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1da sot-23 Abstract: 1da sot LS05-A FDC6304P SOIC-16 O443 Contextual Info: July 1997 FAIRCHILD S E M IC O N D U C T O R w FDC6304P Digital FET, Dual P-Channel General Description F e a tu re s These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize	OCR Scan	FDC6304P FDC6304P 0033414h 1da sot-23 1da sot LS05-A SOIC-16 O443	PDF
Contextual Info: July 1997 FAIRCHILD SEM IC ONDUCTO R m FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize	OCR Scan	FDC6304P OT-23 FDC6304P 0033414b	PDF

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1da sot-23

Abstract: 1da sot LS05-A FDC6304P SOIC-16 O443
Contextual Info: July 1997 FAIRCHILD S E M IC O N D U C T O R w FDC6304P Digital FET, Dual P-Channel General Description F e a tu re s These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

OCR Scan

FDC6304P FDC6304P 0033414h 1da sot-23 1da sot LS05-A SOIC-16 O443

PDF

Contextual Info: July 1997 FAIRCHILD SEM IC ONDUCTO R m FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

OCR Scan

FDC6304P OT-23 FDC6304P 0033414b

PDF