002B4FL Search Results

tc51864

Contextual Info: TOSHIBA T C 5 1 8 6 4 P L /F L S 5 /1 0 PRELIM INARY SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The

Contextual Info: M ITSU B ISH I <D IG IT A L ASSP> M 66240P/FP 4-CH 16-B IT PW M GENERATOR DESCRIPTION The M66240 is a programmable channel PWM generator PIN CONFIGURATION TOP VIEW produced using the silicon gate C M O S process. The M66240 can connect directly to the MPU data bus and

BY448

Abstract: BY440 BY458 Philips diode tFR
Contextual Info: N AMER PHI LIPS/DISCRETE bTE D • bbSB^Bl QG2bM75 TTM BY448 BY458 IAPX PARALLEL EFFICIENCY DIODES Double-diffused passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, intended fo r use as efficiency diodes in transistorized horizontal deflection circuits and PPS power-pack system

QP803SL

Abstract: 44t transistor QP804SL
Contextual Info: 0 . OPTEK P roduct B ulletin OP 8 OOSL June 1996 NPN Silicon Phototransistors Types OP8OOSL, QP801SL, OP8Q2SL, QP803SL, QP804SL, OP8Q5SL Features • • • • • Narrow receiving angle Variety of sensitivity ranges Enhanced temperature range TO-18 hermetically sealed package

BY448

Abstract: BY458 af446
Contextual Info: b*lE D N AMER PHILIPS/DISCRETE • ^53131 0021,475 TTM IAPX BY448 BY458 PARALLEL EFFICIENCY DIODES D ouble-diffused passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes, intended fo r use as e ffic ie n c y diodes in transistorized h o rizo n ta l d e fle ctio n c irc u its and PPS power-pack system

Contextual Info: P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM -FEATURES • High Speed Equal Access and Cycle Times — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) ■ Single 5 Volts ±10% Power Supply ■ Easy Memory Expansion Using ÜÊ, CE2 and

Contextual Info: International K Rectifier PD 9.1096A IRF7104 PRELIMINARY HEXFET® Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching