00411 Search Results

BY249-300

Abstract: TAG 600 600R BY249 BY249-300R
Contextual Info: SbE D • 711002b 0041122 =551 « R H I N T -0 1 -1 7 BY249 SERIES PHILIPS INTERNATIONAL 5bE ]> SILICON RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T 0-22 0 plastic envelopes, intended for power rectifier applications. The series consists of the following types:

Germanium Power Diodes

Abstract: 1N273 1N279 Germanium Power Devices "Germanium Diode"
Contextual Info: iQAQQfiS CENTRAL SEMICONDUCTOR 920 00411 c DESCRIPTION The CENTRAL SEMICONDUCTOR 1N273 and 1N279 types are gold bonded germanium diodes mounted in hermetically sealed glass case, designed for general purpose applications. Special devices with a higher breakdown voltage and/or lower leakage limits are available on special order.

MB2141A

Abstract: MB2142-11 MB2145-507 b2c2
Contextual Info: FUJITSU SEMICONDUCTOR CM42-00411-2E CONTROLLER MANUAL 2 F MC-16L/16LX EMULATION POD MB2145-507 HARDWARE MANUAL 2 F MC-16L/16LX EMULATION POD MB2145-507 HARDWARE MANUAL FUJITSU LIMITED PREFACE • Using the Emulation Pod Safely This manual contains important information regarding the safe use of the MB2145-507

L215

Abstract: V7-6C17D8
Contextual Info: CATALOG Honeywell FE D .M F G .C O D E SWITCH-BASIC LIS TIN G V 7 -6 C 1 7 D 8 CW-C6018 9 1929 oo a co 1 - 1\ > REV IS IO N S REL DWG PR19692 G R T 10 JAN 92 »76108 LJF OCT M C I 0041190 ANSI Y14.5M — 1982 APPLIES THI RD A N G L E P R O J E C T I O N THIS

Germanium power

Contextual Info: 1QAQOR5 CENTRAL SEMICONDUCTOR 92D 00411 c DESCRIPTION The CENTRAL SEMICONDUCTOR 1N273 and 1N279 types are gold bonded germanium diodes mounted in a hermetically sealed glass case, designed for general purpose applications. Special devices with a higher breakdown voltage and/or lower leakage limits are available on special order.

vmivme-4116

Abstract: VMIVME 4116 instruction manual VMIVME instruction manual MC68000 PANDUIT connector VMIVME
Contextual Info: VMIVME-4116 8-channel 16-bit Digital-to-Analog Converter Board Product Manual 256 880-0444 w 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA (800) 322-3616 w Fax: (256) 882-0859 500-004116-000 Rev. U COPYRIGHT AND TRADEMARKS Copyright 2003. The information in this document has been carefully checked and is believed to be entirely reliable.

NEC uPD

Abstract: NEC AND 1994 AND sdram
Contextual Info: • b4B ?S 5S 0041123 S 34 ■ PRELIMINARY DATA SHEET_ M O S IN T E G R A T E D C IR C U IT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The uPD4516421, uPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x

ze 003

Abstract: HONEYWELL V7 L215 V7-1C17D8-295
Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER REV DOCUMENT B 0041135 C H A N G E D BY VS CHECK 26JUN08 BLR V7-1C17D8-295 CWB1659 B B STEEL ACTU ATOR A A REPLACES : X116307-V7 CHARACTERISTICS OPERATING F O R C E - RLECTRICAL TRAVEL- .0 2 7 MAX O V E R T R A V E L -

MB2141A

Abstract: MB2142-11 MB2145-507 b2c2 F2MC-16L
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM42-00411-1E F²MC-16L/16LX/16F EMULATION POD MB2145-507 HARDWARE MANUAL F²MC-16L/16LX/16F EMULATION POD MB2145-507 HARDWARE MANUAL FUJITSU LIMITED PREFACE • Using the Emulation Pod Safely This manual contains important information regarding the safe use of the MB2145-507

BY359

Abstract: M1048 diode M1048 0G411 D04115 d0411
Contextual Info: SbE D H i 7 1 1 D 0 2 fc i 0041148 Ib ß H IP H IN BY359 SERIES M AINTENANCE TYPE P H IL IP S 5bE IN T E R N A T IO N A L D 7 ~ -0 3 - / ~7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifie r diodes in T 0 -2 2 0 plastic envelopes, featuring fast recovery

Contextual Info: REVISIONS REV. 01 DESCRIPTION ECN NO. DATE N/A 08/30/10 FIRST RELEASE PAGE 4 & 5 ARE FOR INTERNAL ONLY TITLE PART NUMBER PART DESCRIPTION 824-00411F RoHS compliant per EU Directive 2002/95/EC without exemption of solder content WARNING ! UNLESS OTHERWISE

V7-6C37E9-036

Abstract: H1135 L215 6C37 CL215
Contextual Info: CATALOG Honeywell FED.MFG.CODE L IS TI NG V 7 -6 C 3 7 E 9 -0 3 6 SWITCH-BASIC C W -C6037 9 1929 -.160 - . 330 CO I 'D — .40 O - I CD LU T .250*.003 “ CORROSION R ESISTAN T STE E L AC TU ATO R fo * l; O : CO < > CM REV I S IONS A 0041196 CO o JA —1

2,5GHz oscillator

Contextual Info: 3e] TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA » e | CI0 CÌ7 S S 0 GO□□.‘+11 ? DIS C R E T E/ OP TO > numm/fèmm 39C 00411 D T - 3 5 - o C ' _ _ O o UHF ~ s UHP ~ s K*;tJ ^ V fg m o o UHF to S Band PowerAmplifier Applications UHF to SBand OscillatorApplications

MB2141A

Abstract: MB2142-11 MB2145-507 b2c2 F2MC-16L
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM42-00411-1E F²MC-16L/16LX/16F EMULATION POD MB2145-507 HARDWARE MANUAL PREFACE • Using the Emulation Pod Safely This manual contains important information regarding the safe use of the MB2145-507 emulation pod.

mitsubishi split ac

Abstract: 013A1
Contextual Info: t U de nd v e er lo pm en Preliminary Specifications REV.A Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M16C / 6NT Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description Description The M16C/6NT group of single-chip microcomputers are built using the high-performance silicon gate

m1722

Abstract: 7215a BYQ27 Ultra Fast Recovery Double Rectifier Diodes
Contextual Info: S fc.E D 7 iiD f l2 t. o o m n o m 2 m p h in T - 3 - / 7 BYQ27 SERIES PHILIPS INTERNATIONAL SbE D ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended fo r

DCS Basic Notes

Abstract: 123c8070p001 dcs honeywell L215 12-3C80
Contextual Info: CATALOG SWITCH - BASIC Honeywell LISTING V7-6C27D837- F E D . MF G . C O D E 9 I 9 2 9 .667 - <75 T - I . 3 5 0 £.005 o 00 C\l ro oo Q JL CK -CORROSION RESISTANT STEEL ACTUATOR o z u_ u < o ° CO II | \ LÜ > ° .40 * .173 M A X^ P R E TR A V E L Q_ .187 ±.003.6 0 3 2 .0 3 8

L215

Abstract: V7-6C17D8 dcs honeywell
Contextual Info: CATALOG Honeywell FED.M FG .CO DE L I ST ING V 7 -6 C 1 7 D 8 — 2 6 3 SWITCH-BASIC CW -C6023 91929 hO CD CN I CO Û a o STEEL ACTUATOR : C D ,_ S I w < 5 ^ CL 00 R E V I S I ONS CO 66350 JAP 20 SEP 89 A CO _i D C0_ R D I 69205 BAB 7 JAN 91 CO C 7 02 4 7

Contextual Info: EmberZNet 4.7.2 API Reference: For the EM250 SoC Platform December 18, 2012 120-3016-000-4720 Silicon Laboratories Inc. 400 West Cesar Chavez Austin, TX 78701 Tel:1+ 512 416-8500 Fax:1+(512) 416-9669 Toll Free:1+(877) 444-3032 www.silabs.com Disclaimer The information in this document is believed to be accurate in all respects at the time

D8279

Abstract: M30840MCT M3084
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

0262F8

Abstract: marking TA1S INV04 p67 marking to-252
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TWL 3016

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

DIODE marking CK 6CA

Abstract: DIODE marking 7BA SG 6CA 6ca DIODE code 20c 7ba Diode HP5 637 409 SG 5BA MARKING CO5 sg 7ba ai cm1 100 1e8
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog