T0220AB Search Results

BUK551-60A

Abstract: BUK551-60B T0220AB fet transistor ft
Contextual Info: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 5bE PINNING - T0220AB PIN m 7110fl2b GO MM b ö M 465 • PHIN SYMBOL PARAMETER MAX. MAX. V ds Id P« T. BUK551 Drain-source voltage Drain current DC Total power dissipation

T0-220AB

Abstract: SOT-263
Contextual Info: MOUNTING INSTRUCTIONS Page SOT223 1140 SOT186; SOT263; T0220AB 1152

NPN Transistor VCEO 1000V

Abstract: LB 137 transistor
Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed pianar-passivated npn power switching transistor in a T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUÜ403A GENERAL DESCRIPTION High-voltage, high-sf>eed planar-passivated npn power switching transistor in T0220AB envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems,

BUT12

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,

T0-220AB

Abstract: SOT-263
Contextual Info: MECHANICAL DATA page SOT93 618 SOT 186 619 T0220AB 620 SOT223 621 SOT227B 622 SOT263 623 SOT263 lead form option 624

PS2045CT

Abstract: PS3045CT STPS1545CF STPS10100 STPS1045D STPS10L25D ps2045 STPS10100D stps3045ct STPS1545CT
Contextual Info: POWER RECTIFIERS rz 7 POWER SCHOTTKY DIODES T0220AC ^ 7/ ISOWATT220AC T0220AB SGS-THOMSON » « m it g ïïM D t g l ISOWATT220AB T0220 TYPE SCHOTTKY RECTIFIERS T j max =150°C (except for 15V & 25V) lo V rrm I r @ V rrm Max (mA) I fsm (V) V f @ lo Max (V)

Contextual Info: FEP16AT THRU FEP16JT FAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage - 50 to 600 Volts Current - 16.0 Amperes FEATURES T0220AB ♦ Dual rectifier construciton, positive centertap ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Contextual Info: T0220AB 0 .3 5 0 8 .8 9 0 .3 3 0 (8 .3 9 ) 0.105(2.67) 0.095(2.41) 0.0 3 7 (0 .9 4 ) '0 .0 2 7 (0 .6 8 ) SC A L E : 2:1 0.185(4.70) 0.1 7 5 (4 .4 4 ) 0.055(1.39) '0 .0 4 5 (1 .1 4 ) 0.603(15.3 g ) 0 .5 7 3 (1 4 .5 5 ) 0.560(14.g g ) 0 .5 3 0 (1 3 .4 6 )

T0-220AB

Abstract: SOT-263
Contextual Info: PACKAGE OUTLINES Page SOT186 1126 SOT186A 1127 SOT223 1128 SOT263 1129 SOT263-01 1130 SOT404 1131 SOT426 1132 T0220AB 1133

T0-220AB

Abstract: SOT-263
Contextual Info: MOUNTING INSTRUCTIONS page SOT93 626 SOT186; SOT263; T0220AB 633 SOT227B ISOTOP 639 SOT223 642

T0-220AB

Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET

BUT11A1

Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Contextual Info: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

837 mosfet

Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET

TRANSISTOR C 557 B

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effeot power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING-T0220AB

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: MOUNTING AND SOLDERING INSTRUCTIONS page TO126/SOT82 768 SOT186/A; SOT78 T0220AB 772 SOT199/SOT429 (TC>247)/SOT339 (TOP3D) 776 Philips Semiconductors Power Bipolar Transistors Mounting and Soldering GENERAL DATA AND INSTRUCTIONS FOR T0126/S0T82 When the driven nut or screw is in direct contact with a

wk 2 e transistor

Abstract: transistor BU 705 BUT21
Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.

BUT12

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,

BUT21

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T0220AB SYMBOL Id p« T, R d S ON PARAMETER MAX. MAX. BUK452 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed pianar-passivated npn power switching transistor in T0220AB envelope intended for use in nigh frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

IGBTs Transistors

Contextual Info: PACKAGE OUTLINES Page SOT186 1126 SOT186A 1127 SOT223 1128 SOT263 1129 SOT263-01 1130 SOT404 1131 SOT426 1132 T0220AB 1133 Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Dimensions in mm _ , Package outlines 9 10.2 max 5.7 max N et Mass: 2 g