003450B Search Results

KM44C4004B

Contextual Info: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: HM67S36130 Series 131,072-words x 36-bits Synchronous Fast Static RAM HITACHI ADE-203-659A Z Product Preview Rev. 1 Feb. 21,1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write

Contextual Info: BD840 BD842 BD844 _ J \ _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic TO-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843.

Z16C32

Contextual Info: P r e l im in a r y P r o d u c t S pecific a tio n < £ SLO E Z16C32 IU SC I n t e g r a t e d U n i v e r s a l S e r ia l C o n t r o l l e r FEATURES • Two Full-Capacity 20 MHz DMA Channels, Each with 32-Bit Addressing and 16-Bit Data Transfers.

Contextual Info: • bbS3R31 QQ245Q3 ATM H A P X N AMER PHILIPS/DISCRETE BCF32 BCF33 b7E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level, low noise general purpose applications in thick and thin-film circuits.