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    0118J Search Results

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    Amphenol PCD ALBFLB3E180118J

    FLUOROSILICONE FAIRLEAD BLOCK
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    DigiKey ALBFLB3E180118J Bulk 50
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    Newark ALBFLB3E180118J Bulk 50
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    Interstate Connecting Components ALBFLB3E180118J
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    Amphenol Corporation ALBFLB3E180118J

    ALBFLB3E180118J - Bulk (Alt: ALBFLB3E180118J)
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    Avnet Americas ALBFLB3E180118J Bulk 19 Weeks 50
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    Mouser Electronics ALBFLB3E180118J
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    Daniels Manufacturing Corporation (DMC) C10-118JAPKG

    Cable Mounting & Accessories SAFE-T-CABLE .022X18" KIT/w JUMPER ASSBY
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    Mouser Electronics C10-118JAPKG
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    PEI Genesis C10-118JAPKG
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    Daniels Manufacturing Corporation (DMC) C10-118JA

    Cable Mounting & Accessories SAFE-T-CABLE KIT .022X18" /W JUMPER ASSY
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    Mouser Electronics C10-118JA
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    Daniels Manufacturing Corporation (DMC) A10-118JA

    Cable Mounting & Accessories SAFE-T-CABLE ASSEMBLY .022X18" w/JUMPER
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    Mouser Electronics A10-118JA
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    PEI Genesis A10-118JA
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    0118J Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    OHRD1938

    Contextual Info: GaAs-IR-Lumineszenzdiode 950 nm GaAs Infrared Emitter (950 nm) F 0118J Wesentliche Merkmale Features 2 • • • • • Chip size 300 x 300 µm2 Very highly efficient GaAlAs LED High reliability High pulse handling capability Good spectral match to silicon


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    0118J OHRD1938 PDF

    0118J

    Abstract: osram topled
    Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 22 mW @ 100 mA im Topled Gehäuse. • Chipgröße 300 x 300 µm2


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    0118J 0118J osram topled PDF

    GCOY6878

    Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, Enhanced Power GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118J Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2


    Original
    0118J GCOY6878 PDF