002FLL Search Results

Contextual Info: N AMER PHILIPS/DISCRETE bSE D • L.b53R31 002fllRfl S23 « A P X Objectivespecification Philips Semiconductors NPN general purpose transistor 2PC4081 FE A T U R E S • S-mini package • Low output capacitance, C 0b = 2 p F typ. . DESCRIPTION NPN transistor in a plastic three lead

transistor 2n3053

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbSBTBl 002fll3b Eflb I IAPX 2N30b3 A SILICON PLANAR TRANSISTOR N-P-N transistor in a TO-39 metal envelope designed for medium speed, saturated and non-saturated switching applications for industrial service. QUICK REFERENCE DATA

Contextual Info: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

fll57

Contextual Info: Data Sheet October 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7901 ISA Single Wide Area Connection ISA-SWAC Device Features • One wide area connection port that can be config­ ured as a basic rate ISDN TE or NT or as a syn­

Contextual Info: N AUER PHILIPS/DISCRETE b5E D • bb53531 0DSfl452 171 I IAPX BUV26F BUV26AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bbS3T31 QDEfilbE 37fl 2N 5086 2N 5 087 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5088/2N5089.

Contextual Info: _ _ • TOSHIBA ^0^7240 DD2öb3S 315 T C 5 9 S 1 6 1 6 A F T -1 0 , -1 2 T C 5 9 S 1 6 0 8 A F T -1 0 , -12 T C 5 9 S 1 6 0 4 A F T -1 0 , -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM

Contextual Info: P h ilip s S e m ic o n d u c to rs ^ bb53B31 0038177 STT H IA P X Preliminary specification Silicon planar epitaxial transistor 2N5680 N AUER PHILIPS/DISCRETE bBE D QUICK REFERENCE DATA PARAMETER SYMBOL collector current MIN. MAX. UNIT - V - 120 V - 1 A Tcase < 25 °C

2PA733

Abstract: 2PC945 bt 824
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • ^ 5 3 ^ 3 1 00201Ô5 T7S M A P X A Ü K U y4Ö SILICON SMALL-SIGNAL TRANSISTOR NPN small-signal tran sisto r, in a p la sticT O -9 2 envelope. I t is intended fo r use in audio a m p lifie r d rive r stages and lo w speed sw itching a pplications etc.

U9024N

Abstract: BSS 250 IRFR P-Channel MOSFET
Contextual Info: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2

e 13009 d

Abstract: transistor E 13009 transistor E 13009 l E 13009 2
Contextual Info: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : : C ollector Em itter Voltage:

Contextual Info: MITSUBISHI LSIs M 6M 80041P, FP 4 0 9 6 - B IT 256-W O R D B Y 16-B IT E LEC T R IC A LLY E R A S A B LE AND PROGRAM M ABLE ROM DESCRIPTION The M6M80041P, FP are 4096-bit (256-word x 16-bit) elec­ trically erasable CMOS EEPROM s, and all have a built-in

Contextual Info: TOSHIBA TMP87CC70/H70/K70A/M70A CMOS 8 -BIT MICROCONTROLLER TMP87CC70F, TMP87CH70F, TMP87CK70AF, TMP87CM70AF The 87CC70/H70/K70A/M70A are the high speed and high perform ance 8 -bit single chip microcomputers. These MCU contain 6 -bit A/D conversion inputs and a VFT Vacuum Fluorescent Tube driver on a chip.

IC TA 31101

Abstract: 87CH70
Contextual Info: TOSHIBA TMP87PM70 CMOS 8-BIT MICROCONTROLLER TMP87PM70F The 87 P M 70 is a O n e-T im e PROM m icroco ntroller w ith lo w -p o w e r 256K bits 32K bytes electrically program m able read only m emory f o r th e 87CC70/CH70/CK70A/CM70A system evaluation. The 87PM 70 is pin

Contextual Info: N-CHANNEL POWER MOSFETS IRFZ34/30 FEATURES • Lower R d s On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tem perature reliability