0030B Search Results

Contextual Info: Multilayer Chip Beads BMB-B Series 50 Specification Characteristic Rated DC Resistance Curves Current mA (ohms) See Page maximum maximum. Part Number Impedance (ohms) at 100MHz BMB-1J-0005B-N3 BMB-1J-0017B-N3 BMB-1J-0030B-N3 BMB-1J-0070B-N3 BMB-1J-0100B-N3

100-P

Abstract: BUK456 BUK456-60A BUK456-60B T0220AB dm 369 rv
Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbSBTBl 0030b7D LET • APX Product Specification Philips Semiconductors B U K456-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

SGS40TA045

Contextual Info: 3QE » m 7 eJ2cî 5 3 7 0030b4fi Q • rZZ SCS-THOMSON “ 7# ^DOæULllOïïiOOaflûS t-w s i S G S 4 0 T A 045 S G S- TH O M SO N NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . ADAPTED FOR HIGH POWER SWITCHING

Contextual Info: N AUER PHILIPS/DISCRETE b 'lE D bbS3T31 0030bS5 312 * A P X Product Specification Philips Semiconductors BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AHER PHILIPS/DISCRETE bTE D ^53=531 0030b7D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

philips tv smps

Abstract: BUK454-500B T0220AB
Contextual Info: N AMER PHIL IPS /DISCRETE fc»TE D • fcifc.Sa'm 0030b25 b6S H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

VOICE RECORDER circuits

Abstract: voice recording chip S-5800A CMOS LSI two sound generator opamp manual cpu in construction 256Ki1 S5800A
Contextual Info: _ S-5800A SPEECH RECORDING AND REPRODUCING LSI The S-5800A is a single chip CMOS LSI for recording and reproducing speech. It works by the ADPCM Adaptive Differential Pulse Code Modulation method. A low-power voice recording and reproducing system can be based on

l55b

Abstract: 2200 microfarad electrolytic capacitor J501M 148X E1600c mil-c-3965 22000 microfarad capacitor 200D607X0040A1
Contextual Info: A COMPANY TYPE 2 0 0 D. 202D W et Tantalum C apacitors OF SPRAGUE W et Sintered Anode T a n t a l e x Components T a n t a p a k ® C apacitor Assem blies FEATURES Wet Sintered Anode capacitor assemblies are widely used in filter, coupling, bypass and time-delay circuits in

DSPHEX

Abstract: TMS32025 TMS32050 addressing modes with examples SPRU011 SPRU014 SPRU018D SPRU052 TMS320 Tektronix asg 100 SPRU013
Contextual Info: TMS320C1x/C2x/C2xx/C5x Assembly Language Tools User’s Guide 1995 Microprocessor Development Systems Printed in U.S.A., March 1995 SDS SPRU018D TMS320C1x/C2x/C2xx/C5x Assembly Language Tools 1995 User’s Guide TMS320C1x/C2x/C2xx/C5x Assembly Language Tools

Contextual Info: Or, Call Customer Service at 1-800'548-6132 USA Only BURR- BROWNt E INA105 1 • CMR 86dB min OVER TEMPERATURE • DIFFERENTIAL AMPLIFIER • GAIN ERROR: 0.01% max • INSTRUMENTATION AMPLIFIER BUILDING BLOCK • NONLINEARITY: 0.001% max • NO EXTERNAL ADJUSTMENTS

Contextual Info: ANALOG DEVICES INC M2E » □ A N ALO G D E V IC E S FEATURES 150MSPS Encode Rate Low Input Capacitance: 17pF Low Power: 750mW -S .2 V Single Supply MIL-STD-883 Compliant Versions Available • OOltfiQO OOBObMM 7 » A H A High Speed 8-Bit Monolithic A/D Converter

PLSI 1016-60LJ

Abstract: PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT
Contextual Info: Lattice Semiconductor Data Book 1996 Click on one of the following choices: • Table of Contents • Data Book Updates & New Products • Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. ispLSI and pLSI Product Index Pins Density

RDRAM RAMBUS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE6D Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other

Contextual Info: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: N AMER PHILIPS/DISCRETE bR E D bb53T31 □□3Db40 RR1 « A P X Product Specification Philips Semiconductors BUK455-60A/B PowerMOS transistor GENERAL DESCRIPTION Q is n D S O N PARAMETER MAX. MAX. BUK455 Drain-source voltage Drain current (DC) Total power dissipation

Contextual Info: N ANER PHILIPS/DISCRETE bTE D • bbS3^31 P ro d uc t S p ecificatio n P hilips S em ico nd uc tors B U K 4 5 4 -5 0 0 B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: A D V A N C E D MI CR O D E V I C E S 3ÖE D 0 2 5 7 5 2 5 QQ3fit,bö 3 IAMD1 Preliminary Advanced Micro Devices 80C186 CMOS High Integration 16-Bit Microprocessor DISTINCTIVE CHARACTERISTICS • Direct addressing capability to 1 MByte of memory and 64-KByte I/O

BUK453-100B

Abstract: 100-P BUK453-100A T0220AB DIODE BJE
Contextual Info: b=JE T> N AMER PHILIPS/DISCRETE • bbS3T31 DOBQbDS AT? M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is Intended for use in

1NA114

Abstract: INA114AP INA114AG INA114 INA114BP ZTU2
Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only mmi BURR - BROW N ; _ INA114 FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 50|iV max The IN A 114 is a low cost, general purpose instrumen­ tation amplifier offering excellent accuracy. Its versa­ tile 3-op amp design and small size make it ideal for a

MIL-C-55302

Abstract: MILC55302 27305 531134-4
Contextual Info: AMP Catalog 82015 Box Contact Connectors R e vis e d 5 -9 5 3 -R o w Receptacle Assemblies .100 [2.54] Centerline Series Connectors Com m ercial Receptacle Assem blies H o using M a te ria l— In accordance w ith M IL-C -55302 Contact M a te rial and Fin ish —

AM28F256

Contextual Info: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current

lattice 1996

Contextual Info: ispLSI and pLSI 2128 ® High-Density Programmable Logic Functional Block Diagram Output Routing Pool ORP Output Routing Pool (ORP) D7 D3 D5 fmax = 100 MHz Maximum Operating Frequency tpd = 10 ns Propagation Delay TTL Compatible Inputs and Outputs Electrically Erasable and Reprogrammable

0E907

Abstract: 0C062 095B9 0E31A tms320cxx 00071H 0A95 0730Ah 0A85 0646Ah
Contextual Info: Application Report SPRA503 Implementing Speech Data for French LPC Date andTime-Stamping DTS on the TMS320CXX DSP Gerardo Murillo Digital Signal Processing Solutions Abstract This document provides a vocabulary of French speech data coded in LPC (format D6). This

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8D Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other