00D03S Search Results

silonex NSL

Abstract: SILONEX INC
Contextual Info: SILONEX INC 4?E D Ô255271 00D03S2 0 • SXI SILONEX NSL-40 & NSL-40AA OPTOISOLATORS - w - ?t «I n c

Contextual Info: böE D SINTEK CORP • ÖE74flfl7 00D03S0 33Ö H S I K STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SIIÏITEK FEATURES DESCRIPTION 3 0 ,3 5 ,4 5 and 55ns A c c e s s Tim es 1 5 ,2 0 and 25ns O u tp u t E nable A cce ss

Contextual Info: M S I ELECTRONICS INC IDE I | St,5L4bb 00D03ST 7 | G&1SD ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES electronics m e The abrupt ZC700 and hyperabrupt ZC 800 series tuning diodes together offer a selection o f characteristics that could fit many U H F /V H F applications. Where required the higher

Contextual Info: ADVANCED ELECTRONIC PKS 3=JE D BL 05S47T3 00D03S0 S E3AEP AEPSX2M8 - PRELIMINARY STATIC RAM MODULE - ' ~— - - . ~i -2 3 -/y 2 MEGWORD BY 8 BIT HIGH SPEED SRAM MODULE WITH ON BOARD DECODERS SPECIFICATION DRAWING FRO NT AND SID E VIEW S CSHOWING V E R T IC A L MOUNTING LEADS O P T IO N }

2S3280

Abstract: BZX 55 C 5V 8 Zener c9v S7-300 bzx550 BZX55 BZX55C c6v6 22s256 Crimson Semiconductor
Contextual Info: CRinSON SE MIC OND UCTOR INC 1 TT Ì>[F| E 5 1 4 EHb 00D03SA 1 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC : 99D 0 0 3 5 8 D T"-//" ZENER DIODES Z e n e M X o d « « with Py — 500 mW Typ# Izr tot V BZX S 5 / C 2 V 4 N o tM a n de aM Etoctffcal characteristic«

Contextual Info: Standard Product February, 1994 LXT304A Low -Pow er T1/E1 Integrated Short H aul Transceiver with Receive Jitter Attenuation Features The LXT304A is a fully integrated low-power transceiver for both North American 1.544 MHz Tl , and European 2.048 MHz (E l) applications. It features a constant low

Contextual Info: MOSAIC S E M I C O N D U C T O R INC 40E D £3 0000323 b M O C T -V C -tt-H 5 i 2 K X 8 SRAM MS8512FK-85/10/12/15 Issue 1.2 : July 1991 Mosaic Semiconductor ADVANCE PRODUCT INFORMATION In c 524,288 x 8 CMOS High Speed Static RAM Features Access Times of 85/100/120/150 ns

J16-18A-R01M-HS

Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
Contextual Info: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a­