4BFL2711 Search Results

Q002

Abstract: BB621 BB622
Contextual Info: ITT S E N I C O N D / INTERMETALL 50E D 4bfl2711 Q G 0 2 b 4 2 17 3 « I S I T i m 0 BB621, BB622 Tuner Diodes Silicon Epitaxial Planar Capacitance Diodes im MiniMelf case MELF = Metal ELectrodes Face-bonding) especially suited for automatic insertion with very wide effective capacitance

LL4149

Abstract: LL4150 LL4152 LL4153 LL4447 LL4449 LL4450 LL4451 LL4453 LL4454
Contextual Info: ITT S E M I C O N D / INTERMETALL b lE » • 4bfl2711 0003172 2^3 m i S l Silicon Diodes Silicon Diodes for general purpose and switching Cathode Mark h - 3.5*01-» / - These diodes are identical electrically to the corresponding JEDEC 1N . . . types.

itt ol 170

Contextual Info: PRELIMINARY DATA SHEET HAL300 Differential Hall Effect Sensor 1C A Edition June 14, 1995 62 5 1 -3 4 5 -3 P D 4bfl2711 QD0S231 43b ITT Semiconductors ITT HAL 300 PRELIMINARY DATA SHEET Differential Hall Effect Sensor 1C HAL 300 in CMOS technology Vsup Vsup

1N5225S

Abstract: 1N5226S 1N5227S 1N5228S 1N5229S 1N5230S 1N5231S 1N5232S 1N5233S
Contextual Info: ZENER DIODES ITT SEMICOND/ INTERMETALL SDE D • 4bfl2711 ÜÜDES13 HTl miSI 1N5225S Series 300 mW Zener Diodes DO-34 Glass Package TA = 25 °C Type 1N5225S 1N5226S 1N5227S 1N5228S 1N5229S 1N5230S 1N5231S 1N5232S 1N5233S 1N5234S 1N5235S 1N5236S 1N5237S 1N5238S

diode ITT

Abstract: 1n4448 itt 1N4448 LL4448 QQQ317D
Contextual Info: ITT SEMICOND/ INTERMETALL blE D • 4bfl2711 0ÜG31t.ô fibE * I S I LL4448 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4448 K 3.510.1- Cathode Mark

ITT ZENER

Abstract: 1N4729 1N4764 ZM4729 ZM4730 ZM4731 ZM4732 ZM4764 170DK Zener intermetall
Contextual Info: I T T SEflICONP/ INTERNETALL blE D • 4bfl2711 0003 20 b 4Tb « I S I ZM4729 . . . ZM4764 Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. Standard Zener voltage tolerance is ± 1 0 % . Add suffix “A ” for ± 5 % tolerance. Other tolerances available

1N5241S

Contextual Info: ZENER DIODES ITT SEMICOND/ INTERMETALL SDE D • 4bfl2711 ÜÜDES13 HTl m i S I 1N5225S Series 300 mW Zener Diodes DO-34 Glass Package TA = 25 °C Type 1N5225S 1N5226S 1N5227S 1N5228S 1N5229S 1N5230S 1N5231S 1N5232S 1N5233S 1N5234S 1N5235S 1N5236S 1N5237S

BCX71RG

Abstract: BCW61RA BCW61RD BCW61 BCX71 BCW61R transistor marking bh ra BCW60 BCW61A BCW61B
Contextual Info: ITT SEMICON] / INTERMETALL SOE » 4bfl2711 D002L00 714 BCW 61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF am plifier applications. H Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,

DD05215

Abstract: ADD1210
Contextual Info: A t* t '$ / PRELIM INARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 Ü005213 410 Edition June 30, 1995 6 2 5 1 -41 4-2 P D ITT Semiconductors ctors ITT HAL115 PRELIMINARY DATASHEET Hall Effect Sensor 1C in CMOS technology Marking Code Type Marking

Contextual Info: PRELIMINARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 D00S213 410 • Edition June 30, 1995 6251-414-2PD "I I I II I | ITT Semiconductors - I I I HAL115 Hall Effect Sensor 1C in CMOS technology I PRELIMINARY DATASHEET Marking Code Release Notes: Revision bars indicate significant

ITT ccu 3000 i

Abstract: ITT CCU CCU3000
Contextual Info: j& p n K | g » tt CCU 3000, CCU 3000-1, CCU 3001, CCU 3001-1, Central Control Unit h Edition Feb. 14, 1995 6251-367-1DS ITT Semiconductors • HbfiS?].! GGG4ò44 b'ìB ■ ITT CCU 3000, CCU 3000-1 CCU 3001, CCU 3001-1 Contents Page Section Title 4 1. 1.1.

ITT DIODE 125

Contextual Info: S ÏÏT Æ 1997 IT T • IN 4bô2711 0üübS7E TMb ■ T E R M E T A L L HAL115 Marking Code Hall Effect Sensor 1C in CMOS technology Temperati.ire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA

ITT ccu 3000 i

Contextual Info: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.

IMBT3904

Abstract: ITT INTERMETALL
Contextual Info: ITT SEIIICON] / INTERHETALL SGE J> • 4bfi2711 0002564 741 M I S I IMBT3903, IMBT3904 'T '’?A' ' 5 NPN Silicon Epitaxial Planar Transistors « for switching and amplifier applications. TE A s complementary types the PN P transistors IMBT3905 and IMBT3906 are recommended.

041 itt diode

Abstract: 129 ITT itt SD101 ITT DIODE 041 LL101A ITT DIODE 129 ITT diode LL101 LL101B LL101C
Contextual Info: ITT SEMICOND/ INTERMETALL blE D • Hbfl2711 OGOBIT? bb3 « I S I LL101A. . . LL101C Silicon Schottky Barrier Diodes for general purpose applications Cathode Mark 3.5 401 / u - The LL101 Series is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward

ITT DIODE

Abstract: diode ITT itt diodes ITT DIODE 125 intermetall BB723 DDG3163
Contextual Info: ITT SEMICOND/ INTERMETALL blE D • Mbfi2711 DDG3163 07=5 WËISI BB723 Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation for tuning the VHF range 170 to 303 MHz and the hyperband range 303 to 463 MHz without switching.

ZY1S

Abstract: 58A2 ZY 20 DIODE ZY13 diode zy 245 zener ZY10 zener diode 278 ZY12 ZY16
Contextual Info: ZY1. . ZY200, ZY1S. . ZY200S Silicon Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Samller voltage tolerance on request. The diodes in plastic case DO-41 are designated by suf­

Transistor BC 227

Contextual Info: ML.Ö5711 DDObñBD T 3 3 VPX 3225D, VPX 3224D PRELIMINARY DATA SHEET Contents Page Section Title 5 5 1. 1.1. Introduction System Architecture 9 9 9 10 10 10 11 11 12 12 13 14 15 16 16 16 17 17 17 18 20 20 20 21 21 22 24 24 24 24 24 26 27 28 28 29 29 2. 2.1.

itt ol 170

Contextual Info: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch

ITT 10.7 MHz crystal filter

Contextual Info: 4b ñH 71 1 Q G G 5 ô ê 4 Ibb CAP 3001 A Contents Page Section Title 4 1. Introduction 4 1.1. Features 4 2. Functional Description 4 4 2.1. 2.1.1. 2.1.2. Architecture DSP Block 2.1.3. 2.1.4. Analog Part Operating Modes 2.1.5. 2.1.6. 2.1.7. Analog Input Systems

Contextual Info: ADVANCE INFORMATION DAC 3550A Stereo Audio DAC 4 - M IC R O N AS Edition Aug. 14, 1998 6251-467-1 Al INTERMETALL 4bßH711 GDD7bbb lb3 DAC 3550A ADVANCE INFORMATION Contents Page Section Title 3 3 1. 1.1. Introduction Main Features 5 5 6 6 6 6 6 6 7 7 8 9 9

Contextual Info: PRELIMINARY DATA SHEET MSP 341 OD Multistandard Sound Processor < :> M IC R O N A S Edition Jan. 15, 1998 6251-422-3PD INTERMETALL 4bfi2711 0 0 0 ^ 3 4 MO T MSP 341OD PRELIMINARY DATASHEET Contents Page Section Title 5 1. 1.1. Introduction MSP 3410D Additional Features and Major Improvements compared with MSP 3410B

311OA

Contextual Info: S S i S S ’“ IT T IN T E R M E T A L L MbflE?!! O G G b l M O 455 DMI 3110A Contents Page Section Title 4 1. Introduction 4 4 5 5 5 5 5 5 5 5 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 2.9. 2.10. 2.11. 2.12. 2.13. Functional Description Clock Generation

PAL 007E

Abstract: PAL 007e diagrams MSP 3415D MSP 34100 MSP3410D msp3415d micronas msp 34150 3415D NICAM MSP3410B
Contextual Info: % | i. i, si»: sTOm. vix PRELIMINARY DATA SHEET MSP 3415D Multistandard Sound Processor 4 MICRO Edition Jan. 1 5 ,1 9 9 8 6251-438-2P D INTERM ETA LL 4bflE711 0007010 724 MSP 3415D PRELIMINARY DATASHEET Contents Page Section Title 5 5 5 5 1. 1.1. 1.2. 1.3.