö 'T'-S Z-ivo 7 Im E iL i G ig a B it L o g ic 16G076 LED Driver 1 G b it/s N R Z D a ta R a te FEATURES >1-150 mA output current • DC-blocked ECL, GaAs PicoLogic compatible	OCR Scan	PDF	16G076 16G076 050P3 0080TOP UT-34-SP Gigabit Logic 5sh3
Untitled Abstract: No abstract text available Text: f f ï H A R R HCTS 10MS I S S E M I C O N D U C T O R Radiation Hardened Triple 3-Input NAND Gate September 1995 Pinouts Features • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14, LEAD FINISH C	OCR Scan	PDF	IL-STD-1835 CDIP2-T14, 00b25fl7 HCTS10MS 05A/cm2 100nm
Untitled Abstract: No abstract text available Text: EPSON PF836-01 SEDI 670 Dot Matrix High Duty LCD Driver • 100 Output • 1/64 to 1/300 in display duty • CMOS High Voltage Resistant Process • OVERVIEW The SED1670 is a 100 output low-power resistance common row driver which is suitable for driving a very high	OCR Scan	PDF	PF836-01 SED1670 SED1640D SED1606D SED1631* SED1635*

100NM Search Results

100NM Price and Stock

EW Electronics SGC3S100NM

Abracon Corporation AMSLA-1050-100NM-T

STMicroelectronics STY100NM60N

TE Connectivity CA100-NM-MMCX-12

Cinch Connectivity Solutions CGM-1100-NM-SMF-10

100NM Datasheets Context Search

photodiode

specifications of scr

pyroelectric amplifier circuit

ir photodiode wavelength

SAMSUNG MEMORY 2006

mcz 300 1bd

ISO-105-B02

IC SEM 2004

TESA 4965

nir emitter leds with 700 to 900 nm

dv4 mosfets

batch failure test data

hamamatsu photomultiplier R300

multilayer lithography ic fabrication

Untitled

SBC102

SBC102

Untitled

mmic p07

1D225

ST E3 0560

UT-34-SP

Untitled

Untitled