FLL57 Search Results

fll57

Abstract: FLL57MK
Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

0.1 j100

Abstract: FLL57MK fll57
Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

FLL57MK

Abstract: fll57 fujitsu gaas fet L-band fujitsu gaas fet
Contextual Info: FLL57MK _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 36.0dBm Typ. High Gain: = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION

FLL57MK

Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

fll57

Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: hadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

FLL57MK

Abstract: fll57 01 j100
Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

fll57

Contextual Info: Data Sheet October 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7901 ISA Single Wide Area Connection ISA-SWAC Device Features • One wide area connection port that can be config­ ured as a basic rate ISDN TE or NT or as a syn­

FLL55

Abstract: FLL100
Contextual Info: FILTERS LOW PASS L ea b l e s s S urf ac e M o u n t M. o d e l s -. ^ L o w C ose Fc MHz LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140 96 115

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

FLL55

Abstract: FLL100 FLS-330 FLL15 fll57 FLL-770
Contextual Info: FILTERS LOW PASS L e a d í .,e s s S u /tF A C fì-iM o i's r M o n t i ,.v i j w C ost Fc MHz) LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55; 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.