003ST30 Search Results

Contextual Info: BF964S _ J \_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r V H F applications in television tuners. The device is also suitable for use in professional

BSV81

Contextual Info: BSV81 J V. N-CHANNEL IG-MOS-FET Symmetrical depletion type field-effect transistor in a TO-72 metal envelope with the substrate connec­ ted to the case. It is intended fo r chopper and other special switching applications, e.g. timing circuits, multiplex circuits, etc. The features are a very low drain-source 'on' resistance, a very high drain-source

transistor mosfet bf964s

Abstract: BF964SA BF964S 10103F
Contextual Info: BF964S J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r V H F applications in television tuners. The device is also suitable fo r use in professional