0089H Search Results

TE28F128J3A

Abstract: BA 30 C Sharp Electronics 13B1 lh28f128spht-ptl12 flash memory application sharp memory code 0089H
Contextual Info: LH28F128SPHT Flash Memory Application Note Conversion from the Intel TE28F128J3A C -120 to the SHARP LH28F128SPHT-PTL12 DEVICE ID COMMAND DIFFERENCES Table 1. Device ID PART NUMBER TE28F128J3A LH28F128SPHT Manufacturer ID 0089H 00B0H Device ID 0018H 0017H

Sharp Electronics

Abstract: 13B1 TE28F128J3A flash memory application
Contextual Info: LH28F128SPHT Flash Memory Application Note Conversion from the Intel TE28F128J3A C -120 to the SHARP LH28F128SPHT-PTL12 DEVICE ID COMMAND DIFFERENCES Table 1. Device ID PART NUMBER TE28F128J3A LH28F128SPHT Manufacturer ID 0089H 00B0H Device ID 0018H 0018H

tr8c

Abstract: TMS28F200
Contextual Info: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture

Asus MONITOR MOTHERBOARD CIRCUIT MANUAL

Abstract: T2D 83 diode gp026 st GP025 82430TX 82371EB Asus PC MOTHERBOARD CIRCUIT schematic diode T75A Asus PC MOTHERBOARD CIRCUIT MANUAL 8272A floppy disk controller block diagram
Contextual Info: PRELIMINARY DRAFT Intel Extended Temperature 82371EB PCI-TO-ISA/IDE Xcelerator PIIX4E Datasheet  Integrated 16 x 32-bit Buffer for IDE PCI Burst Transfers  Supports Glue-less “Swap-Bay” Option with Full Electrical Isolation Supported Kits for both Pentium and

Realtek PCI LAN 8101L

Abstract: 9346CR RTL8101L RTL8139 BootROM rt8101l lan card RTL8100 RTL8139A RTL8101L modem RTL810 8101L
Contextual Info: RTL8101L 1. Features: 1.1 Ethernet Controller Features: wake-up when main power remains off Supports auxiliary power auto-detect, and sets the related capability of power management registers in PCI configuration space Includes a programmable PCI burst size and early Tx/Rx

diode T35 12H

Abstract: ST10F269Z2Q6 ST10F269Q ST10F269Z2T3 PQFP144 ST10F269 TQFP144 diode t318 BB126 st10 Bootstrap
Contextual Info: ST10F269 16-BIT MCU WITH MAC UNIT, 128K to 256K BYTE FLASH MEMORY AND 12K BYTE RAM DATASHEET • ■ 2K Byte Internal RAM 16 CPU-Core and MAC Unit Watchdog 16 10K Byte XRAM CAN1_RXD CAN1_TXD CAN1 CAN2_RXD CAN2_TXD CAN2 PEC Oscillator and PLL 16 Interrupt Controller

Contextual Info: DAC1653Q/DAC1658Q Quad 16-bit DAC: 10 Gbps JESD204B interface: x2, x4 and x8 interpolating Advance data sheet Revision 2.3.1 1. GENERAL DESCRIPTION DAC1653Q and DAC1658Q are high-speed, high-performance 16-bit quad channel Digital-to-Analog Converters DACs .

R14 P1F

Abstract: N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12
Contextual Info: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CF26AXBG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CF26A

Contextual Info: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel

Contextual Info: in te l 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads Backwards-Compatible with 28F008SA Command-Set SmartVoltage Technology — User-Selectable 3.3V or 5V Vqc

Contextual Info: Ä M Ä K I I 0 M F @ [^ O ii]Ä ¥ 0 ® M VS28F016XS, MS28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to +125°C — QML Certified — SE2 Grade ■ 0.25 MB/sec Write Transfer Rate ■ MS28F016XS 55°C to 125°C

Contextual Info: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in

Contextual Info: in tj 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY 28F200BX-T/B, 28F002BX-T/B • x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ x8-only Input/Output Architecture

Contextual Info: 28F400BX-T/B, 28F004BX-T/B 4 MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY • x8/x16 Input/Output Architecture — 28F400BX-T, 28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Very High-Performance Read — 60/80 ns Maximum Access Time

Contextual Info: in te l A P iM ! O M IR S K E fflA T r iK S lR ] DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY • User-Selectable 3.3V or 5V Vcc ■ User-Configurable x8 or x16 Operation ■ 70 ns Maximum Access Time ■ 0.43 MB/sec Write Transfer Rate

Contextual Info: Ä P M Ä IM ! OM F©KffiíL&YO©M in te i 82374EB/82374SB EISA SYSTEM COMPONENT (ESC In te g ra te s E ISA C o m p a tib le Bus C o n tro lle r — T ra n s la te s C y cles B e tw e e n E ISA and ISA Bus — S u p p o rts E IS A B u rst an d S tan d ard

82378ib

Contextual Info: A P M Ä M ! DM iP© I^[ìfflA'irD@ N] in te i 82378IB SYSTEM I/O SIO Provides the Bridge Between the PCI Bus and ISA Bus Arbitration for PCI Devices — Four PCI Masters are Supported — Fixed, Rotating, or a Combination of the Two 100% PCI and ISA Compatible

Contextual Info: intei 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Sm artVoltage Technology — User-Selectable 3.3V or 5V V cc -U s e r-S e le c ta b le 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 M B /sec Burst W rite Transfer Rate

Contextual Info: in tj. 28F400BX-T/B, 28F004BX-T/B 4 MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY • x8/x16 Input/Output Architecture — 28F400BX-T, 28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Very High-Performance Read

Contextual Info: in te i. 28F200BL-T/B, 28F002BL-T/B 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6V ■ Expanded Temperature Range 20°C to +70°C ■ x8/x16 Input/Output Architecture

REJ09B0324-0200

Abstract: PLQP0064KB-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

KFG2G16Q2A

Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Contextual Info: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

TRANSISTOR SMD kl3

Abstract: P-LSSOP20-4 fra4 transistor bc 549
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

63FBGA

Abstract: KFG1G16Q2B onenand
Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,