00S73 Search Results
00S73 Price and Stock
PEPPERL+FUCHS GmbH GLV18-8-200-S-73-120PHOTOELECTRIC (AUTOMATION) |
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GLV18-8-200-S-73-120 | Box | 1 |
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PEPPERL+FUCHS GmbH GLV18-8-400-S-73-120PHOTOELECTRIC (AUTOMATION) |
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GLV18-8-400-S-73-120 | Box | 1 |
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Vishay Intertechnologies RW69V200S73RS-2C-23 20 5% RW69V200 S73 - Tape and Reel (Alt: RW69V200S73) |
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RW69V200S73 | Reel | 11 Weeks | 500 |
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RW69V200S73 |
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AAEON Technology Inc 9741300S73- Bulk (Alt: 9741300S73) |
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9741300S73 | Bulk | 1,200 |
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Vishay Intertechnologies RW68V100S73RS-10-39 10 5% RW68V100 S73 - Tape and Reel (Alt: RW68V100S73) |
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RW68V100S73 | Reel | 11 Weeks | 500 |
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00S73 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BTY79-400RContextual Info: N AMER PHILIPS/DISCRETE bb53^31 00S73A3 T77 H A P X B IY79 StHIhS b'lE » THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended for use in power control circuits e.g. light and motor control and power switching systems. The series consistos of reverse polarity types (anode to stud) identified by a suffix R: BTY79-400R to |
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00S73A3 BTY79-400R 1000R. BTY79-400R 1000R DD273aT bb53T31 BTY79 | |
175 WIV High Switching
Abstract: FDH1000 FDLL1000
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34bTti74 D0H733Ã FDH1000/FDLL1000 DO-35 FDLL1000 LL-34 175 WIV High Switching FDH1000 | |
Contextual Info: 3875081 G E SOLID STATE 01E Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D • 19874 D -WII HAS 43D2271 00S733b Ô Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs In frare d E m itting Diode & NPN Silicon Photo-T ransistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide, |
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43D2271 00S733b MCT26 MCT26 92CS-42662 92CS-429S1 | |
Diagram IC Lm 2476
Abstract: 4 digit 7 segment lcd display pin configuration 3.5 digits lcd display 4.5 digit lcd 4-digit counter philips e3 DDS7315 PCF1179C PCF1179CT PCF1179CU
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711032b 05730A PCF1179C 12-hour 24-hour 28-lead PCF1179C 711002t) Diagram IC Lm 2476 4 digit 7 segment lcd display pin configuration 3.5 digits lcd display 4.5 digit lcd 4-digit counter philips e3 DDS7315 PCF1179CT PCF1179CU | |
Contextual Info: _ DATAS H E E T _ / MOS INTEGRATED CIRCUIT /iPD78011BY/78012BY,78013Y,78014Y 8-BIT SINGLE-CHIP MICROCOMPUTER D E S C R IP T IO N /iPD78011BY,78012BY, 78013Y and 78014Y are /¿PD78014Y subseries products within the 78K/0 series and are |
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/iPD78011BY/78012BY 78013Y 78014Y /iPD78011BY 78012BY, 78014Y PD78014Y 78K/0 /iPD78014Y | |
BTY91-400RContextual Info: N AUER PHILIPS/DISCRETE b^E bb53^31 DD373T2 TfiT « A P X D BTY91 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r power control and power switching applications. The series consists of reverse polarity types anode to stud identified by a Suffix R: BTY91-400R to |
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DD373T2 BTY91 BTY91-400R 7Z07777 bb53T31 0373Tb 7Z09371 bbS3T31 | |
Contextual Info: Si GEC PLESSEY S E M I < 1 l \ I ) |J c r O ]\ PRELIMINARY INFORMATION s SP5659 2.7GHz l2C BUS CONTROLLED LOW PHASE NOISE FREQUENCY SYNTHESISER The SP5659 is a single chip frequency synthesiser designed for tuning systems up to 2.7GHz. The RF preamplifier drives a divide by two prescaler which |
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SP5659 SP5659 37bflSE2 0Q273b3 37t0522 QQ273b4 | |
Contextual Info: N ANER PHILIPS/DISCRETE b'lE D b b S B ^ l 0027310 II 4 «APX BT151F SERIES FULL-PACK THYRISTORS Glass-passivated thyristors in SOT-186 envelopes, incorporating electrical isolation between the mounting base and all three terminals. Applications include temperature control, m otor control, |
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BT151F OT-186 BT151F-500 | |
Contextual Info: ADV MI CRO PLA/PLE/ARRAYS Tb 0^ 732^ 0HS7S5b , T-46- 13- 47' 24-P in XO R A m P A L 20X R P 10 F a m ily 24-Pin IMOX Programmable Array Logic PAL Elements D istinctive Characteristies • • • • • Post Programming Functional Yield (PPFY) of 99.9% |
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24-Pin PAL20XRP10 | |
Contextual Info: HM51W4260C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-292B Z Rev. 2.0 Jul. 18, 1996 Description The Hitachi HM 51W 4260C is CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51W 4260C has realized higher density, higher performance and various functions by employing 0.8 |im CMOS process |
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HM51W4260C 144-word 16-bit ADE-203-292B 4260C 16-bit. HM51W 4260C | |
itt capacitor
Abstract: ITT Intermetall B711 CCIR601 VDP3108 Sine PWM AC 50HZ semiconductors cross reference ITT semiconductors CTS51 transistor GY 721
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-352-3ai 4bfl2711 6251-352-2AI. 6251-352-3AI. D-79108 D-79008 4bfl2711 itt capacitor ITT Intermetall B711 CCIR601 VDP3108 Sine PWM AC 50HZ semiconductors cross reference ITT semiconductors CTS51 transistor GY 721 | |
TA 2104 BNContextual Info: Semiconductor PRELIMINARY NSAM266SP National NSAM266SP CompactSPEECH Digital Speech Processor with Full-Duplex Speakerphone General Description The NSAM266SP is a member of National Semiconductor’s CompactSPEECH Digital Speech Processor family. This processor provides Digital Answering Machine DAM func |
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NSAM266SP NSAM266SP NM29A040 NM29A080 CR16A, 16-bit V12EN 9545M TLC761 TA 2104 BN | |
M27512Contextual Info: SGS-THOMSON M27512 ^0 g[M i[L[I(g¥[MM(gS G S-THOMSON 3QE » 512K (64K x 8) NMOS UV ERASABLE PROM P R E LIM IN A R Y DATA • FAST ACCESS TIME: 200ns MAX M27512-2F1 ■ 0 TO +70°C STANDARD TEMPERATURE RANGE ■ SINGLE +5V POWER SUPPLY ■ LOW STANDBY CURRENT (40mA MAX) |
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M27512 200ns M27512-2F1 M27512 288-bit 200ns, 28-PIN P058-I/2 | |
00S73
Abstract: 6805L IC-3433 KM 3502 P
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uPD42S16805L uPD4216805L iiPD42S16805L, 4216805L 28-pin /iPD42S16805L-A60, 4216805L-A60 IPD42S16805L-A70, 4216805L-A70 00S73 6805L IC-3433 KM 3502 P | |
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A19T
Abstract: Lmb204 GDS7373 ai9toa0 UCC4
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44Tb2G4 DGS7371 00573S7 MiHb204 A19T Lmb204 GDS7373 ai9toa0 UCC4 | |
TA8862P
Abstract: rbs 3308 toshiba ta8862p TA8862 G027271 TMP87CH33N C833 map 3202 312 7 Segment Display RBS 3206
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P87C833/C33/H TMP87C833N, TMP87C33IM, TMP87CH33N, 87C833/C33/H33 TMP87C833N SDIP42-P-600 TMP87PH33N TMP87CC33N TMP87CH33N TA8862P rbs 3308 toshiba ta8862p TA8862 G027271 TMP87CH33N C833 map 3202 312 7 Segment Display RBS 3206 | |
IC-3185BContextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ / /iPD42$16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D escription The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs. |
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uPD42S16800L uPD4216800L uPD42S17800L uPD4217800L 16M-BIT /JPD42S16800L, 4216800L, 42S17800L, 4217800L //PD42S16800L, IC-3185B | |
TA8862P
Abstract: toshiba ta8862p TA8862
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TMP87C833/C33/H33 TMP87C33IM, 87C833/C33/H33 TMP87C833N TMP87CC33N TMP87CH33N A285HC1S-13319 12MHz TA285HCIS-13306 TA8862P toshiba ta8862p TA8862 | |
S87C51 Signetics
Abstract: 87C51FA S87C51FA S87C51FA-4N40 80C51 83C51 83C51FA 87C51 8XC51 SU00033
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7110fl2b 80C51FA/83C51FA/87C51 83C51 87C51 8XC51 80C51 80C51. 83C51FA/87C51 S87C51 Signetics 87C51FA S87C51FA S87C51FA-4N40 83C51FA SU00033 | |
ti31
Abstract: 29PL141 A12Q OE57S P113 P115 T121 am29pl131 programmable pipeline microcode memory 16x16 barrel shifter with flipflop
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Am29PL142 128-word 34-bit 20-MHz 28-pin AIS-CP-15M-03/88-0 ti31 29PL141 A12Q OE57S P113 P115 T121 am29pl131 programmable pipeline microcode memory 16x16 barrel shifter with flipflop |