1N279 Search Results

Contextual Info: 1N2798 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.75 V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)5.0 @Temp. (øC) (Test Condition)150#

Germanium Power Diodes

Abstract: 1N273 1N279 Germanium Power Devices "Germanium Diode"
Contextual Info: iQAQQfiS CENTRAL SEMICONDUCTOR 920 00411 c DESCRIPTION The CENTRAL SEMICONDUCTOR 1N273 and 1N279 types are gold bonded germanium diodes mounted in hermetically sealed glass case, designed for general purpose applications. Special devices with a higher breakdown voltage and/or lower leakage limits are available on special order.

selenium diode

Abstract: "Germanium diode"
Contextual Info: 1N279 Germanium Diode 3.63 Diodes Germanium and Selenium Diodes Germanium Di. Page 1 of 1 Enter Your Part # Home Part Number: 1N279 Online Store 1N279 Diodes Germanium Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

RSF0820

Contextual Info: Standard Recovery Rectifiers Part Number RSF0820 1N2793 1N2794 1N2795 1N2796 1N2797 1N2798 1N2799 UT6105 UT6110 UT6120 UT6130 UT6140 UTR6440 UT6160 1N2800 1N2246 1N2246A 1N2248 1N2248A 1N2021 1N2250 1N2250A 1N2022 1N2023 1N2252 1N2252A 1N2024 1N2025 1N2254

Germanium power

Contextual Info: 1QAQOR5 CENTRAL SEMICONDUCTOR 92D 00411 c DESCRIPTION The CENTRAL SEMICONDUCTOR 1N273 and 1N279 types are gold bonded germanium diodes mounted in a hermetically sealed glass case, designed for general purpose applications. Special devices with a higher breakdown voltage and/or lower leakage limits are available on special order.

DSAIH0002567

Contextual Info: B K C INTERNATIONAL 03E I | 1 1 7 ^ 3 ODOOlhO 7 1 ~ -r-a/-¿>7 Type No. 1N279 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617) 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES

Contextual Info: 1N2797 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage250 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.75 V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)5.0 @Temp. (øC) (Test Condition)150#

Contextual Info: 1N2799 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage350 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.75 V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)5.0 @Temp. (øC) (Test Condition)150#

Contextual Info: 1N2795 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage150 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.75 V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)5.0 @Temp. (øC) (Test Condition)150#

1N1191A

Contextual Info: dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon Power Rectifiers 18 AMP-DOS JEDEC Numbers Peak Reverse Voltage 1N248. 1N1191, 1N1191A, 1N2793 1N249, 1N1192. 1N1192A, 1N2794 1N1193. 1N1193A, 1N2021, 1N2795

1N1436

Abstract: 1N2021 1N1191 1N1192 1N1193 1N1194 1N1196 1N1197 1N1198 1N2154
Contextual Info: . ELITE SEMICONDUCTOR PRODUCTS, INC. 860North Richmond Ave. Lindenburst, New York 11757 PH 631-884-8400 I FX 631-884-8427 www.elitesemi.com STANDARD RECOVERY RECTIFIERS 40 amps - 50 to 1200 volts DO 5 DO203AB Peak Reverse Voltage JEDEC Numbers 1N1191,A

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Contextual Info: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

LT3973-3.3

Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731
Contextual Info: ^ discrete devices | jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum

LT3973-3.3

Abstract: L1117T-3.3 LT3971-3.3
Contextual Info: jomitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont'd stud mounted silicon power rectifiers DO-4 case style — cont’d T »« Maximum Maximum Average Forward Peak Reverse Current (Amps) Voltage @ Case Temp. (°C) (volts)

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

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1n250 diode

Abstract: R3110 1N248 S3150 S3190 s314 R3140 R31100 R3105 Rectifier diode 1N249
Contextual Info: Avalanche Silicon Power Rectifiers Series 31 E L E C T R IC A L C H A R A C T E R I S T I C S : M a x i m u m A v e r a g e F o r w a r d C u r r e n t , S in g l e P h a s e H a lf W a v e D C R a t in g a t 1 2 4 ° C . C a s e T e m p e r a t u r e . 3 0 a m p e r e s

1N1301

Abstract: 1N279 1n1195 1n27b 1N3209 1N1191 S304100 S304120 S30420 S30440
Contextual Info: Silicon Power Rectifier S /R 3 0 4 Series Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes ^ H X - i Microsemi Catalog Number Standard * S30420 * S30440 * S30460 * S30480 * S304100 * S304120 f. Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is

TM108

Abstract: 1N223B 1N2268 TR301 TM69 1N245S 1N244B TM37 1N2227 1N2225
Contextual Info: 3869720 GENERAL DIODE CORP GE NE R AL DIO DE 86D 00327 D 7- o - r< CORP DE^I 3 0 ^ 7 2 0 0000327 T T STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d TYPE \ 1N2224A 1N2225 1N2225A 1N222S 1N222BA Do-4 Do-10 . Do-10 Do-4 . DO-4 1000 1000 1000 1200 1200

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY